JP3256636B2 - 圧接型半導体装置 - Google Patents

圧接型半導体装置

Info

Publication number
JP3256636B2
JP3256636B2 JP24692794A JP24692794A JP3256636B2 JP 3256636 B2 JP3256636 B2 JP 3256636B2 JP 24692794 A JP24692794 A JP 24692794A JP 24692794 A JP24692794 A JP 24692794A JP 3256636 B2 JP3256636 B2 JP 3256636B2
Authority
JP
Japan
Prior art keywords
electrode plate
chip
semiconductor device
electrode
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24692794A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0888240A (ja
Inventor
道明 日吉
久儀 村松
隆 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24692794A priority Critical patent/JP3256636B2/ja
Priority to MYPI95002683A priority patent/MY131127A/en
Priority to US08/526,320 priority patent/US5610439A/en
Priority to KR1019950029953A priority patent/KR100219345B1/ko
Priority to DE69534968T priority patent/DE69534968T2/de
Priority to EP95114541A priority patent/EP0702406B1/en
Priority to TW084111491A priority patent/TW281796B/zh
Publication of JPH0888240A publication Critical patent/JPH0888240A/ja
Application granted granted Critical
Publication of JP3256636B2 publication Critical patent/JP3256636B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
JP24692794A 1994-09-15 1994-09-15 圧接型半導体装置 Expired - Fee Related JP3256636B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP24692794A JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置
MYPI95002683A MY131127A (en) 1994-09-15 1995-09-09 Press-contact type semiconductor devices
US08/526,320 US5610439A (en) 1994-09-15 1995-09-11 Press-contact type semiconductor devices
KR1019950029953A KR100219345B1 (ko) 1994-09-15 1995-09-14 압접형 반도체 장치
DE69534968T DE69534968T2 (de) 1994-09-15 1995-09-15 Halbleiteranordnungen vom Druckkontakttyp
EP95114541A EP0702406B1 (en) 1994-09-15 1995-09-15 Press-contact type semiconductor devices
TW084111491A TW281796B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-09-15 1995-10-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24692794A JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置

Publications (2)

Publication Number Publication Date
JPH0888240A JPH0888240A (ja) 1996-04-02
JP3256636B2 true JP3256636B2 (ja) 2002-02-12

Family

ID=17155834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24692794A Expired - Fee Related JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置

Country Status (7)

Country Link
US (1) US5610439A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0702406B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3256636B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100219345B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69534968T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MY (1) MY131127A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW281796B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

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US10147699B2 (en) 2015-05-26 2018-12-04 Mitsubishi Electric Corporation Pressure contact type semiconductor apparatus

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JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
US5726466A (en) * 1995-09-11 1998-03-10 Kabushiki Kaisha Toshiba Press pack power semiconductor device incorporating a plurality of semiconductor elements
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
JP3319569B2 (ja) * 1996-05-31 2002-09-03 株式会社東芝 圧接型半導体装置
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JP3533317B2 (ja) * 1997-08-28 2004-05-31 株式会社東芝 圧接型半導体装置
JP3344552B2 (ja) * 1997-09-17 2002-11-11 株式会社東芝 圧接型半導体装置
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CN1236982A (zh) 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
JP2930074B1 (ja) * 1998-06-02 1999-08-03 富士電機株式会社 半導体装置
DE19843309A1 (de) * 1998-09-22 2000-03-23 Asea Brown Boveri Kurzschlussfestes IGBT Modul
JP3612226B2 (ja) * 1998-12-21 2005-01-19 株式会社東芝 半導体装置及び半導体モジュール
JP2001036002A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
US20020145188A1 (en) * 1999-09-07 2002-10-10 Hironori Kodama Flat semiconductor device and power converter employing the same
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JP3954314B2 (ja) * 2001-01-23 2007-08-08 株式会社東芝 圧接型半導体装置
JP4230681B2 (ja) 2001-07-06 2009-02-25 株式会社東芝 高耐圧半導体装置
US6803667B2 (en) * 2001-08-09 2004-10-12 Denso Corporation Semiconductor device having a protective film
JP2004023083A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 圧接型半導体装置
CN100414690C (zh) * 2003-08-21 2008-08-27 株洲时代集团公司 一种大功率器件及其散热器件的压装方法
JP4157001B2 (ja) * 2003-08-28 2008-09-24 株式会社東芝 マルチチップ圧接型半導体装置
JP4764979B2 (ja) * 2004-06-08 2011-09-07 富士電機株式会社 半導体装置
WO2013008424A1 (ja) * 2011-07-11 2013-01-17 三菱電機株式会社 電力用半導体モジュール
WO2013105161A1 (ja) 2012-01-11 2013-07-18 パナソニック株式会社 圧接型半導体装置及びその製造方法
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CN104733518B (zh) * 2013-12-24 2019-03-19 南京励盛半导体科技有限公司 一种半导体功率器件的结构
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CN107305886B (zh) * 2016-04-25 2024-04-05 华北电力大学 一种便于串联使用的大功率igbt模块
US11302592B2 (en) 2017-03-08 2022-04-12 Mediatek Inc. Semiconductor package having a stiffener ring
CN109801899B (zh) * 2018-12-27 2021-04-23 全球能源互联网研究院有限公司 一种功率半导体模块
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US5610439A (en) 1997-03-11
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