JP2003027246A5 - - Google Patents

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Publication number
JP2003027246A5
JP2003027246A5 JP2001218311A JP2001218311A JP2003027246A5 JP 2003027246 A5 JP2003027246 A5 JP 2003027246A5 JP 2001218311 A JP2001218311 A JP 2001218311A JP 2001218311 A JP2001218311 A JP 2001218311A JP 2003027246 A5 JP2003027246 A5 JP 2003027246A5
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JP
Japan
Prior art keywords
frequency
reaction vessel
frequency power
plasma
processing
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Application number
JP2001218311A
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English (en)
Japanese (ja)
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JP4035298B2 (ja
JP2003027246A (ja
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Priority to JP2001218311A priority Critical patent/JP4035298B2/ja
Priority claimed from JP2001218311A external-priority patent/JP4035298B2/ja
Priority to US10/195,398 priority patent/US6849123B2/en
Publication of JP2003027246A publication Critical patent/JP2003027246A/ja
Publication of JP2003027246A5 publication Critical patent/JP2003027246A5/ja
Application granted granted Critical
Publication of JP4035298B2 publication Critical patent/JP4035298B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001218311A 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置 Expired - Fee Related JP4035298B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001218311A JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置
US10/195,398 US6849123B2 (en) 2001-07-18 2002-07-16 Plasma processing method and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001218311A JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
JP2003027246A JP2003027246A (ja) 2003-01-29
JP2003027246A5 true JP2003027246A5 (enExample) 2007-01-11
JP4035298B2 JP4035298B2 (ja) 2008-01-16

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Family Applications (1)

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JP2001218311A Expired - Fee Related JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置

Country Status (2)

Country Link
US (1) US6849123B2 (enExample)
JP (1) JP4035298B2 (enExample)

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US6925616B2 (en) * 2002-10-04 2005-08-02 Sun Microsystems, Inc. Method to test power distribution system
WO2004033753A1 (ja) * 2002-10-09 2004-04-22 Toyo Seikan Kaisha,Ltd. 金属酸化膜の形成方法及び該方法に用いるマイクロ波電源装置
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
US7410593B2 (en) * 2006-02-22 2008-08-12 Macronix International Co., Ltd. Plasma etching methods using nitrogen memory species for sustaining glow discharge
DE102006032568A1 (de) * 2006-07-12 2008-01-17 Stein, Ralf Verfahren zur plasmagestützten chemischen Gasphasenabscheidung an der Innenwand eines Hohlkörpers
JP4909090B2 (ja) 2007-01-09 2012-04-04 株式会社 日立ディスプレイズ 照明装置及びこれを備えた表示装置
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
US8574577B2 (en) * 2008-01-03 2013-11-05 The Scripps Research Institute VEGF antibodies comprising modular recognition domains
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US10840082B2 (en) * 2018-08-09 2020-11-17 Lam Research Corporation Method to clean SnO2 film from chamber
WO2021250499A1 (en) * 2020-06-08 2021-12-16 Okinawa Institute Of Science And Technology School Corporation Rapid hybrid chemical vapor deposition for perovskite solar modules
KR20220012474A (ko) * 2020-07-22 2022-02-04 주식회사 원익아이피에스 박막 증착 방법 및 이를 이용한 반도체 소자의 제조방법

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JPS62188783A (ja) * 1986-02-14 1987-08-18 Sanyo Electric Co Ltd 静電潜像担持体の製造方法
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