JP3888374B2 - ＧａＮ単結晶基板の製造方法 - Google Patents

ＧａＮ単結晶基板の製造方法 Download PDF

Info

Publication number
JP3888374B2
JP3888374B2 JP2004276337A JP2004276337A JP3888374B2 JP 3888374 B2 JP3888374 B2 JP 3888374B2 JP 2004276337 A JP2004276337 A JP 2004276337A JP 2004276337 A JP2004276337 A JP 2004276337A JP 3888374 B2 JP3888374 B2 JP 3888374B2
Authority
JP
Japan
Prior art keywords
gan
substrate
angle
gaas
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004276337A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005298319A (ja
JP2005298319A5 (enExample
Inventor
仁 笠井
健作 元木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2004276337A priority Critical patent/JP3888374B2/ja
Priority to TW094105270A priority patent/TW200532776A/zh
Priority to EP05251462A priority patent/EP1577933A3/en
Priority to CNA2005100563144A priority patent/CN1670918A/zh
Priority to US10/907,033 priority patent/US20050208687A1/en
Priority to KR1020050022331A priority patent/KR20060043770A/ko
Publication of JP2005298319A publication Critical patent/JP2005298319A/ja
Publication of JP2005298319A5 publication Critical patent/JP2005298319A5/ja
Application granted granted Critical
Publication of JP3888374B2 publication Critical patent/JP3888374B2/ja
Priority to US12/121,806 priority patent/US20080219910A1/en
Priority to KR1020110069032A priority patent/KR20110088483A/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B47/00—Operating or controlling locks or other fastening devices by electric or magnetic means
    • E05B47/02—Movement of the bolt by electromagnetic means; Adaptation of locks, latches, or parts thereof, for movement of the bolt by electromagnetic means
    • E05B47/026—Movement of the bolt by electromagnetic means; Adaptation of locks, latches, or parts thereof, for movement of the bolt by electromagnetic means the bolt moving rectilinearly
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B17/00—Accessories in connection with locks
    • E05B17/20—Means independent of the locking mechanism for preventing unauthorised opening, e.g. for securing the bolt in the fastening position
    • E05B17/2084—Means to prevent forced opening by attack, tampering or jimmying

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004276337A 2004-03-17 2004-09-24 ＧａＮ単結晶基板の製造方法 Expired - Fee Related JP3888374B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004276337A JP3888374B2 (ja) 2004-03-17 2004-09-24 ＧａＮ単結晶基板の製造方法
TW094105270A TW200532776A (en) 2004-03-17 2005-02-22 Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate
EP05251462A EP1577933A3 (en) 2004-03-17 2005-03-10 Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate
CNA2005100563144A CN1670918A (zh) 2004-03-17 2005-03-16 制备单晶GaN衬底的方法及单晶GaN衬底
US10/907,033 US20050208687A1 (en) 2004-03-17 2005-03-17 Method of Manufacturing Single-Crystal GaN Substrate, and Single-Crystal GaN Substrate
KR1020050022331A KR20060043770A (ko) 2004-03-17 2005-03-17 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판
US12/121,806 US20080219910A1 (en) 2004-03-17 2008-05-16 Single-Crystal GaN Substrate
KR1020110069032A KR20110088483A (ko) 2004-03-17 2011-07-12 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004075674 2004-03-17
JP2004276337A JP3888374B2 (ja) 2004-03-17 2004-09-24 ＧａＮ単結晶基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006137114A Division JP2006306722A (ja) 2004-03-17 2006-05-17 ＧａＮ単結晶基板の製造方法及びＧａＮ単結晶基板

Publications (3)

Publication Number Publication Date
JP2005298319A JP2005298319A (ja) 2005-10-27
JP2005298319A5 JP2005298319A5 (enExample) 2006-04-13
JP3888374B2 true JP3888374B2 (ja) 2007-02-28

Family

ID=34840249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004276337A Expired - Fee Related JP3888374B2 (ja) 2004-03-17 2004-09-24 ＧａＮ単結晶基板の製造方法

Country Status (6)

Country Link
US (2) US20050208687A1 (enExample)
EP (1) EP1577933A3 (enExample)
JP (1) JP3888374B2 (enExample)
KR (2) KR20060043770A (enExample)
CN (1) CN1670918A (enExample)
TW (1) TW200532776A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112022001212T5 (de) 2021-02-25 2024-01-11 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4581490B2 (ja) 2004-05-31 2010-11-17 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
JP4691911B2 (ja) * 2004-06-11 2011-06-01 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
KR100728533B1 (ko) * 2004-11-23 2007-06-15 삼성코닝 주식회사 질화갈륨 단결정 후막 및 이의 제조방법
JP4735949B2 (ja) * 2005-04-08 2011-07-27 日立電線株式会社 Ｉｉｉ−ｖ族窒化物半導体結晶の製造方法およびｉｉｉ−ｖ族窒化物半導体基板の製造方法
DE102005021099A1 (de) * 2005-05-06 2006-12-07 Universität Ulm GaN-Schichten
KR100707166B1 (ko) * 2005-10-12 2007-04-13 삼성코닝 주식회사 ＧａＮ 기판의 제조방법
JP2007119325A (ja) * 2005-10-31 2007-05-17 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその成長方法
KR100695118B1 (ko) * 2005-12-27 2007-03-14 삼성코닝 주식회사 다중-프리스탠딩 ＧａＮ 웨이퍼의 제조방법
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
CN101443488B (zh) * 2006-05-08 2013-03-27 弗赖贝格化合物原料有限公司 制备ⅲ-n体晶和自支撑ⅲ-n衬底的方法以及ⅲ-n体晶和自支撑ⅲ-n衬底
JP4939844B2 (ja) * 2006-06-08 2012-05-30 ローム株式会社 ＺｎＯ系半導体素子
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
JP2008028259A (ja) * 2006-07-24 2008-02-07 Mitsubishi Chemicals Corp 単結晶ＧａＮ基板の製造方法
JP4873467B2 (ja) * 2006-07-27 2012-02-08 独立行政法人産業技術総合研究所 オフ角を有する単結晶基板の製造方法
EP1883103A3 (en) * 2006-07-27 2008-03-05 Interuniversitair Microelektronica Centrum Deposition of group III-nitrides on Ge
EP2092093A4 (en) * 2006-10-25 2017-06-14 The Regents of The University of California Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby
JP5125098B2 (ja) * 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
TWI372796B (en) 2006-12-28 2012-09-21 Saint Gobain Ceramics Sapphire substrates and methods of making same
KR20140131598A (ko) 2006-12-28 2014-11-13 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 사파이어 기판
JP5226695B2 (ja) 2006-12-28 2013-07-03 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド サファイア基板及びその製造方法
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
EP2003230A2 (en) 2007-06-14 2008-12-17 Sumitomo Electric Industries, Ltd. GaN substrate, substrate with an epitaxial layer, semiconductor device, and GaN substrate manufacturing method
JP4952547B2 (ja) * 2007-06-14 2012-06-13 住友電気工業株式会社 ＧａＮ基板、エピタキシャル層付き基板、半導体装置、およびＧａＮ基板の製造方法
EP2003696B1 (en) 2007-06-14 2012-02-29 Sumitomo Electric Industries, Ltd. GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate
JP2010529943A (ja) 2007-06-15 2010-09-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ミスカット基板上に成長したプレーナ無極性ｍ平面ＩＩＩ族窒化物薄膜
US20090039356A1 (en) * 2007-08-08 2009-02-12 The Regents Of The University Of California Planar nonpolar m-plane group iii-nitride films grown on miscut substrates
JP2009057247A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法およびｉｉｉ族窒化物結晶基板
EP2045374A3 (en) 2007-10-05 2011-02-16 Sumitomo Electric Industries, Ltd. Method of manufacturing a GaN substrate and a GaN epitaxial wafer
JP5181885B2 (ja) * 2007-10-05 2013-04-10 住友電気工業株式会社 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
JP2009170798A (ja) * 2008-01-18 2009-07-30 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ
JP2009167066A (ja) * 2008-01-18 2009-07-30 Sumitomo Electric Ind Ltd 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法
JP2011511462A (ja) 2008-02-01 2011-04-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ウエハの軸外カットによる窒化物発光ダイオードの偏光の向上
JP2010118647A (ja) * 2008-10-17 2010-05-27 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、窒化物系半導体発光素子を作製する方法、及び発光装置
JP4730422B2 (ja) 2008-10-24 2011-07-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法、及びｉｉｉ族窒化物半導体エピタキシャルウエハ
JP5120285B2 (ja) * 2009-02-05 2013-01-16 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
KR20120036816A (ko) * 2009-06-01 2012-04-18 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 결정 및 그 제조 방법
US20100309943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
JP5206699B2 (ja) * 2010-01-18 2013-06-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US7933303B2 (en) 2009-06-17 2011-04-26 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
JP5212283B2 (ja) * 2009-07-08 2013-06-19 日立電線株式会社 Ｉｉｉ族窒化物半導体自立基板の製造方法、ｉｉｉ族窒化物半導体自立基板、ｉｉｉ族窒化物半導体デバイスの製造方法及びｉｉｉ族窒化物半導体デバイス
DE102009042349B4 (de) * 2009-09-20 2011-06-16 Otto-Von-Guericke-Universität Magdeburg Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente
JP4513927B1 (ja) 2009-09-30 2010-07-28 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5365454B2 (ja) 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
PL224995B1 (pl) 2010-04-06 2017-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Podłoże do wzrostu epitaksjalnego
JP5833297B2 (ja) * 2010-05-11 2015-12-16 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP6031733B2 (ja) * 2010-09-27 2016-11-24 住友電気工業株式会社 ＧａＮ結晶の製造方法
JP5678653B2 (ja) 2010-12-28 2015-03-04 三菱化学株式会社 六方晶系半導体板状結晶の製造方法
JP5458037B2 (ja) * 2011-02-18 2014-04-02 日本電信電話株式会社 窒化物半導体薄膜の成長方法
JP5440546B2 (ja) * 2011-04-28 2014-03-12 住友電気工業株式会社 結晶成長方法
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
JP5382742B2 (ja) * 2011-10-20 2014-01-08 独立行政法人産業技術総合研究所 オフ角を有する単結晶基板の製造方法
US10043662B2 (en) 2011-11-21 2018-08-07 Saint-Gobain Cristaux Et Detecteurs Method of forming semiconductor substrate
JP2012109624A (ja) * 2012-03-06 2012-06-07 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
JP6349298B2 (ja) 2012-03-21 2018-06-27 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｅｉｂｅｒｇｅｒ Ｃｏｍｐｏｕｎｄ Ｍａｔｅｒｉａｌｓ Ｇｍｂｈ Ｉｉｉ−ｎ単結晶製造方法およびｉｉｉ−ｎ単結晶
CN103378239B (zh) 2012-04-25 2016-06-08 清华大学 外延结构体
US9368582B2 (en) * 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
GB2526078A (en) * 2014-05-07 2015-11-18 Infiniled Ltd Methods and apparatus for improving micro-LED devices
FR3029942B1 (fr) * 2014-12-11 2020-12-25 Saint Gobain Lumilog Procede de fabrication de plaquettes de nitrure d'element 13 a angle de troncature non nul
CN107227490B (zh) * 2016-03-23 2021-06-18 松下知识产权经营株式会社 Iii族氮化物半导体及其制造方法
KR102680861B1 (ko) * 2016-12-15 2024-07-03 삼성전자주식회사 질화 갈륨 기판의 제조 방법
JP7079683B2 (ja) * 2018-07-11 2022-06-02 住友電気工業株式会社 窒化ガリウム結晶基板およびその結晶評価方法
CN115087767B (zh) * 2020-03-02 2024-02-20 住友电气工业株式会社 砷化镓单晶衬底和砷化镓单晶衬底的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039515A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JP3599896B2 (ja) * 1995-05-19 2004-12-08 三洋電機株式会社 半導体レーザ素子および半導体レーザ素子の製造方法
DE69842052D1 (de) * 1997-10-30 2011-01-27 Sumitomo Electric Industries Gan einkristall-substrat und herstellungsmethode
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP3929008B2 (ja) * 2000-01-14 2007-06-13 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
US6773504B2 (en) * 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112022001212T5 (de) 2021-02-25 2024-01-11 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III

Also Published As

Publication number Publication date
KR20060043770A (ko) 2006-05-15
EP1577933A3 (en) 2009-03-04
EP1577933A2 (en) 2005-09-21
KR20110088483A (ko) 2011-08-03
US20050208687A1 (en) 2005-09-22
TW200532776A (en) 2005-10-01
JP2005298319A (ja) 2005-10-27
CN1670918A (zh) 2005-09-21
US20080219910A1 (en) 2008-09-11

Similar Documents

Publication Publication Date Title
JP3888374B2 (ja) ＧａＮ単結晶基板の製造方法
JP4581490B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
JP5099763B2 (ja) 基板製造方法およびｉｉｉ族窒化物半導体結晶
JP4622447B2 (ja) Ｉｉｉ族窒化物結晶基板の製造方法
JP4691911B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
JP2006052102A (ja) Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法並びにｉｉｉ−ｖ族窒化物系半導体
KR19990088667A (ko) 질화갈륨계반도체디바이스
KR20010031642A (ko) ＧａＮ단결정기판 및 그 제조방법
JP4462251B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子
JP5051455B2 (ja) エピタキシャル成長用窒化物半導体基板の製造方法
EP1754811A1 (en) Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device
JP4952616B2 (ja) 窒化物半導体基板の製造方法
JP5120285B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
JP4479706B2 (ja) ＧａＮ自立基板の製造方法
JP2006306722A (ja) ＧａＮ単結晶基板の製造方法及びＧａＮ単結晶基板
JP2011037704A (ja) Ｉｉｉ族窒化物結晶基板の製造方法
JP5146697B2 (ja) 窒化物半導体
JP2013040059A (ja) Ｉｉｉ族窒化物半導体結晶の製造方法、及び該製造方法により製造されるｉｉｉ族窒化物半導体結晶
JP5488562B2 (ja) 窒化物半導体基板の製造方法
JP2010168277A (ja) 半導体発光装置
JP4288515B2 (ja) ＧａＮ単結晶基板、ＧａＮ単結晶基板の製造方法、ＧａＮ単結晶基板の上に作製した発光素子及びその製造方法
JP2007191321A (ja) 窒化物基板の製造方法と窒化物基板及び窒化物系半導体デバイス
JP2007197240A (ja) 窒化ガリウム単結晶基板の製造方法及び窒化ガリウム単結晶基板
JP4605513B2 (ja) 埋め込み基板結晶製造方法
JP2010105849A (ja) 窒化物単結晶体の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060127

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20060127

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20060317

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060411

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060704

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060828

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061120

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 3888374

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101208

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101208

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111208

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111208

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121208

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121208

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131208

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees