DE69128226T2 - Halbleiteranordnung vom Druckkontakttyp - Google Patents

Halbleiteranordnung vom Druckkontakttyp

Info

Publication number
DE69128226T2
DE69128226T2 DE1991628226 DE69128226T DE69128226T2 DE 69128226 T2 DE69128226 T2 DE 69128226T2 DE 1991628226 DE1991628226 DE 1991628226 DE 69128226 T DE69128226 T DE 69128226T DE 69128226 T2 DE69128226 T2 DE 69128226T2
Authority
DE
Germany
Prior art keywords
semiconductor device
type semiconductor
pressure contact
contact type
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991628226
Other languages
English (en)
Other versions
DE69128226D1 (de
Inventor
Michiaki Hiyoshi
Takashi Fujiwara
Hisashi Suzuki
Hideo Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69128226D1 publication Critical patent/DE69128226D1/de
Application granted granted Critical
Publication of DE69128226T2 publication Critical patent/DE69128226T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01088—Radium [Ra]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
DE1991628226 1990-09-20 1991-09-19 Halbleiteranordnung vom Druckkontakttyp Expired - Fee Related DE69128226T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25154990 1990-09-20
JP22710991A JP3137375B2 (ja) 1990-09-20 1991-09-06 圧接型半導体装置

Publications (2)

Publication Number Publication Date
DE69128226D1 DE69128226D1 (de) 1998-01-02
DE69128226T2 true DE69128226T2 (de) 1998-04-16

Family

ID=26527516

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991628226 Expired - Fee Related DE69128226T2 (de) 1990-09-20 1991-09-19 Halbleiteranordnung vom Druckkontakttyp

Country Status (4)

Country Link
US (1) US5360985A (de)
EP (1) EP0476661B1 (de)
JP (1) JP3137375B2 (de)
DE (1) DE69128226T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
JP2804216B2 (ja) * 1993-06-22 1998-09-24 株式会社日立製作所 ゲートターンオフサイリスタ
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
JP3256636B2 (ja) * 1994-09-15 2002-02-12 株式会社東芝 圧接型半導体装置
JP3588503B2 (ja) * 1995-06-20 2004-11-10 株式会社東芝 圧接型半導体装置
JP3319569B2 (ja) * 1996-05-31 2002-09-03 株式会社東芝 圧接型半導体装置
DE19800469A1 (de) * 1998-01-09 1999-07-15 Asea Brown Boveri Niederinduktiv angesteuerter, gategesteuerter Thyristor
CN1236982A (zh) 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
DE10258565B3 (de) * 2002-12-14 2004-08-12 Semikron Elektronik Gmbh Schaltungsanordnung für Halbleiterbauelemente und Verfahren zur Herstellung
US7447041B2 (en) * 2007-03-01 2008-11-04 Delphi Technologies, Inc. Compression connection for vertical IC packages
US8911087B2 (en) 2011-05-20 2014-12-16 Eyefluence, Inc. Systems and methods for measuring reactions of head, eyes, eyelids and pupils
JP5899952B2 (ja) * 2012-01-19 2016-04-06 株式会社明電舎 半導体モジュール
EP3324432A1 (de) * 2016-11-17 2018-05-23 Infineon Technologies AG Verfahren zur elektrischen kontaktierung von mehreren halbleiterchips
CN113223959B (zh) * 2021-04-12 2023-03-31 黄山芯微电子股份有限公司 一种压接式二极管管芯制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
JPS5495183A (en) * 1978-01-13 1979-07-27 Mitsubishi Electric Corp Pressure contact-type semiconductor device
JPS5578535A (en) * 1978-12-08 1980-06-13 Mitsubishi Electric Corp Pressure-contact type semiconductor device
DE2926756C2 (de) * 1979-07-03 1984-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Dioden-Anordnung
JPH081914B2 (ja) * 1987-03-31 1996-01-10 株式会社東芝 圧接型半導体装置
GB2215125B (en) * 1988-02-22 1991-04-24 Mitsubishi Electric Corp Semiconductor device
EP0347561B1 (de) * 1988-06-21 1994-03-16 International Business Machines Corporation Lösbare elektrische Verbindung
US4937653A (en) * 1988-07-21 1990-06-26 American Telephone And Telegraph Company Semiconductor integrated circuit chip-to-chip interconnection scheme
JPH0693468B2 (ja) * 1988-08-09 1994-11-16 株式会社東芝 圧接平型半導体装置
JP2739970B2 (ja) * 1988-10-19 1998-04-15 株式会社東芝 圧接型半導体装置

Also Published As

Publication number Publication date
EP0476661A3 (en) 1992-06-24
DE69128226D1 (de) 1998-01-02
EP0476661A2 (de) 1992-03-25
US5360985A (en) 1994-11-01
EP0476661B1 (de) 1997-11-19
JPH0541514A (ja) 1993-02-19
JP3137375B2 (ja) 2001-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee