JP3713401B2 - チャージポンプ回路 - Google Patents

チャージポンプ回路 Download PDF

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Publication number
JP3713401B2
JP3713401B2 JP7349199A JP7349199A JP3713401B2 JP 3713401 B2 JP3713401 B2 JP 3713401B2 JP 7349199 A JP7349199 A JP 7349199A JP 7349199 A JP7349199 A JP 7349199A JP 3713401 B2 JP3713401 B2 JP 3713401B2
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JP
Japan
Prior art keywords
circuit
charge pump
input
level
potential
Prior art date
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Expired - Fee Related
Application number
JP7349199A
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English (en)
Japanese (ja)
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JP2000270541A5 (cg-RX-API-DMAC7.html
JP2000270541A (ja
Inventor
正男 栗山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7349199A priority Critical patent/JP3713401B2/ja
Priority to TW089103238A priority patent/TW451490B/zh
Priority to US09/523,729 priority patent/US6373325B1/en
Priority to KR10-2000-0013555A priority patent/KR100383205B1/ko
Publication of JP2000270541A publication Critical patent/JP2000270541A/ja
Publication of JP2000270541A5 publication Critical patent/JP2000270541A5/ja
Application granted granted Critical
Publication of JP3713401B2 publication Critical patent/JP3713401B2/ja
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP7349199A 1999-03-18 1999-03-18 チャージポンプ回路 Expired - Fee Related JP3713401B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7349199A JP3713401B2 (ja) 1999-03-18 1999-03-18 チャージポンプ回路
TW089103238A TW451490B (en) 1999-03-18 2000-02-24 Charge-pumping circuit
US09/523,729 US6373325B1 (en) 1999-03-18 2000-03-13 Semiconductor device with a charge pumping circuit
KR10-2000-0013555A KR100383205B1 (ko) 1999-03-18 2000-03-17 차지 펌프 회로를 구비한 반도체 디바이스

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7349199A JP3713401B2 (ja) 1999-03-18 1999-03-18 チャージポンプ回路

Publications (3)

Publication Number Publication Date
JP2000270541A JP2000270541A (ja) 2000-09-29
JP2000270541A5 JP2000270541A5 (cg-RX-API-DMAC7.html) 2005-05-12
JP3713401B2 true JP3713401B2 (ja) 2005-11-09

Family

ID=13519805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7349199A Expired - Fee Related JP3713401B2 (ja) 1999-03-18 1999-03-18 チャージポンプ回路

Country Status (4)

Country Link
US (1) US6373325B1 (cg-RX-API-DMAC7.html)
JP (1) JP3713401B2 (cg-RX-API-DMAC7.html)
KR (1) KR100383205B1 (cg-RX-API-DMAC7.html)
TW (1) TW451490B (cg-RX-API-DMAC7.html)

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JP4149637B2 (ja) * 2000-05-25 2008-09-10 株式会社東芝 半導体装置
JP2002208290A (ja) * 2001-01-09 2002-07-26 Mitsubishi Electric Corp チャージポンプ回路およびこれを用いた不揮発性メモリの動作方法
JP4627920B2 (ja) * 2001-04-24 2011-02-09 Ｏｋｉセミコンダクタ株式会社 電源装置
US6515902B1 (en) * 2001-06-04 2003-02-04 Advanced Micro Devices, Inc. Method and apparatus for boosting bitlines for low VCC read
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
JP3873838B2 (ja) * 2002-07-25 2007-01-31 ソニー株式会社 電池電圧動作回路
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US6965264B1 (en) * 2003-06-30 2005-11-15 National Semiconductor Corporation Adaptive threshold scaling circuit
KR100498505B1 (ko) * 2003-07-15 2005-07-01 삼성전자주식회사 승압전압 발생회로 및 승압전압 발생방법
JP2005151468A (ja) 2003-11-19 2005-06-09 Sanyo Electric Co Ltd アンプ
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7649402B1 (en) * 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7012461B1 (en) * 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
KR100680503B1 (ko) 2004-11-08 2007-02-08 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전압 발생기
KR100636508B1 (ko) * 2004-11-11 2006-10-18 삼성에스디아이 주식회사 차지펌프 회로와 이를 이용한 직류 변환장치
KR100805542B1 (ko) * 2004-12-24 2008-02-20 삼성에스디아이 주식회사 발광 표시장치 및 그의 구동방법
KR100723488B1 (ko) * 2005-06-16 2007-05-31 삼성전자주식회사 플래쉬 메모리 장치의 프로그램 동작을 위한 고전압 발생회로 및 고전압 발생 방법
KR100762691B1 (ko) * 2005-11-07 2007-10-01 삼성에스디아이 주식회사 Ｄｃ­ｄｃ 변환기 및 그를 이용한 유기발광표시장치
KR100713995B1 (ko) * 2005-11-07 2007-05-04 삼성에스디아이 주식회사 Ｄｃ­ｄｃ 변환기 및 그를 이용한 유기발광표시장치
KR100762690B1 (ko) * 2005-11-07 2007-10-01 삼성에스디아이 주식회사 데이터구동회로와 이를 이용한 유기발광표시장치
KR100703460B1 (ko) * 2005-11-07 2007-04-03 삼성에스디아이 주식회사 Ｄｃ­ｄｃ 변환기 및 그를 이용한 유기발광표시장치
KR100729353B1 (ko) * 2005-11-22 2007-06-15 삼성전자주식회사 통합된 레귤레이터/펌프 구조를 갖는 플래시 메모리 장치
JP4692327B2 (ja) * 2006-02-24 2011-06-01 株式会社デンソー 負荷駆動装置
US7348832B2 (en) * 2006-03-20 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-voltage generation system
US7626865B2 (en) 2006-06-13 2009-12-01 Micron Technology, Inc. Charge pump operation in a non-volatile memory device
US8547756B2 (en) 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
US8130547B2 (en) 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US7839689B2 (en) 2008-01-31 2010-11-23 Mosaid Technologies Incorporated Power supplies in flash memory devices and systems
JP5011182B2 (ja) * 2008-03-24 2012-08-29 ルネサスエレクトロニクス株式会社 チャージポンプ回路
KR100902060B1 (ko) * 2008-05-08 2009-06-15 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로 및 방법
JP5535600B2 (ja) 2009-11-30 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8648654B1 (en) * 2012-09-25 2014-02-11 Arm Limited Integrated circuit and method for generating a layout of such an integrated circuit
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130293A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor boosting circuit
JPH01133294A (ja) * 1987-11-18 1989-05-25 Ricoh Co Ltd メモリ用昇圧回路装置
JPH0453260A (ja) 1990-06-20 1992-02-20 Mitsubishi Electric Corp 半導体装置
JPH04268294A (ja) * 1991-02-25 1992-09-24 Nec Corp 昇圧回路
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
JP3190086B2 (ja) * 1992-01-10 2001-07-16 株式会社日立製作所 昇圧回路
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
JPH0721790A (ja) * 1993-07-05 1995-01-24 Mitsubishi Electric Corp 半導体集積回路
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
JPH114575A (ja) * 1997-06-11 1999-01-06 Nec Corp 昇圧回路
JPH1146138A (ja) 1997-07-24 1999-02-16 Sharp Corp 電流を充放電させる装置
US6002630A (en) * 1997-11-21 1999-12-14 Macronix International Co., Ltd. On chip voltage generation for low power integrated circuits

Also Published As

Publication number Publication date
KR100383205B1 (ko) 2003-05-12
TW451490B (en) 2001-08-21
JP2000270541A (ja) 2000-09-29
KR20010029599A (ko) 2001-04-06
US6373325B1 (en) 2002-04-16

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