DE69023625T2 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE69023625T2
DE69023625T2 DE69023625T DE69023625T DE69023625T2 DE 69023625 T2 DE69023625 T2 DE 69023625T2 DE 69023625 T DE69023625 T DE 69023625T DE 69023625 T DE69023625 T DE 69023625T DE 69023625 T2 DE69023625 T2 DE 69023625T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023625T
Other languages
English (en)
Other versions
DE69023625D1 (de
Inventor
John Alfred George Slatter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69023625D1 publication Critical patent/DE69023625D1/de
Publication of DE69023625T2 publication Critical patent/DE69023625T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
DE69023625T 1990-01-10 1990-12-18 Halbleitervorrichtung. Expired - Fee Related DE69023625T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9000531A GB2239986A (en) 1990-01-10 1990-01-10 A semiconductor device with increased breakdown voltage

Publications (2)

Publication Number Publication Date
DE69023625D1 DE69023625D1 (de) 1995-12-21
DE69023625T2 true DE69023625T2 (de) 1996-06-20

Family

ID=10669068

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023625T Expired - Fee Related DE69023625T2 (de) 1990-01-10 1990-12-18 Halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US5083176A (de)
EP (1) EP0436988B1 (de)
JP (1) JPH0793314B2 (de)
DE (1) DE69023625T2 (de)
GB (1) GB2239986A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0571027A1 (de) * 1992-05-21 1993-11-24 Koninklijke Philips Electronics N.V. Halbleiteranordnung, die einen lateralen DMOS-Transistor mit die Durchbruchspannung anhebenden Zonen und Vorkehrungen für den Ladungsaustausch mit dem Backgate-Gebiet enthält
DE69314401T2 (de) * 1992-07-20 1998-04-09 Koninkl Philips Electronics Nv Halbleiteranordnung für hohe Spannungen
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection
NL8005995A (nl) * 1980-11-03 1982-06-01 Philips Nv Halfgeleiderinrichting.
JPS60138963A (ja) * 1983-12-27 1985-07-23 Fuji Electric Co Ltd 半導体装置
JPH0646655B2 (ja) * 1985-04-01 1994-06-15 キヤノン株式会社 固体撮像装置
JPS6273680A (ja) * 1985-09-26 1987-04-04 Nec Corp ホト・トランジスタ
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device

Also Published As

Publication number Publication date
JPH04211133A (ja) 1992-08-03
GB2239986A (en) 1991-07-17
DE69023625D1 (de) 1995-12-21
EP0436988B1 (de) 1995-11-15
JPH0793314B2 (ja) 1995-10-09
GB9000531D0 (en) 1990-03-14
EP0436988A2 (de) 1991-07-17
EP0436988A3 (en) 1993-03-03
US5083176A (en) 1992-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL