KR100219345B1 - 압접형 반도체 장치 - Google Patents

압접형 반도체 장치 Download PDF

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Publication number
KR100219345B1
KR100219345B1 KR1019950029953A KR19950029953A KR100219345B1 KR 100219345 B1 KR100219345 B1 KR 100219345B1 KR 1019950029953 A KR1019950029953 A KR 1019950029953A KR 19950029953 A KR19950029953 A KR 19950029953A KR 100219345 B1 KR100219345 B1 KR 100219345B1
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South Korea
Prior art keywords
chip
electrode
semiconductor device
plate
frame
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Expired - Fee Related
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KR1019950029953A
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English (en)
Korean (ko)
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KR960012561A (ko
Inventor
미치아키 히요시
히사요시 무라마츠
다카시 후지와라
Original Assignee
니시무로 타이죠
가부시기가이샤 도시바
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Publication of KR960012561A publication Critical patent/KR960012561A/ko
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Publication of KR100219345B1 publication Critical patent/KR100219345B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
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    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
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    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
KR1019950029953A 1994-09-15 1995-09-14 압접형 반도체 장치 Expired - Fee Related KR100219345B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24692794A JP3256636B2 (ja) 1994-09-15 1994-09-15 圧接型半導体装置
JP94-246927 1994-09-15

Publications (2)

Publication Number Publication Date
KR960012561A KR960012561A (ko) 1996-04-20
KR100219345B1 true KR100219345B1 (ko) 1999-09-01

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KR1019950029953A Expired - Fee Related KR100219345B1 (ko) 1994-09-15 1995-09-14 압접형 반도체 장치

Country Status (7)

Country Link
US (1) US5610439A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0702406B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3256636B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100219345B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69534968T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MY (1) MY131127A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW281796B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JP3117215B2 (ja) * 1990-09-28 2000-12-11 株式会社東芝 圧接型半導体装置
DE69109468T2 (de) * 1991-05-23 1995-12-14 Ansaldo Trasporti Spa Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren.
US5267867A (en) * 1992-09-11 1993-12-07 Digital Equipment Corporation Package for multiple removable integrated circuits
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法

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DE69534968T2 (de) 2007-02-08
JPH0888240A (ja) 1996-04-02
MY131127A (en) 2007-07-31
TW281796B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-07-21
EP0702406B1 (en) 2006-05-03
EP0702406A2 (en) 1996-03-20
EP0702406A3 (en) 1996-07-31
DE69534968D1 (de) 2006-06-08
JP3256636B2 (ja) 2002-02-12
US5610439A (en) 1997-03-11
KR960012561A (ko) 1996-04-20

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