JP3805588B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3805588B2
JP3805588B2 JP36864099A JP36864099A JP3805588B2 JP 3805588 B2 JP3805588 B2 JP 3805588B2 JP 36864099 A JP36864099 A JP 36864099A JP 36864099 A JP36864099 A JP 36864099A JP 3805588 B2 JP3805588 B2 JP 3805588B2
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JP
Japan
Prior art keywords
film
polishing
metal
metal film
polishing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36864099A
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English (en)
Japanese (ja)
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JP2001185515A (ja
JP2001185515A5 (enExample
Inventor
誠一 近藤
正成 藤森
憲之 佐久間
喜夫 本間
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP36864099A priority Critical patent/JP3805588B2/ja
Priority to TW089113883A priority patent/TW487985B/zh
Priority to US09/637,570 priority patent/US6774041B1/en
Priority to KR1020000047456A priority patent/KR100746883B1/ko
Publication of JP2001185515A publication Critical patent/JP2001185515A/ja
Priority to US10/898,252 priority patent/US7183212B2/en
Publication of JP2001185515A5 publication Critical patent/JP2001185515A5/ja
Application granted granted Critical
Publication of JP3805588B2 publication Critical patent/JP3805588B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP36864099A 1999-12-27 1999-12-27 半導体装置の製造方法 Expired - Fee Related JP3805588B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP36864099A JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法
TW089113883A TW487985B (en) 1999-12-27 2000-07-12 Polishing method, wire forming method, method for manufacturing semiconductor device and semiconductor integrated circuit device
US09/637,570 US6774041B1 (en) 1999-12-27 2000-08-14 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device
KR1020000047456A KR100746883B1 (ko) 1999-12-27 2000-08-17 반도체 장치의 제조 방법
US10/898,252 US7183212B2 (en) 1999-12-27 2004-07-26 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36864099A JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001185515A JP2001185515A (ja) 2001-07-06
JP2001185515A5 JP2001185515A5 (enExample) 2004-10-14
JP3805588B2 true JP3805588B2 (ja) 2006-08-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP36864099A Expired - Fee Related JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6774041B1 (enExample)
JP (1) JP3805588B2 (enExample)
KR (1) KR100746883B1 (enExample)
TW (1) TW487985B (enExample)

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Also Published As

Publication number Publication date
JP2001185515A (ja) 2001-07-06
US6774041B1 (en) 2004-08-10
US20040266188A1 (en) 2004-12-30
KR20010067081A (ko) 2001-07-12
TW487985B (en) 2002-05-21
KR100746883B1 (ko) 2007-08-07
US7183212B2 (en) 2007-02-27

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