DE69534968D1 - Halbleiteranordnungen vom Druckkontakttyp - Google Patents
Halbleiteranordnungen vom DruckkontakttypInfo
- Publication number
- DE69534968D1 DE69534968D1 DE69534968T DE69534968T DE69534968D1 DE 69534968 D1 DE69534968 D1 DE 69534968D1 DE 69534968 T DE69534968 T DE 69534968T DE 69534968 T DE69534968 T DE 69534968T DE 69534968 D1 DE69534968 D1 DE 69534968D1
- Authority
- DE
- Germany
- Prior art keywords
- pressure contact
- contact type
- semiconductor arrangements
- arrangements
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12035—Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24692794 | 1994-09-15 | ||
JP24692794A JP3256636B2 (ja) | 1994-09-15 | 1994-09-15 | 圧接型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69534968D1 true DE69534968D1 (de) | 2006-06-08 |
DE69534968T2 DE69534968T2 (de) | 2007-02-08 |
Family
ID=17155834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534968T Expired - Lifetime DE69534968T2 (de) | 1994-09-15 | 1995-09-15 | Halbleiteranordnungen vom Druckkontakttyp |
Country Status (7)
Country | Link |
---|---|
US (1) | US5610439A (de) |
EP (1) | EP0702406B1 (de) |
JP (1) | JP3256636B2 (de) |
KR (1) | KR100219345B1 (de) |
DE (1) | DE69534968T2 (de) |
MY (1) | MY131127A (de) |
TW (1) | TW281796B (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3258200B2 (ja) * | 1995-05-31 | 2002-02-18 | 株式会社東芝 | 圧接型半導体装置 |
US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
US5726466A (en) * | 1995-09-11 | 1998-03-10 | Kabushiki Kaisha Toshiba | Press pack power semiconductor device incorporating a plurality of semiconductor elements |
JP3018971B2 (ja) * | 1995-12-18 | 2000-03-13 | 富士電機株式会社 | 半導体装置 |
JP3319569B2 (ja) * | 1996-05-31 | 2002-09-03 | 株式会社東芝 | 圧接型半導体装置 |
US6125529A (en) * | 1996-06-17 | 2000-10-03 | Thermometrics, Inc. | Method of making wafer based sensors and wafer chip sensors |
JP3426101B2 (ja) * | 1997-02-25 | 2003-07-14 | 三菱電機株式会社 | 整流装置 |
WO1998043301A1 (en) * | 1997-03-26 | 1998-10-01 | Hitachi, Ltd. | Flat semiconductor device and power converter employing the same |
JP3480811B2 (ja) * | 1997-07-15 | 2003-12-22 | 株式会社東芝 | 電圧駆動型電力用半導体装置 |
JP3533317B2 (ja) * | 1997-08-28 | 2004-05-31 | 株式会社東芝 | 圧接型半導体装置 |
JP3344552B2 (ja) * | 1997-09-17 | 2002-11-11 | 株式会社東芝 | 圧接型半導体装置 |
GB9725960D0 (en) * | 1997-12-08 | 1998-02-04 | Westinghouse Brake & Signal | Encapsulating semiconductor chips |
CN1236982A (zh) | 1998-01-22 | 1999-12-01 | 株式会社日立制作所 | 压力接触型半导体器件及其转换器 |
JP2930074B1 (ja) * | 1998-06-02 | 1999-08-03 | 富士電機株式会社 | 半導体装置 |
DE19843309A1 (de) | 1998-09-22 | 2000-03-23 | Asea Brown Boveri | Kurzschlussfestes IGBT Modul |
JP3612226B2 (ja) * | 1998-12-21 | 2005-01-19 | 株式会社東芝 | 半導体装置及び半導体モジュール |
JP2001036002A (ja) * | 1999-07-23 | 2001-02-09 | Fuji Electric Co Ltd | 半導体装置 |
US20020145188A1 (en) * | 1999-09-07 | 2002-10-10 | Hironori Kodama | Flat semiconductor device and power converter employing the same |
DE10048859B4 (de) * | 2000-10-02 | 2005-12-15 | Infineon Technologies Ag | Druckkontaktanordnung sowie deren Verwendung |
JP3954314B2 (ja) * | 2001-01-23 | 2007-08-08 | 株式会社東芝 | 圧接型半導体装置 |
JP4230681B2 (ja) | 2001-07-06 | 2009-02-25 | 株式会社東芝 | 高耐圧半導体装置 |
US6803667B2 (en) * | 2001-08-09 | 2004-10-12 | Denso Corporation | Semiconductor device having a protective film |
JP2004023083A (ja) * | 2002-06-20 | 2004-01-22 | Toshiba Corp | 圧接型半導体装置 |
CN100414690C (zh) * | 2003-08-21 | 2008-08-27 | 株洲时代集团公司 | 一种大功率器件及其散热器件的压装方法 |
JP4157001B2 (ja) * | 2003-08-28 | 2008-09-24 | 株式会社東芝 | マルチチップ圧接型半導体装置 |
JP4764979B2 (ja) * | 2004-06-08 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
CN103650137B (zh) * | 2011-07-11 | 2017-09-29 | 三菱电机株式会社 | 功率半导体模块 |
WO2013105161A1 (ja) | 2012-01-11 | 2013-07-18 | パナソニック株式会社 | 圧接型半導体装置及びその製造方法 |
CN103390642B (zh) | 2013-08-01 | 2016-06-22 | 株洲南车时代电气股份有限公司 | 一种igbt器件及整晶圆igbt芯片的封装方法 |
US9177943B2 (en) * | 2013-10-15 | 2015-11-03 | Ixys Corporation | Power device cassette with auxiliary emitter contact |
CN104733518B (zh) * | 2013-12-24 | 2019-03-19 | 南京励盛半导体科技有限公司 | 一种半导体功率器件的结构 |
DE102014102493A1 (de) * | 2014-02-26 | 2015-08-27 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verbesserte Scheibenzelle für mehrere druckkontaktierte Halbleiterbauelemente |
DE102014104718B3 (de) * | 2014-04-03 | 2015-08-20 | Infineon Technologies Ag | Halbleiterbaugruppe mit Chiparrays |
EP2966681A1 (de) * | 2014-07-09 | 2016-01-13 | GE Energy Power Conversion Technology Ltd | Leistungshalbleiterbauelemente |
US10551165B2 (en) * | 2015-05-01 | 2020-02-04 | Adarza Biosystems, Inc. | Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings |
WO2016189953A1 (ja) | 2015-05-26 | 2016-12-01 | 三菱電機株式会社 | 圧接型半導体装置 |
CN107305886B (zh) * | 2016-04-25 | 2024-04-05 | 华北电力大学 | 一种便于串联使用的大功率igbt模块 |
US11302592B2 (en) | 2017-03-08 | 2022-04-12 | Mediatek Inc. | Semiconductor package having a stiffener ring |
CN109801899B (zh) * | 2018-12-27 | 2021-04-23 | 全球能源互联网研究院有限公司 | 一种功率半导体模块 |
US11488903B2 (en) * | 2020-01-28 | 2022-11-01 | Littelfuse, Inc. | Semiconductor chip package and method of assembly |
US11764209B2 (en) | 2020-10-19 | 2023-09-19 | MW RF Semiconductors, LLC | Power semiconductor device with forced carrier extraction and method of manufacture |
CN112687676B (zh) * | 2020-12-14 | 2023-06-27 | 株洲中车时代半导体有限公司 | 压接式igbt子模组及压接式igbt模块 |
DE112021007808T5 (de) | 2021-06-11 | 2024-03-21 | Mitsubishi Electric Corporation | Halbleitereinrichtung vom druckkontakttyp |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0064383A3 (de) * | 1981-05-06 | 1984-06-27 | LUCAS INDUSTRIES public limited company | Ein Halbleitergehäuse |
US4647959A (en) * | 1985-05-20 | 1987-03-03 | Tektronix, Inc. | Integrated circuit package, and method of forming an integrated circuit package |
JP3137375B2 (ja) * | 1990-09-20 | 2001-02-19 | 株式会社東芝 | 圧接型半導体装置 |
JP3117215B2 (ja) * | 1990-09-28 | 2000-12-11 | 株式会社東芝 | 圧接型半導体装置 |
DE69109468T2 (de) * | 1991-05-23 | 1995-12-14 | Sgs Thomson Microelectronics | Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren. |
US5267867A (en) * | 1992-09-11 | 1993-12-07 | Digital Equipment Corporation | Package for multiple removable integrated circuits |
JP3180863B2 (ja) * | 1993-07-27 | 2001-06-25 | 富士電機株式会社 | 加圧接触形半導体装置およびその組立方法 |
-
1994
- 1994-09-15 JP JP24692794A patent/JP3256636B2/ja not_active Expired - Fee Related
-
1995
- 1995-09-09 MY MYPI95002683A patent/MY131127A/en unknown
- 1995-09-11 US US08/526,320 patent/US5610439A/en not_active Expired - Lifetime
- 1995-09-14 KR KR1019950029953A patent/KR100219345B1/ko not_active IP Right Cessation
- 1995-09-15 DE DE69534968T patent/DE69534968T2/de not_active Expired - Lifetime
- 1995-09-15 EP EP95114541A patent/EP0702406B1/de not_active Expired - Lifetime
- 1995-10-30 TW TW084111491A patent/TW281796B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MY131127A (en) | 2007-07-31 |
EP0702406B1 (de) | 2006-05-03 |
EP0702406A2 (de) | 1996-03-20 |
KR960012561A (ko) | 1996-04-20 |
US5610439A (en) | 1997-03-11 |
KR100219345B1 (ko) | 1999-09-01 |
TW281796B (de) | 1996-07-21 |
DE69534968T2 (de) | 2007-02-08 |
EP0702406A3 (de) | 1996-07-31 |
JP3256636B2 (ja) | 2002-02-12 |
JPH0888240A (ja) | 1996-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69534968D1 (de) | Halbleiteranordnungen vom Druckkontakttyp | |
DE69527394T2 (de) | Halbleiterbaueinheit | |
DE69535551D1 (de) | Halbleiteranordnung mit Kontaktlöchern | |
FI964060A (fi) | Kosketusjousi | |
DE69616013D1 (de) | Halbleiteranordnung vom hochspannungs-ldmos-typ | |
DE69526999T2 (de) | Spannungsisolierter Halbleiter-Druckwandler | |
DE69900274D1 (de) | Mehrchip-Halbleiter-Leistungsbauelement vom Druckkontakttyp | |
DE69508046D1 (de) | Integrierte halbleiteranordnung | |
DE69520820T2 (de) | Gekapselte Kontaktanordnung | |
DE9407499U1 (de) | Elektrisches Kontaktelement | |
DE69509285T2 (de) | Halbleiteranordnung vom Druckkontakttyp | |
DE69512526T2 (de) | Elektrisches kontaktelement | |
DE69128226D1 (de) | Halbleiteranordnung vom Druckkontakttyp | |
DE69505505T2 (de) | Halbleiterbauelement vom MOS-Typ | |
DE69031796D1 (de) | Leistungshalbleiteranordnung vom Drucktyp | |
DE69635946D1 (de) | Halbleiteranordnung vom Druckkontakttyp | |
EP0687014A3 (de) | Druckkontakt-Halbleitervorrichtung, vorzugsweise vom auf Licht ansprechenden Typ | |
DE59407823D1 (de) | Kontaktelement | |
DE59607616D1 (de) | Metall-Halbleiterkontakt | |
KR950028703U (ko) | 반도체 장치 | |
DE59701580D1 (de) | Supraleiter/halbleiter/supraleiter-stufenkontakt | |
KR960019089U (ko) | 반도체장치의 콘택구조 | |
DE29515557U1 (de) | Chip mit radialsymmetrischer Kontaktanordnung | |
DE9419252U1 (de) | Kontaktelementen-Verbindung | |
KR960025445U (ko) | 반도체 제조용 언로더 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |