DE3870958D1 - Halbleiteranordnung vom druckkontakt-typ. - Google Patents

Halbleiteranordnung vom druckkontakt-typ.

Info

Publication number
DE3870958D1
DE3870958D1 DE8888105000T DE3870958T DE3870958D1 DE 3870958 D1 DE3870958 D1 DE 3870958D1 DE 8888105000 T DE8888105000 T DE 8888105000T DE 3870958 T DE3870958 T DE 3870958T DE 3870958 D1 DE3870958 D1 DE 3870958D1
Authority
DE
Germany
Prior art keywords
contact type
semiconductor arrangement
print contact
print
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888105000T
Other languages
English (en)
Inventor
Hideo C O Patent Divis Matsuda
Yasunori C O Patent Divis Usui
Shinjiro C O Patent Div Kojima
Masaru C O Patent Divisio Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3870958D1 publication Critical patent/DE3870958D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
DE8888105000T 1987-03-31 1988-03-28 Halbleiteranordnung vom druckkontakt-typ. Expired - Lifetime DE3870958D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7865387A JPH081914B2 (ja) 1987-03-31 1987-03-31 圧接型半導体装置

Publications (1)

Publication Number Publication Date
DE3870958D1 true DE3870958D1 (de) 1992-06-17

Family

ID=13667817

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888105000T Expired - Lifetime DE3870958D1 (de) 1987-03-31 1988-03-28 Halbleiteranordnung vom druckkontakt-typ.

Country Status (4)

Country Link
US (1) US4918514A (de)
EP (1) EP0285074B1 (de)
JP (1) JPH081914B2 (de)
DE (1) DE3870958D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
JP2739970B2 (ja) * 1988-10-19 1998-04-15 株式会社東芝 圧接型半導体装置
DE58905844D1 (de) * 1989-02-02 1993-11-11 Asea Brown Boveri Druckkontaktiertes Halbleiterbauelement.
US5018002A (en) * 1989-07-03 1991-05-21 General Electric Company High current hermetic package including an internal foil and having a lead extending through the package lid and a packaged semiconductor chip
JPH0760893B2 (ja) * 1989-11-06 1995-06-28 三菱電機株式会社 半導体装置およびその製造方法
JP3137375B2 (ja) * 1990-09-20 2001-02-19 株式会社東芝 圧接型半導体装置
JP2841940B2 (ja) * 1990-12-19 1998-12-24 富士電機株式会社 半導体素子
JP3084541B2 (ja) * 1992-09-18 2000-09-04 シャープ株式会社 縦型構造トランジスタ
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
EP0638928B1 (de) * 1993-08-09 1998-10-14 Siemens Aktiengesellschaft Leistungs-Halbleiterbauelement mit Druckkontakt
US5598036A (en) * 1995-06-15 1997-01-28 Industrial Technology Research Institute Ball grid array having reduced mechanical stress
JP3588503B2 (ja) * 1995-06-20 2004-11-10 株式会社東芝 圧接型半導体装置
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
JP3319569B2 (ja) * 1996-05-31 2002-09-03 株式会社東芝 圧接型半導体装置
CN1236982A (zh) * 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
DE10147887C2 (de) * 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt
JP2004023083A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 圧接型半導体装置
WO2006063539A1 (de) * 2004-12-17 2006-06-22 Siemens Aktiengesellschaft Halbleiterschaltmodul
CA2954019C (en) * 2014-07-01 2019-10-15 Siemens Aktiengesellschaft Clamping assembly having a pressure element
EP3660989A1 (de) * 2014-12-26 2020-06-03 Panasonic Intellectual Property Management Co., Ltd. Halbleiterbauelement
CN105448847A (zh) * 2015-12-05 2016-03-30 江阴市赛英电子有限公司 外置式电极陶瓷封装外壳
US10845375B2 (en) * 2016-02-19 2020-11-24 Agjunction Llc Thermal stabilization of inertial measurement units
WO2017220949A1 (en) * 2016-06-20 2017-12-28 Zhuzhou Crrc Times Electric Co. Ltd. A semiconductor device sub-assembly
JP6585569B2 (ja) * 2016-09-15 2019-10-02 株式会社東芝 半導体装置
EP3306663A1 (de) * 2016-10-05 2018-04-11 ABB Schweiz AG Sic-auf-si-basiertes halbleitermodul mit kurzschlussfehlermodus
CN111841069B (zh) * 2020-07-08 2022-05-17 湖南康易达绿茵科技有限公司 一种生物制药用提取装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929143B2 (ja) * 1978-01-07 1984-07-18 株式会社東芝 電力用半導体装置
US4402004A (en) * 1978-01-07 1983-08-30 Tokyo Shibaura Denki Kabushiki Kaisha High current press pack semiconductor device having a mesa structure
JPS54107264A (en) * 1978-02-10 1979-08-22 Toshiba Corp Semiconductor device
JPS5625250Y2 (de) * 1979-12-28 1981-06-15
JPS57181131A (en) * 1981-04-30 1982-11-08 Toshiba Corp Pressure-contact type semiconductor device
JPS59121871A (ja) * 1982-12-28 1984-07-14 Toshiba Corp 半導体装置
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
JPS60198777A (ja) * 1984-03-21 1985-10-08 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
GB2168529B (en) * 1984-12-18 1988-02-03 Marconi Electronic Devices Electrical contacts for semiconductor devices

Also Published As

Publication number Publication date
US4918514A (en) 1990-04-17
EP0285074A3 (en) 1989-03-15
JPH081914B2 (ja) 1996-01-10
EP0285074B1 (de) 1992-05-13
JPS63244745A (ja) 1988-10-12
EP0285074A2 (de) 1988-10-05

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8320 Willingness to grant licences declared (paragraph 23)