JP3055426B2 - 分離トランジスタを有するｅｅｐｒｏｍセルとその製造・動作方法 - Google Patents

分離トランジスタを有するｅｅｐｒｏｍセルとその製造・動作方法

Info

Publication number
JP3055426B2
JP3055426B2 JP9013495A JP9013495A JP3055426B2 JP 3055426 B2 JP3055426 B2 JP 3055426B2 JP 9013495 A JP9013495 A JP 9013495A JP 9013495 A JP9013495 A JP 9013495A JP 3055426 B2 JP3055426 B2 JP 3055426B2
Authority
JP
Japan
Prior art keywords
gate
transistor
floating gate
isolation
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9013495A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07297304A (ja
Inventor
コーミン・チャン
ダニー・パクチャン・シャン
クオタン・チャン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Solutions Inc
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Solutions Inc, Motorola Inc filed Critical Motorola Solutions Inc
Publication of JPH07297304A publication Critical patent/JPH07297304A/ja
Application granted granted Critical
Publication of JP3055426B2 publication Critical patent/JP3055426B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP9013495A 1994-04-11 1995-03-24 分離トランジスタを有するｅｅｐｒｏｍセルとその製造・動作方法 Expired - Lifetime JP3055426B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US225868 1994-04-11
US08/225,868 US5471422A (en) 1994-04-11 1994-04-11 EEPROM cell with isolation transistor and methods for making and operating the same

Publications (2)

Publication Number Publication Date
JPH07297304A JPH07297304A (ja) 1995-11-10
JP3055426B2 true JP3055426B2 (ja) 2000-06-26

Family

ID=22846582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9013495A Expired - Lifetime JP3055426B2 (ja) 1994-04-11 1995-03-24 分離トランジスタを有するｅｅｐｒｏｍセルとその製造・動作方法

Country Status (7)

Country Link
US (2) US5471422A (enrdf_load_stackoverflow)
EP (1) EP0676811B1 (enrdf_load_stackoverflow)
JP (1) JP3055426B2 (enrdf_load_stackoverflow)
KR (1) KR100198911B1 (enrdf_load_stackoverflow)
CN (1) CN1038080C (enrdf_load_stackoverflow)
DE (1) DE69527388T2 (enrdf_load_stackoverflow)
TW (1) TW262593B (enrdf_load_stackoverflow)

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Also Published As

Publication number Publication date
TW262593B (enrdf_load_stackoverflow) 1995-11-11
DE69527388D1 (de) 2002-08-22
EP0676811A1 (en) 1995-10-11
EP0676811B1 (en) 2002-07-17
CN1038080C (zh) 1998-04-15
KR100198911B1 (ko) 1999-06-15
CN1115911A (zh) 1996-01-31
US5471422A (en) 1995-11-28
DE69527388T2 (de) 2002-11-28
US5646060A (en) 1997-07-08
JPH07297304A (ja) 1995-11-10

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