JP4035298B2 - プラズマ処理方法、半導体装置の製造方法および半導体装置 - Google Patents

プラズマ処理方法、半導体装置の製造方法および半導体装置 Download PDF

Info

Publication number
JP4035298B2
JP4035298B2 JP2001218311A JP2001218311A JP4035298B2 JP 4035298 B2 JP4035298 B2 JP 4035298B2 JP 2001218311 A JP2001218311 A JP 2001218311A JP 2001218311 A JP2001218311 A JP 2001218311A JP 4035298 B2 JP4035298 B2 JP 4035298B2
Authority
JP
Japan
Prior art keywords
frequency
layer
power
frequency power
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001218311A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003027246A5 (enExample
JP2003027246A (ja
Inventor
博明 新納
寿康 白砂
誠 青木
仁 村山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001218311A priority Critical patent/JP4035298B2/ja
Priority to US10/195,398 priority patent/US6849123B2/en
Publication of JP2003027246A publication Critical patent/JP2003027246A/ja
Publication of JP2003027246A5 publication Critical patent/JP2003027246A5/ja
Application granted granted Critical
Publication of JP4035298B2 publication Critical patent/JP4035298B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP2001218311A 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置 Expired - Fee Related JP4035298B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001218311A JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置
US10/195,398 US6849123B2 (en) 2001-07-18 2002-07-16 Plasma processing method and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001218311A JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
JP2003027246A JP2003027246A (ja) 2003-01-29
JP2003027246A5 JP2003027246A5 (enExample) 2007-01-11
JP4035298B2 true JP4035298B2 (ja) 2008-01-16

Family

ID=19052505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001218311A Expired - Fee Related JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置

Country Status (2)

Country Link
US (1) US6849123B2 (enExample)
JP (1) JP4035298B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1321963B1 (en) * 2001-12-20 2007-04-18 Canon Kabushiki Kaisha Plasma processing method and plasma processing apparatus
US6925616B2 (en) * 2002-10-04 2005-08-02 Sun Microsystems, Inc. Method to test power distribution system
WO2004033753A1 (ja) * 2002-10-09 2004-04-22 Toyo Seikan Kaisha,Ltd. 金属酸化膜の形成方法及び該方法に用いるマイクロ波電源装置
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
US7410593B2 (en) * 2006-02-22 2008-08-12 Macronix International Co., Ltd. Plasma etching methods using nitrogen memory species for sustaining glow discharge
DE102006032568A1 (de) * 2006-07-12 2008-01-17 Stein, Ralf Verfahren zur plasmagestützten chemischen Gasphasenabscheidung an der Innenwand eines Hohlkörpers
JP4909090B2 (ja) 2007-01-09 2012-04-04 株式会社 日立ディスプレイズ 照明装置及びこれを備えた表示装置
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
US8574577B2 (en) * 2008-01-03 2013-11-05 The Scripps Research Institute VEGF antibodies comprising modular recognition domains
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US10840082B2 (en) * 2018-08-09 2020-11-17 Lam Research Corporation Method to clean SnO2 film from chamber
WO2021250499A1 (en) * 2020-06-08 2021-12-16 Okinawa Institute Of Science And Technology School Corporation Rapid hybrid chemical vapor deposition for perovskite solar modules
KR20220012474A (ko) * 2020-07-22 2022-02-04 주식회사 원익아이피에스 박막 증착 방법 및 이를 이용한 반도체 소자의 제조방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3480573D1 (en) 1984-01-06 1989-12-28 Tegal Corp Single electrode, multiple frequency plasma apparatus
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS62188783A (ja) * 1986-02-14 1987-08-18 Sanyo Electric Co Ltd 静電潜像担持体の製造方法
US5569502A (en) * 1992-09-11 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and method for forming a film
JP3236111B2 (ja) * 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
JP3339597B2 (ja) 1993-09-03 2002-10-28 アネルバ株式会社 プラズマ処理方法およびプラズマ処理装置
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JPH07130719A (ja) 1993-11-05 1995-05-19 Tokyo Electron Ltd プラズマ処理装置
EP0653501B1 (en) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
JPH0897199A (ja) * 1994-09-22 1996-04-12 Toshiba Corp 絶縁膜の形成方法
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
TW312815B (enExample) * 1995-12-15 1997-08-11 Hitachi Ltd
US6065425A (en) * 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
JP3267174B2 (ja) 1996-03-29 2002-03-18 株式会社日立製作所 プラズマ処理装置
US6001521A (en) * 1997-10-29 1999-12-14 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US20020056415A1 (en) * 1999-01-29 2002-05-16 Sharp Kabushiki Kaisha Apparatus and method for production of solar cells
US6703265B2 (en) * 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6599818B2 (en) * 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP3637291B2 (ja) * 2001-05-01 2005-04-13 三菱重工業株式会社 プラズマ化学蒸着装置における高周波プラズマの大面積均一化方法及び装置
JP2003027238A (ja) * 2001-07-09 2003-01-29 Canon Inc 堆積膜形成方法

Also Published As

Publication number Publication date
US6849123B2 (en) 2005-02-01
US20030143821A1 (en) 2003-07-31
JP2003027246A (ja) 2003-01-29

Similar Documents

Publication Publication Date Title
JP3897582B2 (ja) 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP4035298B2 (ja) プラズマ処理方法、半導体装置の製造方法および半導体装置
JP3368109B2 (ja) 電子写真用光受容部材
JP4562163B2 (ja) 電子写真感光体の製造方法及び電子写真感光体
JP2003337437A (ja) 負帯電用電子写真感光体およびそれを用いた電子写真装置
JP3181165B2 (ja) 光受容部材
US5945241A (en) Light receiving member for electrophotography and fabrication process thereof
JPH1090929A (ja) 電子写真用光受容部材
JP4235593B2 (ja) 電子写真用光受容部材
JP3606395B2 (ja) 電子写真用光受容部材
JP3710171B2 (ja) 電子写真感光体の形成方法
JP3459700B2 (ja) 光受容部材および光受容部材の製造方法
JP2000171995A (ja) 電子写真用光受容部材
JP2003313668A (ja) 半導体装置の製造方法
JP3320228B2 (ja) 電子写真用光受容部材の製造方法
JP2000252220A (ja) 堆積膜形成装置及び堆積膜形成方法
JP3412957B2 (ja) 光受容部材の製造方法
JP2002236379A (ja) 電子写真用光受容部材およびそれを用いた電子写真装置
JP3323681B2 (ja) 電子写真感光体の製造方法
JP3658100B2 (ja) 非晶質シリコン系感光体製造装置および製造方法
JP2001330971A (ja) 光受容部材の製造方法
JP2003107765A (ja) 電子写真感光体及び電子写真感光体の作製方法
JP2003107768A (ja) 負帯電用電子写真感光体
JP2002311614A (ja) 電子写真用光受容部材
JPH1184700A (ja) 電子写真用光受容部材

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040610

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20040610

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070606

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070723

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20071003

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071029

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101102

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101102

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111102

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121102

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131102

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees