JP2970425B2 - バイポーラトランジスタの製造方法 - Google Patents
バイポーラトランジスタの製造方法Info
- Publication number
- JP2970425B2 JP2970425B2 JP6229891A JP22989194A JP2970425B2 JP 2970425 B2 JP2970425 B2 JP 2970425B2 JP 6229891 A JP6229891 A JP 6229891A JP 22989194 A JP22989194 A JP 22989194A JP 2970425 B2 JP2970425 B2 JP 2970425B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- manufacturing
- layer
- silicon nitride
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229960000583 acetic acid Drugs 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 239000012362 glacial acetic acid Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 238000000603 solid-source molecular beam epitaxy Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 106
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000000605 extraction Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6229891A JP2970425B2 (ja) | 1994-09-26 | 1994-09-26 | バイポーラトランジスタの製造方法 |
| EP95115150A EP0704907B1 (en) | 1994-09-26 | 1995-09-26 | Bipolar transistor with a base layer having an extremely low resistance and method for fabricating the same |
| DE69530648T DE69530648T2 (de) | 1994-09-26 | 1995-09-26 | Bipolartranistor mit einem sehr niedrigen Basisschichtwiderstand und Verfahren zur Herstellung |
| US08/533,850 US5648280A (en) | 1994-09-26 | 1995-09-26 | Method for fabricating a bipolar transistor with a base layer having an extremely low resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6229891A JP2970425B2 (ja) | 1994-09-26 | 1994-09-26 | バイポーラトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0897227A JPH0897227A (ja) | 1996-04-12 |
| JP2970425B2 true JP2970425B2 (ja) | 1999-11-02 |
Family
ID=16899345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6229891A Expired - Fee Related JP2970425B2 (ja) | 1994-09-26 | 1994-09-26 | バイポーラトランジスタの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5648280A (OSRAM) |
| EP (1) | EP0704907B1 (OSRAM) |
| JP (1) | JP2970425B2 (OSRAM) |
| DE (1) | DE69530648T2 (OSRAM) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2937253B2 (ja) * | 1996-01-17 | 1999-08-23 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| CA2302758A1 (en) * | 1997-09-16 | 1999-03-25 | Eugene A. Fitzgerald | Co-planar si and ge composite substrate and method of producing same |
| US6143655A (en) | 1998-02-25 | 2000-11-07 | Micron Technology, Inc. | Methods and structures for silver interconnections in integrated circuits |
| US6121126A (en) * | 1998-02-25 | 2000-09-19 | Micron Technologies, Inc. | Methods and structures for metal interconnections in integrated circuits |
| US6492694B2 (en) | 1998-02-27 | 2002-12-10 | Micron Technology, Inc. | Highly conductive composite polysilicon gate for CMOS integrated circuits |
| US6815303B2 (en) * | 1998-04-29 | 2004-11-09 | Micron Technology, Inc. | Bipolar transistors with low-resistance emitter contacts |
| DE19845789A1 (de) * | 1998-09-21 | 2000-03-23 | Inst Halbleiterphysik Gmbh | Bipolartransistor und Verfahren zu seiner Herstellung |
| DE19845787A1 (de) * | 1998-09-21 | 2000-03-23 | Inst Halbleiterphysik Gmbh | Bipolartransistor und Verfahren zu seiner Herstellung |
| DE19845793A1 (de) | 1998-09-21 | 2000-03-23 | Inst Halbleiterphysik Gmbh | Bipolartransistor und Verfahren zu seiner Herstellung |
| US6251738B1 (en) | 2000-01-10 | 2001-06-26 | International Business Machines Corporation | Process for forming a silicon-germanium base of heterojunction bipolar transistor |
| US6573539B2 (en) | 2000-01-10 | 2003-06-03 | International Business Machines Corporation | Heterojunction bipolar transistor with silicon-germanium base |
| JPWO2002033738A1 (ja) * | 2000-10-16 | 2004-02-26 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US6784065B1 (en) | 2001-06-15 | 2004-08-31 | National Semiconductor Corporation | Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor |
| US7087979B1 (en) | 2001-06-15 | 2006-08-08 | National Semiconductor Corporation | Bipolar transistor with an ultra small self-aligned polysilicon emitter |
| US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
| DE10254663B4 (de) * | 2002-11-22 | 2005-08-04 | Austriamicrosystems Ag | Transistor mit niederohmigem Basisanschluß und Verfahren zum Herstellen |
| US6960820B2 (en) * | 2003-07-01 | 2005-11-01 | International Business Machines Corporation | Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
| US7002221B2 (en) * | 2003-08-29 | 2006-02-21 | International Business Machines Corporation | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same |
| US20050114227A1 (en) * | 2003-11-25 | 2005-05-26 | Carter Craig M. | Web-based tool for maximizing value from surplus assets |
| JP4349131B2 (ja) * | 2004-01-09 | 2009-10-21 | ソニー株式会社 | バイポーラトランジスタの製造方法及び半導体装置の製造方法 |
| EP2327089A1 (en) * | 2008-08-19 | 2011-06-01 | Nxp B.V. | Gringo heterojunction bipolar transistor with a metal extrinsic base region |
| US8716096B2 (en) | 2011-12-13 | 2014-05-06 | International Business Machines Corporation | Self-aligned emitter-base in advanced BiCMOS technology |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6453572A (en) * | 1987-08-25 | 1989-03-01 | Mitsubishi Electric Corp | Semiconductor integrated circuit device with bipolar element |
| US4910164A (en) * | 1988-07-27 | 1990-03-20 | Texas Instruments Incorporated | Method of making planarized heterostructures using selective epitaxial growth |
| JPH03227023A (ja) * | 1990-01-31 | 1991-10-08 | Nec Corp | バイポーラ・トランジスタの製造方法 |
| US5137840A (en) * | 1990-10-24 | 1992-08-11 | International Business Machines Corporation | Vertical bipolar transistor with recessed epitaxially grown intrinsic base region |
| JPH05144834A (ja) * | 1991-03-20 | 1993-06-11 | Hitachi Ltd | バイポーラトランジスタ及びその製造方法 |
| JPH05315343A (ja) * | 1992-05-12 | 1993-11-26 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1994
- 1994-09-26 JP JP6229891A patent/JP2970425B2/ja not_active Expired - Fee Related
-
1995
- 1995-09-26 EP EP95115150A patent/EP0704907B1/en not_active Expired - Lifetime
- 1995-09-26 DE DE69530648T patent/DE69530648T2/de not_active Expired - Fee Related
- 1995-09-26 US US08/533,850 patent/US5648280A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0704907B1 (en) | 2003-05-07 |
| JPH0897227A (ja) | 1996-04-12 |
| US5648280A (en) | 1997-07-15 |
| DE69530648T2 (de) | 2004-03-18 |
| EP0704907A2 (en) | 1996-04-03 |
| EP0704907A3 (OSRAM) | 1996-04-17 |
| DE69530648D1 (de) | 2003-06-12 |
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