KR20060043770A - ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판 - Google Patents

ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판 Download PDF

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Publication number
KR20060043770A
KR20060043770A KR1020050022331A KR20050022331A KR20060043770A KR 20060043770 A KR20060043770 A KR 20060043770A KR 1020050022331 A KR1020050022331 A KR 1020050022331A KR 20050022331 A KR20050022331 A KR 20050022331A KR 20060043770 A KR20060043770 A KR 20060043770A
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KR
South Korea
Prior art keywords
gan
substrate
angle
gaas
single crystal
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Ceased
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KR1020050022331A
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English (en)
Korean (ko)
Inventor
히토시 가사이
겐사쿠 모토키
Original Assignee
스미토모덴키고교가부시키가이샤
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Publication of KR20060043770A publication Critical patent/KR20060043770A/ko
Ceased legal-status Critical Current

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    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B47/00—Operating or controlling locks or other fastening devices by electric or magnetic means
    • E05B47/02—Movement of the bolt by electromagnetic means; Adaptation of locks, latches, or parts thereof, for movement of the bolt by electromagnetic means
    • E05B47/026—Movement of the bolt by electromagnetic means; Adaptation of locks, latches, or parts thereof, for movement of the bolt by electromagnetic means the bolt moving rectilinearly
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B17/00—Accessories in connection with locks
    • E05B17/20—Means independent of the locking mechanism for preventing unauthorised opening, e.g. for securing the bolt in the fastening position
    • E05B17/2084—Means to prevent forced opening by attack, tampering or jimmying

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
KR1020050022331A 2004-03-17 2005-03-17 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판 Ceased KR20060043770A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00075674 2004-03-17
JP2004075674 2004-03-17
JPJP-P-2004-00276337 2004-09-24
JP2004276337A JP3888374B2 (ja) 2004-03-17 2004-09-24 ＧａＮ単結晶基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110069032A Division KR20110088483A (ko) 2004-03-17 2011-07-12 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판

Publications (1)

Publication Number Publication Date
KR20060043770A true KR20060043770A (ko) 2006-05-15

Family

ID=34840249

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020050022331A Ceased KR20060043770A (ko) 2004-03-17 2005-03-17 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판
KR1020110069032A Ceased KR20110088483A (ko) 2004-03-17 2011-07-12 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110069032A Ceased KR20110088483A (ko) 2004-03-17 2011-07-12 ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판

Country Status (6)

Country Link
US (2) US20050208687A1 (enExample)
EP (1) EP1577933A3 (enExample)
JP (1) JP3888374B2 (enExample)
KR (2) KR20060043770A (enExample)
CN (1) CN1670918A (enExample)
TW (1) TW200532776A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101250660B1 (ko) * 2008-10-17 2013-04-03 스미토모덴키고교가부시키가이샤 질화물계 반도체 발광 소자, 질화물계 반도체 발광 소자를 제작하는 방법, 및 발광 장치

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JP4691911B2 (ja) * 2004-06-11 2011-06-01 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法
KR100728533B1 (ko) * 2004-11-23 2007-06-15 삼성코닝 주식회사 질화갈륨 단결정 후막 및 이의 제조방법
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JP4873467B2 (ja) * 2006-07-27 2012-02-08 独立行政法人産業技術総合研究所 オフ角を有する単結晶基板の製造方法
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Also Published As

Publication number Publication date
US20050208687A1 (en) 2005-09-22
CN1670918A (zh) 2005-09-21
JP2005298319A (ja) 2005-10-27
TW200532776A (en) 2005-10-01
EP1577933A3 (en) 2009-03-04
EP1577933A2 (en) 2005-09-21
KR20110088483A (ko) 2011-08-03
JP3888374B2 (ja) 2007-02-28
US20080219910A1 (en) 2008-09-11

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