TW451490B - Charge-pumping circuit - Google Patents

Charge-pumping circuit Download PDF

Info

Publication number
TW451490B
TW451490B TW089103238A TW89103238A TW451490B TW 451490 B TW451490 B TW 451490B TW 089103238 A TW089103238 A TW 089103238A TW 89103238 A TW89103238 A TW 89103238A TW 451490 B TW451490 B TW 451490B
Authority
TW
Taiwan
Prior art keywords
circuit
charge
voltage
level
output
Prior art date
Application number
TW089103238A
Other languages
English (en)
Chinese (zh)
Inventor
Masao Kuriyama
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW451490B publication Critical patent/TW451490B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
TW089103238A 1999-03-18 2000-02-24 Charge-pumping circuit TW451490B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7349199A JP3713401B2 (ja) 1999-03-18 1999-03-18 チャージポンプ回路

Publications (1)

Publication Number Publication Date
TW451490B true TW451490B (en) 2001-08-21

Family

ID=13519805

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089103238A TW451490B (en) 1999-03-18 2000-02-24 Charge-pumping circuit

Country Status (4)

Country Link
US (1) US6373325B1 (cg-RX-API-DMAC7.html)
JP (1) JP3713401B2 (cg-RX-API-DMAC7.html)
KR (1) KR100383205B1 (cg-RX-API-DMAC7.html)
TW (1) TW451490B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423698B2 (en) 2003-11-19 2008-09-09 Sanyo Electric Co., Ltd. Amplifier for amplifying input signal such as video signal and outputting amplified signal

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JP4149637B2 (ja) * 2000-05-25 2008-09-10 株式会社東芝 半導体装置
JP2002208290A (ja) * 2001-01-09 2002-07-26 Mitsubishi Electric Corp チャージポンプ回路およびこれを用いた不揮発性メモリの動作方法
JP4627920B2 (ja) * 2001-04-24 2011-02-09 Ｏｋｉセミコンダクタ株式会社 電源装置
US6515902B1 (en) * 2001-06-04 2003-02-04 Advanced Micro Devices, Inc. Method and apparatus for boosting bitlines for low VCC read
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
JP3873838B2 (ja) * 2002-07-25 2007-01-31 ソニー株式会社 電池電圧動作回路
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US6965264B1 (en) * 2003-06-30 2005-11-15 National Semiconductor Corporation Adaptive threshold scaling circuit
KR100498505B1 (ko) * 2003-07-15 2005-07-01 삼성전자주식회사 승압전압 발생회로 및 승압전압 발생방법
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7649402B1 (en) * 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7012461B1 (en) * 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
KR100680503B1 (ko) 2004-11-08 2007-02-08 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전압 발생기
KR100636508B1 (ko) * 2004-11-11 2006-10-18 삼성에스디아이 주식회사 차지펌프 회로와 이를 이용한 직류 변환장치
KR100805542B1 (ko) * 2004-12-24 2008-02-20 삼성에스디아이 주식회사 발광 표시장치 및 그의 구동방법
KR100723488B1 (ko) * 2005-06-16 2007-05-31 삼성전자주식회사 플래쉬 메모리 장치의 프로그램 동작을 위한 고전압 발생회로 및 고전압 발생 방법
KR100762691B1 (ko) * 2005-11-07 2007-10-01 삼성에스디아이 주식회사 Ｄｃ­ｄｃ 변환기 및 그를 이용한 유기발광표시장치
KR100713995B1 (ko) * 2005-11-07 2007-05-04 삼성에스디아이 주식회사 Ｄｃ­ｄｃ 변환기 및 그를 이용한 유기발광표시장치
KR100762690B1 (ko) * 2005-11-07 2007-10-01 삼성에스디아이 주식회사 데이터구동회로와 이를 이용한 유기발광표시장치
KR100703460B1 (ko) * 2005-11-07 2007-04-03 삼성에스디아이 주식회사 Ｄｃ­ｄｃ 변환기 및 그를 이용한 유기발광표시장치
KR100729353B1 (ko) * 2005-11-22 2007-06-15 삼성전자주식회사 통합된 레귤레이터/펌프 구조를 갖는 플래시 메모리 장치
JP4692327B2 (ja) * 2006-02-24 2011-06-01 株式会社デンソー 負荷駆動装置
US7348832B2 (en) * 2006-03-20 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-voltage generation system
US7626865B2 (en) 2006-06-13 2009-12-01 Micron Technology, Inc. Charge pump operation in a non-volatile memory device
US8547756B2 (en) 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
US8130547B2 (en) 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US7839689B2 (en) 2008-01-31 2010-11-23 Mosaid Technologies Incorporated Power supplies in flash memory devices and systems
JP5011182B2 (ja) * 2008-03-24 2012-08-29 ルネサスエレクトロニクス株式会社 チャージポンプ回路
KR100902060B1 (ko) * 2008-05-08 2009-06-15 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로 및 방법
JP5535600B2 (ja) 2009-11-30 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8648654B1 (en) * 2012-09-25 2014-02-11 Arm Limited Integrated circuit and method for generating a layout of such an integrated circuit
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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JPS57130293A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor boosting circuit
JPH01133294A (ja) * 1987-11-18 1989-05-25 Ricoh Co Ltd メモリ用昇圧回路装置
JPH0453260A (ja) 1990-06-20 1992-02-20 Mitsubishi Electric Corp 半導体装置
JPH04268294A (ja) * 1991-02-25 1992-09-24 Nec Corp 昇圧回路
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
JP3190086B2 (ja) * 1992-01-10 2001-07-16 株式会社日立製作所 昇圧回路
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
JPH0721790A (ja) * 1993-07-05 1995-01-24 Mitsubishi Electric Corp 半導体集積回路
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
JPH114575A (ja) * 1997-06-11 1999-01-06 Nec Corp 昇圧回路
JPH1146138A (ja) 1997-07-24 1999-02-16 Sharp Corp 電流を充放電させる装置
US6002630A (en) * 1997-11-21 1999-12-14 Macronix International Co., Ltd. On chip voltage generation for low power integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423698B2 (en) 2003-11-19 2008-09-09 Sanyo Electric Co., Ltd. Amplifier for amplifying input signal such as video signal and outputting amplified signal

Also Published As

Publication number Publication date
KR100383205B1 (ko) 2003-05-12
JP2000270541A (ja) 2000-09-29
KR20010029599A (ko) 2001-04-06
JP3713401B2 (ja) 2005-11-09
US6373325B1 (en) 2002-04-16

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees