JP3175334U - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
- Publication number
- JP3175334U JP3175334U JP2012000827U JP2012000827U JP3175334U JP 3175334 U JP3175334 U JP 3175334U JP 2012000827 U JP2012000827 U JP 2012000827U JP 2012000827 U JP2012000827 U JP 2012000827U JP 3175334 U JP3175334 U JP 3175334U
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- Prior art keywords
- light emitting
- layer
- semiconductor layer
- type semiconductor
- emitting diode
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- 239000004065 semiconductor Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 141
- 238000000465 moulding Methods 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 28
- 239000011241 protective layer Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】発光ダイオードは、導電性支持基板110と、導電性支持基板上の反射電極層108と、反射電極層上の第2導電型の半導体層106と、第2導電型の半導体層上の活性層112と、活性層上の第1導電型の半導体層102と、第1導電型の半導体層上の第1電極層112とを備え、第1導電型の半導体層から第2導電型の半導体層までの、幅10〜500μmのエッチング溝105を有する。
【選択図】図1
Description
Claims (7)
- 導電性支持基板と、
前記導電性支持基板上の反射電極層と、
前記反射電極層上の第2導電型の半導体層と、
前記第2導電型の半導体層上の活性層と、
前記活性層上の第1導電型の半導体層と、
前記第1導電型の半導体層上の第1電極層と
を備え、
前記第1導電型の半導体層から前記第2導電型の半導体層までの、幅10〜500μmのエッチング溝を有する、発光ダイオード。 - 第1導電型の半導体層は、GaN系化合物半導体で構成されたn型半導体層であり、
前記活性層は、量子井戸構造を有し、
第2導電型の半導体層は、GaN系化合物半導体で構成されたp型半導体層である、請求項1又は2に記載の発光ダイオード。 - 前記反射電極層はp型電極として機能する、請求項1又は2に記載の発光ダイオード。
- 前記反射電極層は、Ag、Ni及びPtのうちの少なくとも1つを含む、請求項1から3のいずれかに記載の発光ダイオード。
- 前記反射電極層は、Ag及びNiを含む、請求項4に記載の発光ダイオード。
- 前記反射電極層は、Ag、Ni及びPtを含む、請求項4又は5に記載の発光ダイオード。
- 前記導電性支持基板は金を含む、請求項1から6のいずれかに記載の発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0070431 | 2008-07-21 | ||
KR1020080070431A KR101534848B1 (ko) | 2008-07-21 | 2008-07-21 | 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012031780 Continuation | 2009-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP3175334U true JP3175334U (ja) | 2012-05-10 |
JP3175334U7 JP3175334U7 (ja) | 2012-10-11 |
Family
ID=41570723
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519986A Pending JP2011528862A (ja) | 2008-07-21 | 2009-07-21 | 発光ダイオード及びその製造方法、そして発光素子及びその発光素子の製造方法 |
JP2012000826U Expired - Lifetime JP3175270U (ja) | 2008-07-21 | 2012-02-16 | 発光素子 |
JP2012000827U Expired - Lifetime JP3175334U (ja) | 2008-07-21 | 2012-02-16 | 発光ダイオード |
JP2012031778A Active JP5709778B2 (ja) | 2008-07-21 | 2012-02-16 | 発光素子 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011519986A Pending JP2011528862A (ja) | 2008-07-21 | 2009-07-21 | 発光ダイオード及びその製造方法、そして発光素子及びその発光素子の製造方法 |
JP2012000826U Expired - Lifetime JP3175270U (ja) | 2008-07-21 | 2012-02-16 | 発光素子 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012031778A Active JP5709778B2 (ja) | 2008-07-21 | 2012-02-16 | 発光素子 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8823028B2 (ja) |
EP (1) | EP2249408B1 (ja) |
JP (4) | JP2011528862A (ja) |
KR (1) | KR101534848B1 (ja) |
CN (2) | CN101981715B (ja) |
DE (1) | DE202009018568U1 (ja) |
WO (1) | WO2010011074A2 (ja) |
Families Citing this family (20)
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KR101012517B1 (ko) * | 2008-10-22 | 2011-02-08 | 렌슬러 폴리테크닉 인스티튜트 | 발광소자 |
KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR100969100B1 (ko) * | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US8338317B2 (en) | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
KR100999733B1 (ko) | 2010-02-18 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101047721B1 (ko) * | 2010-03-09 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101646664B1 (ko) * | 2010-05-18 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
KR101689163B1 (ko) * | 2010-07-08 | 2016-12-23 | 엘지이노텍 주식회사 | 발광소자 패키지 |
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US9397274B2 (en) * | 2011-08-24 | 2016-07-19 | Lg Innotek Co., Ltd. | Light emitting device package |
JP6038443B2 (ja) * | 2011-11-21 | 2016-12-07 | スタンレー電気株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
KR20130094482A (ko) | 2012-02-16 | 2013-08-26 | 서울반도체 주식회사 | 렌즈를 갖는 발광 모듈 |
CN103474562B (zh) * | 2012-06-08 | 2016-11-23 | 展晶科技(深圳)有限公司 | 发光二极管的制造方法 |
US10468565B2 (en) | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
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2008
- 2008-07-21 KR KR1020080070431A patent/KR101534848B1/ko active IP Right Grant
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2009
- 2009-07-21 EP EP09800555.6A patent/EP2249408B1/en active Active
- 2009-07-21 CN CN200980110760.5A patent/CN101981715B/zh active Active
- 2009-07-21 JP JP2011519986A patent/JP2011528862A/ja active Pending
- 2009-07-21 WO PCT/KR2009/004025 patent/WO2010011074A2/ko active Application Filing
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Publication number | Publication date |
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KR20100009689A (ko) | 2010-01-29 |
WO2010011074A2 (ko) | 2010-01-28 |
EP2249408B1 (en) | 2019-04-17 |
KR101534848B1 (ko) | 2015-07-27 |
US20140327032A1 (en) | 2014-11-06 |
CN105185887B (zh) | 2019-06-25 |
JP3175270U (ja) | 2012-04-26 |
CN101981715B (zh) | 2015-09-16 |
DE202009018568U1 (de) | 2012-03-07 |
JP5709778B2 (ja) | 2015-04-30 |
US8823028B2 (en) | 2014-09-02 |
JP2012094926A (ja) | 2012-05-17 |
CN101981715A (zh) | 2011-02-23 |
EP2249408A4 (en) | 2016-04-20 |
US20110001161A1 (en) | 2011-01-06 |
JP2011528862A (ja) | 2011-11-24 |
EP2249408A2 (en) | 2010-11-10 |
US9680064B2 (en) | 2017-06-13 |
WO2010011074A3 (ko) | 2010-04-22 |
CN105185887A (zh) | 2015-12-23 |
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