KR100746883B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100746883B1
KR100746883B1 KR1020000047456A KR20000047456A KR100746883B1 KR 100746883 B1 KR100746883 B1 KR 100746883B1 KR 1020000047456 A KR1020000047456 A KR 1020000047456A KR 20000047456 A KR20000047456 A KR 20000047456A KR 100746883 B1 KR100746883 B1 KR 100746883B1
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South Korea
Prior art keywords
polishing
metal film
film
metal
acid
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Expired - Fee Related
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KR1020000047456A
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English (en)
Korean (ko)
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KR20010067081A (ko
Inventor
곤도세이이찌
후지모리마사아끼
사꾸마노리유끼
홈마요시오
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010067081A publication Critical patent/KR20010067081A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
KR1020000047456A 1999-12-27 2000-08-17 반도체 장치의 제조 방법 Expired - Fee Related KR100746883B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36864099A JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法
JP1999-368640 1999-12-27

Publications (2)

Publication Number Publication Date
KR20010067081A KR20010067081A (ko) 2001-07-12
KR100746883B1 true KR100746883B1 (ko) 2007-08-07

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Family Applications (1)

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KR1020000047456A Expired - Fee Related KR100746883B1 (ko) 1999-12-27 2000-08-17 반도체 장치의 제조 방법

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Country Link
US (2) US6774041B1 (enExample)
JP (1) JP3805588B2 (enExample)
KR (1) KR100746883B1 (enExample)
TW (1) TW487985B (enExample)

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US20020023715A1 (en) * 2000-05-26 2002-02-28 Norio Kimura Substrate polishing apparatus and substrate polishing mehod
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
KR100359216B1 (ko) * 2000-12-13 2002-11-04 제일모직주식회사 반도체 소자의 금속층 연마용 슬러리
US7242044B2 (en) * 2001-08-28 2007-07-10 Tdk Corporation Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer capacitor
KR100939472B1 (ko) * 2001-10-26 2010-01-29 아사히 가라스 가부시키가이샤 연마제, 그 제조방법 및 연마방법
US6653224B1 (en) * 2001-12-27 2003-11-25 Lam Research Corporation Methods for fabricating interconnect structures having Low K dielectric properties
KR100449611B1 (ko) * 2001-12-28 2004-09-22 제일모직주식회사 금속배선 연마용 슬러리 조성물
KR100449614B1 (ko) * 2001-12-28 2004-09-22 제일모직주식회사 침식현상이 개선된 금속배선 연마용 슬러리 조성물
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
CN100336179C (zh) * 2002-04-30 2007-09-05 日立化成工业株式会社 研磨液及研磨方法
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US8372757B2 (en) * 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
US8530359B2 (en) 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US7972970B2 (en) * 2003-10-20 2011-07-05 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
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US7446034B2 (en) * 2005-10-06 2008-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Process for making a metal seed layer
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KR20100101136A (ko) * 2008-01-15 2010-09-16 미쓰비시 세이시 가부시키가이샤 구리 또는 구리 합금용의 에칭액, 에칭 전처리액 및 에칭 방법
TWI409868B (zh) * 2008-01-30 2013-09-21 Iv Technologies Co Ltd 研磨方法、研磨墊及研磨系統
US20100038584A1 (en) * 2008-08-13 2010-02-18 Fujimi Incorporated Polishing Composition and Polishing Method Using the Same
KR20110082146A (ko) * 2008-10-29 2011-07-18 미츠비시 가스 가가쿠 가부시키가이샤 산화아연을 주성분으로 하는 투명 도전막의 텍스처 가공액 및 요철을 갖는 투명 도전막의 제조 방법
WO2011028667A2 (en) 2009-09-02 2011-03-10 Novellus Systems, Inc. Reduced isotropic etchant material consumption and waste generation
JP5168265B2 (ja) * 2009-11-02 2013-03-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8865013B2 (en) 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US8871635B2 (en) * 2012-05-08 2014-10-28 GlobalFoundries, Inc. Integrated circuits and processes for forming integrated circuits having an embedded electrical interconnect within a substrate
KR102279498B1 (ko) * 2013-10-18 2021-07-21 주식회사 동진쎄미켐 금속 배선 식각액 조성물 및 이를 이용한 금속 배선 형성 방법
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US10157781B2 (en) * 2016-12-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using polishing process
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KR102142425B1 (ko) * 2019-10-21 2020-08-07 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
CN112786445B (zh) * 2020-12-25 2024-08-06 苏州芯联成软件有限公司 一种芯片研磨方法
JP7761356B2 (ja) * 2020-12-25 2025-10-28 東京エレクトロン株式会社 基板接合システム及び基板接合方法
CN114242895A (zh) * 2021-12-20 2022-03-25 青海亚洲硅业半导体有限公司 一种平面型异质结结构钙钛矿太阳能电池及其制备方法
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Also Published As

Publication number Publication date
TW487985B (en) 2002-05-21
US20040266188A1 (en) 2004-12-30
US6774041B1 (en) 2004-08-10
JP2001185515A (ja) 2001-07-06
US7183212B2 (en) 2007-02-27
KR20010067081A (ko) 2001-07-12
JP3805588B2 (ja) 2006-08-02

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