FR3029343B1 - Dispositif compact de memoire de type electriquement effacable et programmable - Google Patents

Dispositif compact de memoire de type electriquement effacable et programmable Download PDF

Info

Publication number
FR3029343B1
FR3029343B1 FR1461549A FR1461549A FR3029343B1 FR 3029343 B1 FR3029343 B1 FR 3029343B1 FR 1461549 A FR1461549 A FR 1461549A FR 1461549 A FR1461549 A FR 1461549A FR 3029343 B1 FR3029343 B1 FR 3029343B1
Authority
FR
France
Prior art keywords
memory device
electrically erasable
compact memory
programmable type
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1461549A
Other languages
English (en)
Other versions
FR3029343A1 (fr
Inventor
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1461549A priority Critical patent/FR3029343B1/fr
Priority to US14/864,354 priority patent/US9583193B2/en
Publication of FR3029343A1 publication Critical patent/FR3029343A1/fr
Application granted granted Critical
Publication of FR3029343B1 publication Critical patent/FR3029343B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
FR1461549A 2014-11-27 2014-11-27 Dispositif compact de memoire de type electriquement effacable et programmable Expired - Fee Related FR3029343B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1461549A FR3029343B1 (fr) 2014-11-27 2014-11-27 Dispositif compact de memoire de type electriquement effacable et programmable
US14/864,354 US9583193B2 (en) 2014-11-27 2015-09-24 Compact memory device of the EEPROM type with a vertical select transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1461549A FR3029343B1 (fr) 2014-11-27 2014-11-27 Dispositif compact de memoire de type electriquement effacable et programmable
FR1461549 2014-11-27

Publications (2)

Publication Number Publication Date
FR3029343A1 FR3029343A1 (fr) 2016-06-03
FR3029343B1 true FR3029343B1 (fr) 2018-03-30

Family

ID=52345453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1461549A Expired - Fee Related FR3029343B1 (fr) 2014-11-27 2014-11-27 Dispositif compact de memoire de type electriquement effacable et programmable

Country Status (2)

Country Link
US (1) US9583193B2 (fr)
FR (1) FR3029343B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3048115B1 (fr) * 2016-02-18 2018-07-13 Stmicroelectronics (Rousset) Sas Dispositif et procede de gestion du claquage de transistors d'acces de memoire eeprom.
FR3054723A1 (fr) 2016-07-27 2018-02-02 Stmicroelectronics (Rousset) Sas Cellule-memoire eeprom compacte avec zone d'injection tunnel reduite
CN108806751B (zh) * 2017-04-26 2021-04-09 中芯国际集成电路制造(上海)有限公司 多次可程式闪存单元阵列及其操作方法、存储器件
FR3069954B1 (fr) * 2017-08-01 2020-02-07 Stmicroelectronics (Rousset) Sas Procede de detection d'un amincissement du substrat d'un circuit integre par sa face arriere, et circuit integre associe
FR3070537A1 (fr) * 2017-08-28 2019-03-01 Stmicroelectronics (Rousset) Sas Memoire non-volatile a encombrement restreint
FR3071355B1 (fr) 2017-09-20 2019-08-30 Stmicroelectronics (Rousset) Sas Cellule-memoire eeprom compacte
FR3074605B1 (fr) 2017-12-05 2020-01-17 Stmicroelectronics (Rousset) Sas Procede de detection d'un amincissement eventuel d'un substrat d'un circuit integre par sa face arriere, et dispositif associe
US10679699B2 (en) 2018-07-30 2020-06-09 Stmicroelectronics (Rousset) Sas Non-volatile memory with double capa implant
FR3095526B1 (fr) 2019-04-25 2022-04-22 St Microelectronics Rousset Procédé d’écriture dans une mémoire EEPROM et circuit intégré correspondant
FR3113976B1 (fr) * 2020-09-07 2023-07-28 St Microelectronics Rousset Mémoire type mémoire morte électriquement programmable et effaçable
CN114037364B (zh) * 2022-01-07 2022-07-12 深圳江行联加智能科技有限公司 基于人工智能的虚拟电厂运行风险检测方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
US6307781B1 (en) * 1999-09-30 2001-10-23 Infineon Technologies Aktiengesellschaft Two transistor flash memory cell
DE10207300B4 (de) * 2002-02-21 2004-01-29 Infineon Technologies Ag Integrierter Festwertspeicher, Verfahren zum Betreiben eines solchen Festwertspeichers sowie Herstellungsverfahren
JP4619190B2 (ja) * 2005-04-28 2011-01-26 ルネサスエレクトロニクス株式会社 プログラム可能な不揮発性メモリ
US7471570B2 (en) * 2005-09-19 2008-12-30 Texas Instruments Incorporated Embedded EEPROM array techniques for higher density
US8923049B2 (en) * 2011-09-09 2014-12-30 Aplus Flash Technology, Inc 1T1b and 2T2b flash-based, data-oriented EEPROM design
FR2987696B1 (fr) * 2012-03-05 2014-11-21 St Microelectronics Rousset Procede de lecture ecriture de cellules memoire non volatiles
FR3029000B1 (fr) 2014-11-24 2017-12-22 Stmicroelectronics Rousset Dispositif de memoire non volatile compact

Also Published As

Publication number Publication date
US9583193B2 (en) 2017-02-28
FR3029343A1 (fr) 2016-06-03
US20160155506A1 (en) 2016-06-02

Similar Documents

Publication Publication Date Title
FR3029343B1 (fr) Dispositif compact de memoire de type electriquement effacable et programmable
BR112017009204A2 (pt) Derivados de feniltriazol hidroxialquil- substituído e usos dos mesmos
MA40890A (fr) Dispositif chauffant de cigarette électronique
CL2015000327S1 (es) Dispositivo electrónico.
CL2014002776S1 (es) Dispositivo electronico
MA40933A (fr) Difluorométhyl-aminopyridines et difluorométhyl-aminopyrimidines
BR112016016289A2 (pt) heteroaris e usos dos mesmos
FR3029342B1 (fr) Circuit de lecture pour memoire resistive
FR3022393B1 (fr) Dispositif de memoire vive resistive
DK3131577T3 (da) Modificerede værtsceller og anvendelser deraf
FR3020712B1 (fr) Compteur bidirectionnel en memoire flash
ES2964590T3 (es) Dispositivo de aplastamiento
FR3029000B1 (fr) Dispositif de memoire non volatile compact
FR3027444B1 (fr) Dispositif de memoire vive resistive
FR3054920B1 (fr) Dispositif compact de memoire non volatile
FR3004854B1 (fr) Dispositif de memoire ferroelectrique
FR3084963B1 (fr) Dispositif memoire
FR3019376B1 (fr) Dispositif de memoire vive resistive
FR3039702B1 (fr) Dispositif memoire
FR3022392B1 (fr) Dispositif de memoire vive resistive
FI20146041A (fi) Elektroninen laite
FR3035086B1 (fr) Dispositif de rangement et de stockage
FR3042966B1 (fr) Dispositif intra-uterin recuperable
ES2965862T3 (es) Dispositivo de generación de datos
FR3035974B1 (fr) Dispositif de lecture augmentee

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20160603

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20210705