JP2572210B2 - 縦型パワ−ｍｏｓ電界効果型半導体装置 - Google Patents

縦型パワ−ｍｏｓ電界効果型半導体装置

Info

Publication number
JP2572210B2
JP2572210B2 JP59247522A JP24752284A JP2572210B2 JP 2572210 B2 JP2572210 B2 JP 2572210B2 JP 59247522 A JP59247522 A JP 59247522A JP 24752284 A JP24752284 A JP 24752284A JP 2572210 B2 JP2572210 B2 JP 2572210B2
Authority
JP
Japan
Prior art keywords
type semiconductor
region
conductivity type
conductivity
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59247522A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61124178A (ja
Inventor
育紀 ▲高▼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59247522A priority Critical patent/JP2572210B2/ja
Priority to DE19853540433 priority patent/DE3540433A1/de
Publication of JPS61124178A publication Critical patent/JPS61124178A/ja
Application granted granted Critical
Publication of JP2572210B2 publication Critical patent/JP2572210B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
JP59247522A 1984-11-20 1984-11-20 縦型パワ−ｍｏｓ電界効果型半導体装置 Expired - Lifetime JP2572210B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59247522A JP2572210B2 (ja) 1984-11-20 1984-11-20 縦型パワ−ｍｏｓ電界効果型半導体装置
DE19853540433 DE3540433A1 (de) 1984-11-20 1985-11-14 Integriertes mosfet-bauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59247522A JP2572210B2 (ja) 1984-11-20 1984-11-20 縦型パワ−ｍｏｓ電界効果型半導体装置

Publications (2)

Publication Number Publication Date
JPS61124178A JPS61124178A (ja) 1986-06-11
JP2572210B2 true JP2572210B2 (ja) 1997-01-16

Family

ID=17164740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59247522A Expired - Lifetime JP2572210B2 (ja) 1984-11-20 1984-11-20 縦型パワ−ｍｏｓ電界効果型半導体装置

Country Status (2)

Country Link
JP (1) JP2572210B2 (enrdf_load_stackoverflow)
DE (1) DE3540433A1 (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439069A (en) * 1987-04-14 1989-02-09 Nec Corp Field-effect transistor
JP2724146B2 (ja) * 1987-05-29 1998-03-09 日産自動車株式会社 縦形ｍｏｓｆｅｔ
EP0293846A1 (de) * 1987-06-05 1988-12-07 Siemens Aktiengesellschaft MIS-Leistunsgstransistor
JPH01236656A (ja) * 1988-03-16 1989-09-21 Rohm Co Ltd 半導体装置
JP2692350B2 (ja) * 1990-04-02 1997-12-17 富士電機株式会社 Ｍｏｓ型半導体素子
JP2817536B2 (ja) * 1991-09-27 1998-10-30 日本電気株式会社 半導体装置
FR2698486B1 (fr) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Structure de protection contre les surtensions directes pour composant semiconducteur vertical.
JP3216743B2 (ja) * 1993-04-22 2001-10-09 富士電機株式会社 トランジスタ用保護ダイオード
JP5317413B2 (ja) * 2007-02-06 2013-10-16 株式会社東芝 半導体スイッチおよび当該半導体スイッチを適用した電力変換装置
JP4240140B1 (ja) 2007-09-10 2009-03-18 トヨタ自動車株式会社 給電装置とその駆動方法
CN102224593A (zh) * 2008-11-27 2011-10-19 飞思卡尔半导体公司 功率mos晶体管器件及包括其的开关装置
EP2371003B1 (en) 2008-11-27 2018-07-04 NXP USA, Inc. Power mos transistor device
CN107134478A (zh) * 2017-03-22 2017-09-05 深圳深爱半导体股份有限公司 功率半导体器件及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658261A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
JPS58124275A (ja) * 1982-01-12 1983-07-23 シ−メンス・アクチエンゲゼルシヤフト Ｍｉｓ電界効果トランジスタ
DE3245762A1 (de) * 1982-03-13 1983-09-22 Brown, Boveri & Cie Ag, 6800 Mannheim Halbleiterbauelement in modulbauweise
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
JPS5994873A (ja) * 1982-11-22 1984-05-31 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPS59149056A (ja) * 1983-02-15 1984-08-25 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
JPS6084881A (ja) * 1983-10-17 1985-05-14 Toshiba Corp 大電力ｍｏｓ　ｆｅｔとその製造方法
JPS6115370A (ja) * 1984-06-30 1986-01-23 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE3540433A1 (de) 1986-05-22
DE3540433C2 (enrdf_load_stackoverflow) 1993-04-01
JPS61124178A (ja) 1986-06-11

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