DE69635946D1 - Halbleiteranordnung vom Druckkontakttyp - Google Patents
Halbleiteranordnung vom DruckkontakttypInfo
- Publication number
- DE69635946D1 DE69635946D1 DE69635946T DE69635946T DE69635946D1 DE 69635946 D1 DE69635946 D1 DE 69635946D1 DE 69635946 T DE69635946 T DE 69635946T DE 69635946 T DE69635946 T DE 69635946T DE 69635946 D1 DE69635946 D1 DE 69635946D1
- Authority
- DE
- Germany
- Prior art keywords
- pressure contact
- contact type
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Measuring Fluid Pressure (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28988095 | 1995-11-08 | ||
JP7289880A JPH09135023A (ja) | 1995-11-08 | 1995-11-08 | 圧接型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69635946D1 true DE69635946D1 (de) | 2006-05-11 |
DE69635946T2 DE69635946T2 (de) | 2006-12-14 |
Family
ID=17748973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69635946T Expired - Lifetime DE69635946T2 (de) | 1995-11-08 | 1996-11-07 | Halbleiteranordnung vom Druckkontakttyp |
Country Status (4)
Country | Link |
---|---|
US (1) | US5874750A (de) |
EP (1) | EP0773585B1 (de) |
JP (1) | JPH09135023A (de) |
DE (1) | DE69635946T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3480811B2 (ja) * | 1997-07-15 | 2003-12-22 | 株式会社東芝 | 電圧駆動型電力用半導体装置 |
GB9725960D0 (en) | 1997-12-08 | 1998-02-04 | Westinghouse Brake & Signal | Encapsulating semiconductor chips |
CN100418216C (zh) * | 2004-11-30 | 2008-09-10 | 株式会社东芝 | 半导体封装及半导体模块 |
JP6094392B2 (ja) * | 2013-06-11 | 2017-03-15 | 株式会社デンソー | 半導体装置 |
CN103515365B (zh) * | 2013-10-14 | 2016-04-20 | 国家电网公司 | 一种大功率压接式igbt器件 |
JP6438839B2 (ja) * | 2015-05-18 | 2018-12-19 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置 |
CN118176592A (zh) * | 2021-11-05 | 2024-06-11 | 罗姆股份有限公司 | 半导体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IE55753B1 (en) * | 1983-09-06 | 1991-01-02 | Gen Electric | Power semiconductor device with main current section and emulation current section |
JP2739970B2 (ja) * | 1988-10-19 | 1998-04-15 | 株式会社東芝 | 圧接型半導体装置 |
US4965710A (en) * | 1989-11-16 | 1990-10-23 | International Rectifier Corporation | Insulated gate bipolar transistor power module |
EP0433650B1 (de) * | 1989-11-17 | 1998-03-04 | Kabushiki Kaisha Toshiba | Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur |
DE4216810C2 (de) * | 1991-05-31 | 1999-09-16 | Fuji Electric Co Ltd | Steuerschaltung für einen Leitfähigkeitsänderungs-MISFET |
US5337214A (en) * | 1993-05-03 | 1994-08-09 | Eaton Corporation | Bypass contactor for solid state motor starters |
JP3180863B2 (ja) * | 1993-07-27 | 2001-06-25 | 富士電機株式会社 | 加圧接触形半導体装置およびその組立方法 |
JPH07161992A (ja) * | 1993-10-14 | 1995-06-23 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JP3471880B2 (ja) * | 1994-02-23 | 2003-12-02 | 三菱電機株式会社 | 圧接型半導体装置 |
US5596466A (en) * | 1995-01-13 | 1997-01-21 | Ixys Corporation | Intelligent, isolated half-bridge power module |
-
1995
- 1995-11-08 JP JP7289880A patent/JPH09135023A/ja not_active Abandoned
-
1996
- 1996-11-06 US US08/743,812 patent/US5874750A/en not_active Expired - Lifetime
- 1996-11-07 EP EP96308082A patent/EP0773585B1/de not_active Expired - Lifetime
- 1996-11-07 DE DE69635946T patent/DE69635946T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0773585B1 (de) | 2006-03-22 |
EP0773585A3 (de) | 1998-09-09 |
EP0773585A2 (de) | 1997-05-14 |
DE69635946T2 (de) | 2006-12-14 |
US5874750A (en) | 1999-02-23 |
JPH09135023A (ja) | 1997-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |