JP3999138B2 - 半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法 - Google Patents

半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法 Download PDF

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JP3999138B2
JP3999138B2 JP2003029697A JP2003029697A JP3999138B2 JP 3999138 B2 JP3999138 B2 JP 3999138B2 JP 2003029697 A JP2003029697 A JP 2003029697A JP 2003029697 A JP2003029697 A JP 2003029697A JP 3999138 B2 JP3999138 B2 JP 3999138B2
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film
substrate
semiconductor
semiconductor film
semiconductor device
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JP2003289046A (ja
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光敏 宮坂
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Seiko Epson Corp
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
JP2003029697A 1995-12-14 2003-02-06 半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法 Expired - Fee Related JP3999138B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WO95/02568 1995-12-14
PCT/JP1995/002568 WO1997022141A1 (en) 1995-12-14 1995-12-14 Method of manufacturing thin film semiconductor device, and thin film semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9-505012A Division JPWO1997022142A1 (ja) 1995-12-14 1996-08-07 薄膜半導体装置、薄膜半導体装置の製造方法、液晶表示装置、液晶表示装置の製造方法、電子機器、電子機器の製造方法、及び薄膜堆積方法

Publications (2)

Publication Number Publication Date
JP2003289046A JP2003289046A (ja) 2003-10-10
JP3999138B2 true JP3999138B2 (ja) 2007-10-31

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JP2003029697A Expired - Fee Related JP3999138B2 (ja) 1995-12-14 2003-02-06 半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法

Country Status (6)

Country Link
EP (1) EP0810640A4 (enExample)
JP (1) JP3999138B2 (enExample)
KR (1) KR100274494B1 (enExample)
CN (2) CN1235269C (enExample)
TW (1) TW316999B (enExample)
WO (2) WO1997022141A1 (enExample)

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JP3350433B2 (ja) 1998-02-16 2002-11-25 シャープ株式会社 プラズマ処理装置
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US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
JP2004061751A (ja) * 2002-07-26 2004-02-26 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
KR100512960B1 (ko) * 2002-09-26 2005-09-07 삼성전자주식회사 플렉서블 ｍｅｍｓ 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 ｍｅｍｓ 무선 마이크로폰
JP4986415B2 (ja) * 2004-06-14 2012-07-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5122818B2 (ja) * 2004-09-17 2013-01-16 シャープ株式会社 薄膜半導体装置の製造方法
WO2007000469A1 (en) * 2005-06-29 2007-01-04 Oc Oerlikon Balzers Ag Method for manufacturing flat substrates
WO2007030941A1 (en) 2005-09-14 2007-03-22 Mattson Technology Canada, Inc. Repeatable heat-treating methods and apparatus
JP5004160B2 (ja) * 2006-12-12 2012-08-22 株式会社日本製鋼所 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
JP2010525581A (ja) 2007-05-01 2010-07-22 マトソン テクノロジー カナダ インコーポレイテッド 照射パルス熱処理方法および装置
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JP5321022B2 (ja) * 2008-12-04 2013-10-23 ソニー株式会社 半導体装置の製造方法および半導体装置
KR20110104982A (ko) * 2009-01-09 2011-09-23 가부시키가이샤 아루박 플라즈마 처리 장치 및 플라즈마 ｃｖｄ 성막 방법
CN102099895B (zh) * 2009-03-05 2016-10-12 株式会社日本制钢所 结晶膜的制造方法及结晶膜制造装置
US9279727B2 (en) 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
CN102061456B (zh) * 2010-10-29 2012-08-22 华南理工大学 一种用于pecvd装置的悬臂式推拉舟系统
KR101912888B1 (ko) * 2011-10-07 2018-12-28 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
JP2016070900A (ja) * 2014-10-02 2016-05-09 セイコーエプソン株式会社 磁気計測装置の製造方法、ガスセルの製造方法、磁気計測装置、およびガスセル
JP6960344B2 (ja) * 2018-01-26 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

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Also Published As

Publication number Publication date
KR100274494B1 (ko) 2001-01-15
WO1997022142A1 (en) 1997-06-19
CN1173948A (zh) 1998-02-18
CN1097300C (zh) 2002-12-25
CN1235269C (zh) 2006-01-04
WO1997022141A1 (en) 1997-06-19
TW316999B (enExample) 1997-10-01
KR970706616A (ko) 1997-11-03
JP2003289046A (ja) 2003-10-10
EP0810640A4 (en) 1999-06-16
EP0810640A1 (en) 1997-12-03
CN1434483A (zh) 2003-08-06

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