JP3919398B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP3919398B2
JP3919398B2 JP30532799A JP30532799A JP3919398B2 JP 3919398 B2 JP3919398 B2 JP 3919398B2 JP 30532799 A JP30532799 A JP 30532799A JP 30532799 A JP30532799 A JP 30532799A JP 3919398 B2 JP3919398 B2 JP 3919398B2
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JP
Japan
Prior art keywords
semiconductor module
external heat
insulating substrate
conductive pattern
heat sink
Prior art date
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Expired - Lifetime
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JP30532799A
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English (en)
Japanese (ja)
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JP2001127238A (ja
JP2001127238A5 (enExample
Inventor
利彰 篠原
晃 藤田
貴信 吉田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP30532799A priority Critical patent/JP3919398B2/ja
Priority to US09/534,043 priority patent/US6787900B2/en
Publication of JP2001127238A publication Critical patent/JP2001127238A/ja
Publication of JP2001127238A5 publication Critical patent/JP2001127238A5/ja
Application granted granted Critical
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    • H10W70/68—
    • H10W40/255—
    • H10W74/114—
    • H10W72/075—
    • H10W72/5524—
    • H10W72/884—
    • H10W72/951—
    • H10W74/00—
    • H10W90/00—
    • H10W90/753—

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP30532799A 1999-10-27 1999-10-27 半導体モジュール Expired - Lifetime JP3919398B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP30532799A JP3919398B2 (ja) 1999-10-27 1999-10-27 半導体モジュール
US09/534,043 US6787900B2 (en) 1999-10-27 2000-03-24 Semiconductor module and insulating substrate thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30532799A JP3919398B2 (ja) 1999-10-27 1999-10-27 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2001127238A JP2001127238A (ja) 2001-05-11
JP2001127238A5 JP2001127238A5 (enExample) 2005-08-04
JP3919398B2 true JP3919398B2 (ja) 2007-05-23

Family

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Family Applications (1)

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JP30532799A Expired - Lifetime JP3919398B2 (ja) 1999-10-27 1999-10-27 半導体モジュール

Country Status (2)

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US (1) US6787900B2 (enExample)
JP (1) JP3919398B2 (enExample)

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JP4057407B2 (ja) * 2002-12-12 2008-03-05 三菱電機株式会社 半導体パワーモジュール
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CN1331217C (zh) * 2003-11-10 2007-08-08 乾坤科技股份有限公司 晶片封装结构及其基板
DE10361696B4 (de) * 2003-12-30 2016-03-10 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten Halbleiterschaltungsanordnung
JP4715283B2 (ja) * 2005-04-25 2011-07-06 日産自動車株式会社 電力変換装置及びその製造方法
US7508067B2 (en) * 2005-10-13 2009-03-24 Denso Corporation Semiconductor insulation structure
US8174114B2 (en) * 2005-12-15 2012-05-08 Taiwan Semiconductor Manufacturing Go. Ltd. Semiconductor package structure with constraint stiffener for cleaning and underfilling efficiency
US8829661B2 (en) * 2006-03-10 2014-09-09 Freescale Semiconductor, Inc. Warp compensated package and method
JP4967447B2 (ja) * 2006-05-17 2012-07-04 株式会社日立製作所 パワー半導体モジュール
US7994635B2 (en) * 2007-05-18 2011-08-09 Sansha Electric Manufacturing Co., Ltd. Power semiconductor module
JP5061717B2 (ja) * 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
US8223496B2 (en) * 2007-05-18 2012-07-17 Sansha Electric Manufacturing Co., Ltd. Arc discharge device
DE102008009510B3 (de) * 2008-02-15 2009-07-16 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
TW201011869A (en) * 2008-09-10 2010-03-16 Cyntec Co Ltd Chip package structure
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
DE102009002993B4 (de) * 2009-05-11 2012-10-04 Infineon Technologies Ag Leistungshalbleitermodul mit beabstandeten Schaltungsträgern
DE102009026558B3 (de) * 2009-05-28 2010-12-02 Infineon Technologies Ag Leistungshalbleitermodul mit beweglich gelagerten Schaltungsträgern und Verfahren zur Herstellung eines solchen Leistungshalbleitermoduls
US8314487B2 (en) * 2009-12-18 2012-11-20 Infineon Technologies Ag Flange for semiconductor die
WO2012108073A1 (ja) 2011-02-08 2012-08-16 富士電機株式会社 半導体モジュール用放熱板の製造方法、その放熱板およびその放熱板を用いた半導体モジュール
JP5737080B2 (ja) * 2011-08-31 2015-06-17 サンケン電気株式会社 半導体装置およびその製造方法
JP5716637B2 (ja) * 2011-11-04 2015-05-13 住友電気工業株式会社 半導体モジュール及び半導体モジュールの製造方法
CN104471704B (zh) 2012-07-13 2017-05-17 三菱电机株式会社 半导体装置
WO2014041936A1 (ja) * 2012-09-13 2014-03-20 富士電機株式会社 半導体装置、半導体装置に対する放熱部材の取り付け方法及び半導体装置の製造方法
KR20150060036A (ko) * 2013-11-25 2015-06-03 삼성전기주식회사 전력 반도체 모듈 및 그 제조 방법
US9620877B2 (en) 2014-06-17 2017-04-11 Semiconductor Components Industries, Llc Flexible press fit pins for semiconductor packages and related methods
JP6356550B2 (ja) * 2014-09-10 2018-07-11 三菱電機株式会社 半導体装置およびその製造方法
US9431311B1 (en) 2015-02-19 2016-08-30 Semiconductor Components Industries, Llc Semiconductor package with elastic coupler and related methods
JP6515694B2 (ja) * 2015-06-12 2019-05-22 富士電機株式会社 半導体装置
JP6485257B2 (ja) * 2015-07-01 2019-03-20 富士電機株式会社 半導体装置及び半導体装置の製造方法
DE102015115122B4 (de) * 2015-09-09 2022-05-19 Infineon Technologies Ag Leistungshalbleitermodul mit zweiteiligem Gehäuse
JP6065089B2 (ja) * 2015-11-05 2017-01-25 住友電気工業株式会社 半導体モジュール
EP4621842A3 (en) 2016-07-14 2025-12-24 Kabushiki Kaisha Toshiba, Inc. Ceramic circuit board and semiconductor module
WO2018146933A1 (ja) * 2017-02-13 2018-08-16 富士電機株式会社 半導体装置及び半導体装置の製造方法
US11587856B2 (en) * 2017-03-15 2023-02-21 Abb Schweiz Ag Solid state switching device
JP6972622B2 (ja) * 2017-04-03 2021-11-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7014012B2 (ja) * 2018-03-30 2022-02-01 三菱電機株式会社 半導体装置、半導体装置の製造方法および電力変換装置
JP6906654B2 (ja) * 2018-06-05 2021-07-21 三菱電機株式会社 半導体装置およびその製造方法
JP2018133598A (ja) * 2018-06-05 2018-08-23 三菱電機株式会社 半導体装置およびその製造方法
JP7045978B2 (ja) * 2018-12-07 2022-04-01 三菱電機株式会社 半導体装置および電力変換装置
JP7193730B2 (ja) 2019-03-26 2022-12-21 三菱電機株式会社 半導体装置
EP3872854A1 (en) * 2020-02-27 2021-09-01 Littelfuse, Inc. Power module housing with improved protrusion design
CN112420636B (zh) * 2020-11-19 2022-09-06 四川长虹空调有限公司 芯片散热结构
JP7790024B2 (ja) * 2021-03-01 2025-12-23 富士電機株式会社 半導体装置及び半導体装置の製造方法
EP4432345B1 (en) * 2023-03-16 2025-05-07 Hitachi Energy Ltd Insulated metal substrate and method for producing an insulated metal substrate

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JPH077810B2 (ja) * 1986-06-06 1995-01-30 株式会社日立製作所 半導体装置
US4758927A (en) * 1987-01-21 1988-07-19 Tektronix, Inc. Method of mounting a substrate structure to a circuit board
JP3081326B2 (ja) * 1991-12-04 2000-08-28 株式会社日立製作所 半導体モジュール装置
JPH0653277A (ja) * 1992-06-04 1994-02-25 Lsi Logic Corp 半導体装置アセンブリおよびその組立方法
DE4233073A1 (de) * 1992-10-01 1994-04-07 Siemens Ag Verfahren zum Herstellen eines Halbleiter-Modulaufbaus
JP2912526B2 (ja) * 1993-07-05 1999-06-28 三菱電機株式会社 半導体パワーモジュールおよび複合基板
EP0805492B1 (de) * 1996-04-03 2004-06-30 Jürgen Dr.-Ing. Schulz-Harder Gewölbtes Metall-Keramik-Substrat
US6011304A (en) * 1997-05-05 2000-01-04 Lsi Logic Corporation Stiffener ring attachment with holes and removable snap-in heat sink or heat spreader/lid
DE19726534A1 (de) * 1997-06-23 1998-12-24 Asea Brown Boveri Leistungshalbleitermodul mit geschlossenen Submodulen
KR19990068199A (ko) * 1998-01-30 1999-08-25 모기 쥰이찌 프레임 형상의 몰드부를 갖는 반도체 장치용 패키지 및 그 제조 방법
JPH11330283A (ja) * 1998-05-15 1999-11-30 Toshiba Corp 半導体モジュール及び大型半導体モジュール
JP2000082774A (ja) * 1998-06-30 2000-03-21 Sumitomo Electric Ind Ltd パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル
JP3864282B2 (ja) * 1998-09-22 2006-12-27 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法並びにこの基板を用いた半導体装置

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Publication number Publication date
US6787900B2 (en) 2004-09-07
JP2001127238A (ja) 2001-05-11
US20030094682A1 (en) 2003-05-22

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