JP2001185515A5 - - Google Patents

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Publication number
JP2001185515A5
JP2001185515A5 JP1999368640A JP36864099A JP2001185515A5 JP 2001185515 A5 JP2001185515 A5 JP 2001185515A5 JP 1999368640 A JP1999368640 A JP 1999368640A JP 36864099 A JP36864099 A JP 36864099A JP 2001185515 A5 JP2001185515 A5 JP 2001185515A5
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JP
Japan
Prior art keywords
metal film
film
metal
polishing
semiconductor device
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Application number
JP1999368640A
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English (en)
Japanese (ja)
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JP2001185515A (ja
JP3805588B2 (ja
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Priority claimed from JP36864099A external-priority patent/JP3805588B2/ja
Priority to JP36864099A priority Critical patent/JP3805588B2/ja
Application filed filed Critical
Priority to TW089113883A priority patent/TW487985B/zh
Priority to US09/637,570 priority patent/US6774041B1/en
Priority to KR1020000047456A priority patent/KR100746883B1/ko
Publication of JP2001185515A publication Critical patent/JP2001185515A/ja
Priority to US10/898,252 priority patent/US7183212B2/en
Publication of JP2001185515A5 publication Critical patent/JP2001185515A5/ja
Publication of JP3805588B2 publication Critical patent/JP3805588B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP36864099A 1999-12-27 1999-12-27 半導体装置の製造方法 Expired - Fee Related JP3805588B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP36864099A JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法
TW089113883A TW487985B (en) 1999-12-27 2000-07-12 Polishing method, wire forming method, method for manufacturing semiconductor device and semiconductor integrated circuit device
US09/637,570 US6774041B1 (en) 1999-12-27 2000-08-14 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device
KR1020000047456A KR100746883B1 (ko) 1999-12-27 2000-08-17 반도체 장치의 제조 방법
US10/898,252 US7183212B2 (en) 1999-12-27 2004-07-26 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36864099A JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001185515A JP2001185515A (ja) 2001-07-06
JP2001185515A5 true JP2001185515A5 (enExample) 2004-10-14
JP3805588B2 JP3805588B2 (ja) 2006-08-02

Family

ID=18492353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36864099A Expired - Fee Related JP3805588B2 (ja) 1999-12-27 1999-12-27 半導体装置の製造方法

Country Status (4)

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US (2) US6774041B1 (enExample)
JP (1) JP3805588B2 (enExample)
KR (1) KR100746883B1 (enExample)
TW (1) TW487985B (enExample)

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US7446034B2 (en) * 2005-10-06 2008-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Process for making a metal seed layer
US7582557B2 (en) 2005-10-06 2009-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Process for low resistance metal cap
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US7494825B2 (en) * 2007-01-03 2009-02-24 Freescale Semiconductor, Inc. Top contact alignment in semiconductor devices
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US7777344B2 (en) 2007-04-11 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Transitional interface between metal and dielectric in interconnect structures
CN101910468B (zh) * 2008-01-15 2013-05-29 三菱制纸株式会社 用于铜或铜合金的蚀刻液、蚀刻前处理液及蚀刻方法
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US20100038584A1 (en) * 2008-08-13 2010-02-18 Fujimi Incorporated Polishing Composition and Polishing Method Using the Same
WO2010050338A1 (ja) * 2008-10-29 2010-05-06 三菱瓦斯化学株式会社 酸化亜鉛を主成分とする透明導電膜のテクスチャー加工液及び凹凸を有する透明導電膜の製造方法
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US9530737B1 (en) * 2015-09-28 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10157781B2 (en) * 2016-12-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using polishing process
US10692732B2 (en) * 2018-09-21 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. CMP slurry and CMP method
KR102142425B1 (ko) * 2019-10-21 2020-08-07 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
CN112786445B (zh) * 2020-12-25 2024-08-06 苏州芯联成软件有限公司 一种芯片研磨方法
KR20230123494A (ko) * 2020-12-25 2023-08-23 도쿄엘렉트론가부시키가이샤 기판 접합 시스템 및 기판 접합 방법
CN114242895A (zh) * 2021-12-20 2022-03-25 青海亚洲硅业半导体有限公司 一种平面型异质结结构钙钛矿太阳能电池及其制备方法
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