DE69509285T2 - Halbleiteranordnung vom Druckkontakttyp - Google Patents

Halbleiteranordnung vom Druckkontakttyp

Info

Publication number
DE69509285T2
DE69509285T2 DE1995609285 DE69509285T DE69509285T2 DE 69509285 T2 DE69509285 T2 DE 69509285T2 DE 1995609285 DE1995609285 DE 1995609285 DE 69509285 T DE69509285 T DE 69509285T DE 69509285 T2 DE69509285 T2 DE 69509285T2
Authority
DE
Germany
Prior art keywords
semiconductor device
type semiconductor
pressure contact
contact type
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1995609285
Other languages
English (en)
Other versions
DE69509285D1 (de
Inventor
Kazunori Taguchi
Kyoutaro Hirasawa
Yuzuru Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69509285D1 publication Critical patent/DE69509285D1/de
Publication of DE69509285T2 publication Critical patent/DE69509285T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
DE1995609285 1994-02-23 1995-02-16 Halbleiteranordnung vom Druckkontakttyp Expired - Lifetime DE69509285T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2542194A JP3471880B2 (ja) 1994-02-23 1994-02-23 圧接型半導体装置

Publications (2)

Publication Number Publication Date
DE69509285D1 DE69509285D1 (de) 1999-06-02
DE69509285T2 true DE69509285T2 (de) 1999-09-02

Family

ID=12165496

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995609285 Expired - Lifetime DE69509285T2 (de) 1994-02-23 1995-02-16 Halbleiteranordnung vom Druckkontakttyp

Country Status (4)

Country Link
US (1) US5641976A (de)
EP (1) EP0669652B1 (de)
JP (1) JP3471880B2 (de)
DE (1) DE69509285T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09135023A (ja) * 1995-11-08 1997-05-20 Toshiba Corp 圧接型半導体装置
JP3550243B2 (ja) * 1996-01-30 2004-08-04 株式会社東芝 内部圧接型半導体装置
DE19726534A1 (de) * 1997-06-23 1998-12-24 Asea Brown Boveri Leistungshalbleitermodul mit geschlossenen Submodulen
US5869897A (en) * 1997-10-22 1999-02-09 Ericcson, Inc. Mounting arrangement for securing an intergrated circuit package to heat sink
GB9725960D0 (en) * 1997-12-08 1998-02-04 Westinghouse Brake & Signal Encapsulating semiconductor chips
DE10041112B4 (de) * 2000-08-22 2006-05-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Isolierelement
US6781227B2 (en) * 2002-01-25 2004-08-24 International Rectifier Corporation Compression assembled electronic package having a plastic molded insulation ring
EP2071621A1 (de) * 2007-12-11 2009-06-17 ABB Research Ltd. Halbleiterschaltungsanordnung mit Gate-Anschluß
JP2012059869A (ja) * 2010-09-08 2012-03-22 Toyobo Co Ltd 固定部材
CN103579165B (zh) * 2013-11-04 2016-08-31 国家电网公司 一种全压接式功率器件
WO2015110235A1 (en) * 2014-01-21 2015-07-30 Abb Technology Ag Power semiconductor device
CN104465549B (zh) * 2014-12-15 2017-11-03 株洲南车时代电气股份有限公司 一种功率半导体模块
CN107768314B (zh) * 2017-10-21 2023-08-22 江阴市赛英电子股份有限公司 一种平板弹性压接封装igbt用陶瓷管壳及制备方法
CN107768328B (zh) * 2017-10-31 2019-08-27 华北电力大学 一种实现双面散热和压力均衡的功率器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
JPS60150635A (ja) * 1984-01-18 1985-08-08 Hitachi Ltd 圧接型半導体装置
JPS6130257A (ja) * 1984-07-20 1986-02-12 Toyota Motor Corp インベストメント鋳造法における鋳型の脱型方法
JPS6130258A (ja) * 1984-07-23 1986-02-12 Takara Co Ltd 金型用マスタ−の製造方法
JPS62173741A (ja) * 1986-01-27 1987-07-30 Mitsubishi Electric Corp 半導体装置
JPS63289940A (ja) * 1987-05-22 1988-11-28 Fuji Electric Co Ltd 半導体装置
JPH0831488B2 (ja) * 1987-12-03 1996-03-27 三菱電機株式会社 半導体装置
JP2739970B2 (ja) * 1988-10-19 1998-04-15 株式会社東芝 圧接型半導体装置
JPH02126676A (ja) * 1988-11-07 1990-05-15 Fuji Electric Co Ltd 半導体装置
US4956696A (en) * 1989-08-24 1990-09-11 Sundstrand Corporation Compression loaded semiconductor device
JPH0760893B2 (ja) * 1989-11-06 1995-06-28 三菱電機株式会社 半導体装置およびその製造方法
US5371386A (en) * 1992-04-28 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of assembling the same
JP3153638B2 (ja) * 1992-06-26 2001-04-09 三菱電機株式会社 圧接型半導体装置及びその製造方法並びに熱補償板

Also Published As

Publication number Publication date
JP3471880B2 (ja) 2003-12-02
JPH07235560A (ja) 1995-09-05
EP0669652A1 (de) 1995-08-30
US5641976A (en) 1997-06-24
EP0669652B1 (de) 1999-04-28
DE69509285D1 (de) 1999-06-02

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