JP3954302B2 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
JP3954302B2
JP3954302B2 JP2000371939A JP2000371939A JP3954302B2 JP 3954302 B2 JP3954302 B2 JP 3954302B2 JP 2000371939 A JP2000371939 A JP 2000371939A JP 2000371939 A JP2000371939 A JP 2000371939A JP 3954302 B2 JP3954302 B2 JP 3954302B2
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JP
Japan
Prior art keywords
circuit
read
fuse
group
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000371939A
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English (en)
Japanese (ja)
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JP2002175696A (ja
JP2002175696A5 (enExample
Inventor
幹彦 伊東
勝 小柳
毅彦 原
覚 高瀬
木村　　亨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000371939A priority Critical patent/JP3954302B2/ja
Priority to US10/007,148 priority patent/US6577551B2/en
Publication of JP2002175696A publication Critical patent/JP2002175696A/ja
Publication of JP2002175696A5 publication Critical patent/JP2002175696A5/ja
Application granted granted Critical
Publication of JP3954302B2 publication Critical patent/JP3954302B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Logic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
JP2000371939A 2000-12-06 2000-12-06 半導体集積回路 Expired - Fee Related JP3954302B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000371939A JP3954302B2 (ja) 2000-12-06 2000-12-06 半導体集積回路
US10/007,148 US6577551B2 (en) 2000-12-06 2001-12-04 Semiconductor integrated circuit having a built-in data storage circuit for nonvolatile storage of control data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000371939A JP3954302B2 (ja) 2000-12-06 2000-12-06 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2002175696A JP2002175696A (ja) 2002-06-21
JP2002175696A5 JP2002175696A5 (enExample) 2005-05-26
JP3954302B2 true JP3954302B2 (ja) 2007-08-08

Family

ID=18841575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000371939A Expired - Fee Related JP3954302B2 (ja) 2000-12-06 2000-12-06 半導体集積回路

Country Status (2)

Country Link
US (1) US6577551B2 (enExample)
JP (1) JP3954302B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002269999A (ja) * 2001-03-13 2002-09-20 Toshiba Corp 半導体記憶装置
JP4790925B2 (ja) * 2001-03-30 2011-10-12 富士通セミコンダクター株式会社 アドレス発生回路
KR100420125B1 (ko) * 2002-02-02 2004-03-02 삼성전자주식회사 비휘발성 반도체 메모리 장치와 그것의 파워-업 독출 방법
DE10217710C1 (de) * 2002-04-20 2003-11-20 Infineon Technologies Ag Halbleiterschaltung mit Fuses und Ausleseverfahren für Fuses
US6667189B1 (en) * 2002-09-13 2003-12-23 Institute Of Microelectronics High performance silicon condenser microphone with perforated single crystal silicon backplate
JP4169592B2 (ja) * 2002-12-19 2008-10-22 株式会社ＮＳＣｏｒｅ Ｃｍｉｓ型半導体不揮発記憶回路
JP4138521B2 (ja) * 2003-02-13 2008-08-27 富士通株式会社 半導体装置
KR101106836B1 (ko) * 2003-11-12 2012-01-19 엔엑스피 비 브이 전자 회로 및 데이터 요소 프로세싱 방법
JP2006059969A (ja) * 2004-08-19 2006-03-02 Sony Corp 半導体装置
JP4880999B2 (ja) * 2005-12-28 2012-02-22 株式会社東芝 半導体集積回路およびその検査方法
JP5101044B2 (ja) * 2006-06-06 2012-12-19 日置電機株式会社 測定装置
JP5099674B2 (ja) * 2006-12-25 2012-12-19 三星電子株式会社 半導体集積回路
US7667506B2 (en) * 2007-03-29 2010-02-23 Mitutoyo Corporation Customizable power-on reset circuit based on critical circuit counterparts
JP2009099156A (ja) * 2007-10-12 2009-05-07 Elpida Memory Inc フューズラッチ回路及びフューズラッチ方法
JP4558033B2 (ja) * 2007-12-10 2010-10-06 株式会社東芝 不揮発性半導体記憶装置
KR100930411B1 (ko) * 2008-04-10 2009-12-08 주식회사 하이닉스반도체 퓨즈 정보 제어 장치, 이를 이용한 반도체 집적회로 및그의 퓨즈 정보 제어 방법
JP2011124683A (ja) * 2009-12-09 2011-06-23 Toshiba Corp 出力バッファ回路、入力バッファ回路、及び入出力バッファ回路
JP2011124689A (ja) * 2009-12-09 2011-06-23 Toshiba Corp バッファ回路
KR101901664B1 (ko) * 2012-04-02 2018-10-01 삼성전자주식회사 멀티 리딩 모드를 갖는 퓨즈 데이터 리딩 회로
JP2014078313A (ja) * 2013-12-26 2014-05-01 Ps4 Luxco S A R L 半導体装置
CN105139891B (zh) * 2015-09-11 2023-04-18 四川易冲科技有限公司 一种用于校准模拟集成电路的方法及装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5999463A (en) * 1997-07-21 1999-12-07 Samsung Electronics Co., Ltd. Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks
JP3730381B2 (ja) 1997-10-21 2006-01-05 株式会社東芝 半導体記憶装置
JPH11238394A (ja) * 1997-12-18 1999-08-31 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
US6577551B2 (en) 2003-06-10
JP2002175696A (ja) 2002-06-21
US20020067633A1 (en) 2002-06-06

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