DE69323665D1 - Halbleiterbauelement vom MIS-Typ - Google Patents

Halbleiterbauelement vom MIS-Typ

Info

Publication number
DE69323665D1
DE69323665D1 DE69323665T DE69323665T DE69323665D1 DE 69323665 D1 DE69323665 D1 DE 69323665D1 DE 69323665 T DE69323665 T DE 69323665T DE 69323665 T DE69323665 T DE 69323665T DE 69323665 D1 DE69323665 D1 DE 69323665D1
Authority
DE
Germany
Prior art keywords
semiconductor device
type semiconductor
mis type
mis
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69323665T
Other languages
English (en)
Other versions
DE69323665T2 (de
Inventor
Masahito Ohtsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69323665D1 publication Critical patent/DE69323665D1/de
Application granted granted Critical
Publication of DE69323665T2 publication Critical patent/DE69323665T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
DE69323665T 1992-07-28 1993-07-27 Halbleiterbauelement vom MIS-Typ Expired - Fee Related DE69323665T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20004892 1992-07-28
JP22537892 1992-08-25
JP03288493A JP3163820B2 (ja) 1992-07-28 1993-02-23 半導体装置

Publications (2)

Publication Number Publication Date
DE69323665D1 true DE69323665D1 (de) 1999-04-08
DE69323665T2 DE69323665T2 (de) 1999-07-01

Family

ID=27287886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69323665T Expired - Fee Related DE69323665T2 (de) 1992-07-28 1993-07-27 Halbleiterbauelement vom MIS-Typ

Country Status (4)

Country Link
US (1) US5714774A (de)
EP (1) EP0581246B1 (de)
JP (1) JP3163820B2 (de)
DE (1) DE69323665T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244430A (ja) * 1993-02-16 1994-09-02 Fuji Electric Co Ltd 半導体装置
JP3125567B2 (ja) * 1994-03-28 2001-01-22 富士電機株式会社 絶縁ゲート型サイリスタ
EP0697739B1 (de) * 1994-08-02 2001-10-31 STMicroelectronics S.r.l. Bipolartransistor mit isolierter Steuerelektrode
EP0718893A3 (de) 1994-11-25 1999-07-14 Fuji Electric Co., Ltd. MOS-gesteuerter Thyristor mit zwei Gates und Verfahren zur Herstellung desselben
JP3209091B2 (ja) * 1996-05-30 2001-09-17 富士電機株式会社 絶縁ゲートバイポーラトランジスタを備えた半導体装置
DE19750413A1 (de) * 1997-11-14 1999-05-20 Asea Brown Boveri Bipolartransistor mit isolierter Steuerelektrode (IGBT)
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
EP1060517A1 (de) 1998-02-27 2000-12-20 ABB Semiconductors AG Bipolartransistor mit isolierter gateelektrode
US6190970B1 (en) 1999-01-04 2001-02-20 Industrial Technology Research Institute Method of making power MOSFET and IGBT with optimized on-resistance and breakdown voltage
US6812526B2 (en) * 2000-03-01 2004-11-02 General Semiconductor, Inc. Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
DE10205324B4 (de) * 2001-02-09 2012-04-19 Fuji Electric Co., Ltd. Halbleiterbauelement
US6767770B1 (en) * 2002-10-01 2004-07-27 T-Ram, Inc. Method of forming self-aligned thin capacitively-coupled thyristor structure
US7125753B1 (en) 2002-10-01 2006-10-24 T-Ram Semiconductor, Inc. Self-aligned thin capacitively-coupled thyristor structure
US7368523B2 (en) 2004-11-12 2008-05-06 Eastman Chemical Company Polyester polymer and copolymer compositions containing titanium nitride particles
US7662880B2 (en) 2004-09-03 2010-02-16 Eastman Chemical Company Polyester polymer and copolymer compositions containing metallic nickel particles
US7300967B2 (en) 2004-11-12 2007-11-27 Eastman Chemical Company Polyester polymer and copolymer compositions containing metallic titanium particles
US8557950B2 (en) 2005-06-16 2013-10-15 Grupo Petrotemex, S.A. De C.V. High intrinsic viscosity melt phase polyester polymers with acceptable acetaldehyde generation rates
US8431202B2 (en) 2005-09-16 2013-04-30 Grupo Petrotemex, S.A. De C.V. Aluminum/alkaline or alkali/titanium containing polyesters having improved reheat, color and clarity
US9267007B2 (en) 2005-09-16 2016-02-23 Grupo Petrotemex, S.A. De C.V. Method for addition of additives into a polymer melt
US7838596B2 (en) 2005-09-16 2010-11-23 Eastman Chemical Company Late addition to effect compositional modifications in condensation polymers
US7745512B2 (en) 2005-09-16 2010-06-29 Eastman Chemical Company Polyester polymer and copolymer compositions containing carbon-coated iron particles
US7776942B2 (en) 2005-09-16 2010-08-17 Eastman Chemical Company Polyester polymer and copolymer compositions containing particles of titanium nitride and carbon-coated iron
US7655746B2 (en) 2005-09-16 2010-02-02 Eastman Chemical Company Phosphorus containing compounds for reducing acetaldehyde in polyesters polymers
US7932345B2 (en) 2005-09-16 2011-04-26 Grupo Petrotemex, S.A. De C.V. Aluminum containing polyester polymers having low acetaldehyde generation rates
US7709593B2 (en) 2006-07-28 2010-05-04 Eastman Chemical Company Multiple feeds of catalyst metals to a polyester production process
US7709595B2 (en) 2006-07-28 2010-05-04 Eastman Chemical Company Non-precipitating alkali/alkaline earth metal and aluminum solutions made with polyhydroxyl ether solvents
US7745368B2 (en) 2006-07-28 2010-06-29 Eastman Chemical Company Non-precipitating alkali/alkaline earth metal and aluminum compositions made with organic hydroxyacids
US8563677B2 (en) 2006-12-08 2013-10-22 Grupo Petrotemex, S.A. De C.V. Non-precipitating alkali/alkaline earth metal and aluminum solutions made with diols having at least two primary hydroxyl groups
CN102651392B (zh) 2011-02-28 2014-11-05 成都成电知力微电子设计有限公司 一种控制两种载流子的晶闸管
KR101549669B1 (ko) * 2013-12-19 2015-09-03 주식회사 성진에어로 휴대가 간편한 워터 제트 보드
GB2575810A (en) * 2018-07-23 2020-01-29 Ween Semiconductors Tech Co Ltd Power semiconductor device
GB2609343B (en) * 2018-07-23 2023-06-07 Ween Semiconductors Co Ltd Power Semiconductor Device
CN113437135B (zh) * 2021-06-25 2022-04-08 电子科技大学 一种压控型发射极关断晶闸管器件及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676574A (en) * 1979-11-26 1981-06-24 Semiconductor Res Found Schottky injection electrode type semiconductor device
JPS61263163A (ja) * 1985-05-15 1986-11-21 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
US4760431A (en) * 1985-09-30 1988-07-26 Kabushiki Kaisha Toshiba Gate turn-off thyristor with independent turn-on/off controlling transistors
JP2786196B2 (ja) * 1987-07-21 1998-08-13 株式会社デンソー 絶縁ゲート型半導体装置
EP0329993A3 (de) * 1988-02-25 1990-03-21 Siemens Aktiengesellschaft Thyristor mit geringer Ansteuerleistung
ATE93654T1 (de) * 1988-04-22 1993-09-15 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
JPH0795596B2 (ja) * 1989-10-23 1995-10-11 三菱電機株式会社 サイリスタ及びその製造方法
US5315134A (en) * 1991-06-10 1994-05-24 Kabushiki Kaisha Toshiba Thyristor with insulated gate

Also Published As

Publication number Publication date
EP0581246A3 (en) 1994-08-24
JP3163820B2 (ja) 2001-05-08
EP0581246B1 (de) 1999-03-03
EP0581246A2 (de) 1994-02-02
US5714774A (en) 1998-02-03
JPH06125078A (ja) 1994-05-06
DE69323665T2 (de) 1999-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee