JP4029183B2 - 投影露光装置及び投影露光方法 - Google Patents

投影露光装置及び投影露光方法 Download PDF

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Publication number
JP4029183B2
JP4029183B2 JP34374097A JP34374097A JP4029183B2 JP 4029183 B2 JP4029183 B2 JP 4029183B2 JP 34374097 A JP34374097 A JP 34374097A JP 34374097 A JP34374097 A JP 34374097A JP 4029183 B2 JP4029183 B2 JP 4029183B2
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stage
substrate
axis
alignment
projection
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JPH10214783A5 (enExample
JPH10214783A (ja
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健爾 西
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP34374097A 1996-11-28 1997-11-28 投影露光装置及び投影露光方法 Expired - Lifetime JP4029183B2 (ja)

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JP34374097A JP4029183B2 (ja) 1996-11-28 1997-11-28 投影露光装置及び投影露光方法

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Application Number Priority Date Filing Date Title
JP33284396 1996-11-28
JP8-332843 1996-11-28
JP34374097A JP4029183B2 (ja) 1996-11-28 1997-11-28 投影露光装置及び投影露光方法

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JPH10214783A JPH10214783A (ja) 1998-08-11
JPH10214783A5 JPH10214783A5 (enExample) 2005-08-11
JP4029183B2 true JP4029183B2 (ja) 2008-01-09

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