DE68921681T2 - Flache Halbleiteranordnung vom Druckkontakt-Typ. - Google Patents
Flache Halbleiteranordnung vom Druckkontakt-Typ.Info
- Publication number
- DE68921681T2 DE68921681T2 DE1989621681 DE68921681T DE68921681T2 DE 68921681 T2 DE68921681 T2 DE 68921681T2 DE 1989621681 DE1989621681 DE 1989621681 DE 68921681 T DE68921681 T DE 68921681T DE 68921681 T2 DE68921681 T2 DE 68921681T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- type semiconductor
- pressure contact
- contact type
- flat pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01043—Technetium [Tc]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19855888A JPH0693468B2 (ja) | 1988-08-09 | 1988-08-09 | 圧接平型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68921681D1 DE68921681D1 (de) | 1995-04-20 |
DE68921681T2 true DE68921681T2 (de) | 1995-07-27 |
Family
ID=16393179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1989621681 Expired - Fee Related DE68921681T2 (de) | 1988-08-09 | 1989-08-01 | Flache Halbleiteranordnung vom Druckkontakt-Typ. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4958215A (de) |
EP (1) | EP0354454B1 (de) |
JP (1) | JPH0693468B2 (de) |
KR (1) | KR920006855B1 (de) |
DE (1) | DE68921681T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3258200B2 (ja) * | 1995-05-31 | 2002-02-18 | 株式会社東芝 | 圧接型半導体装置 |
JPH0760893B2 (ja) * | 1989-11-06 | 1995-06-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3137375B2 (ja) * | 1990-09-20 | 2001-02-19 | 株式会社東芝 | 圧接型半導体装置 |
DE4035846A1 (de) * | 1990-11-10 | 1991-06-06 | Kuntze Angelgeraete Dam | Angelrolle mit spule zur aufnahme der angelschnur |
JP3588503B2 (ja) * | 1995-06-20 | 2004-11-10 | 株式会社東芝 | 圧接型半導体装置 |
JP5051828B2 (ja) | 2007-03-19 | 2012-10-17 | 日本碍子株式会社 | 蓄熱式バーナ |
JP2016062983A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
JP6407422B2 (ja) * | 2015-05-26 | 2018-10-17 | 三菱電機株式会社 | 圧接型半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3581160A (en) * | 1968-12-23 | 1971-05-25 | Gen Electric | Semiconductor rectifier assembly having high explosion rating |
DE2704914C2 (de) * | 1977-02-05 | 1982-03-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anordnung zum Kontaktieren eingehäuster Leistungs-Halbleiterbauelemente |
JPS5929142B2 (ja) * | 1977-04-06 | 1984-07-18 | 三菱電機株式会社 | 半導体装置 |
US4402004A (en) * | 1978-01-07 | 1983-08-30 | Tokyo Shibaura Denki Kabushiki Kaisha | High current press pack semiconductor device having a mesa structure |
JPS54107264A (en) * | 1978-02-10 | 1979-08-22 | Toshiba Corp | Semiconductor device |
CH630490A5 (de) * | 1978-06-30 | 1982-06-15 | Bbc Brown Boveri & Cie | Gehaeuse fuer ein halbleiter-hochleistungsbauelement. |
DE2838997A1 (de) * | 1978-09-07 | 1980-03-20 | Bbc Brown Boveri & Cie | Verfahren zur herstellung eines dichten gehaeuses fuer einen scheibenfoermigen, mindestens einen pn-uebergang aufweisenden halbleiterkoerper |
DE2940571A1 (de) * | 1979-10-06 | 1981-04-16 | Brown, Boveri & Cie Ag, 6800 Mannheim | Modul aus wenigstens zwei halbleiterbauelementen |
JPS57100737A (en) * | 1980-12-16 | 1982-06-23 | Toshiba Corp | Semiconductor device |
DE3486256T2 (de) * | 1983-09-29 | 1994-05-11 | Toshiba Kawasaki Kk | Halbleiteranordnung in Druckpackung. |
JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
GB2162366B (en) * | 1984-07-24 | 1987-09-30 | Westinghouse Brake & Signal | Semiconductor device contact arrangements |
JP2594278B2 (ja) * | 1986-07-30 | 1997-03-26 | ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト | 加圧接続型gtoサイリスタ |
-
1988
- 1988-08-09 JP JP19855888A patent/JPH0693468B2/ja not_active Expired - Lifetime
-
1989
- 1989-07-25 US US07/384,801 patent/US4958215A/en not_active Expired - Lifetime
- 1989-08-01 EP EP19890114223 patent/EP0354454B1/de not_active Expired - Lifetime
- 1989-08-01 DE DE1989621681 patent/DE68921681T2/de not_active Expired - Fee Related
- 1989-08-05 KR KR1019890011191A patent/KR920006855B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0693468B2 (ja) | 1994-11-16 |
EP0354454B1 (de) | 1995-03-15 |
KR900004027A (ko) | 1990-03-27 |
KR920006855B1 (ko) | 1992-08-20 |
EP0354454A2 (de) | 1990-02-14 |
EP0354454A3 (en) | 1990-12-27 |
DE68921681D1 (de) | 1995-04-20 |
US4958215A (en) | 1990-09-18 |
JPH0246742A (ja) | 1990-02-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |