JP2025023912A5 - - Google Patents
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- JP2025023912A5 JP2025023912A5 JP2024170048A JP2024170048A JP2025023912A5 JP 2025023912 A5 JP2025023912 A5 JP 2025023912A5 JP 2024170048 A JP2024170048 A JP 2024170048A JP 2024170048 A JP2024170048 A JP 2024170048A JP 2025023912 A5 JP2025023912 A5 JP 2025023912A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial
- gan
- semiconductor structure
- epitaxial semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762447857P | 2017-01-18 | 2017-01-18 | |
| US62/447,857 | 2017-01-18 | ||
| US201762591016P | 2017-11-27 | 2017-11-27 | |
| US62/591,016 | 2017-11-27 | ||
| US15/864,977 | 2018-01-08 | ||
| US15/864,977 US10355120B2 (en) | 2017-01-18 | 2018-01-08 | Gallium nitride epitaxial structures for power devices |
| PCT/US2018/013206 WO2018136278A1 (en) | 2017-01-18 | 2018-01-10 | Gallium nitride expitaxial structures for power devices |
| JP2019538435A JP7105239B2 (ja) | 2017-01-18 | 2018-01-10 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2022110889A JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022110889A Division JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025023912A JP2025023912A (ja) | 2025-02-19 |
| JP2025023912A5 true JP2025023912A5 (enExample) | 2025-03-26 |
Family
ID=62841145
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019538435A Active JP7105239B2 (ja) | 2017-01-18 | 2018-01-10 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2022110889A Active JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2024170048A Pending JP2025023912A (ja) | 2017-01-18 | 2024-09-30 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019538435A Active JP7105239B2 (ja) | 2017-01-18 | 2018-01-10 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
| JP2022110889A Active JP7565318B2 (ja) | 2017-01-18 | 2022-07-11 | パワーデバイス用の窒化ガリウムエピタキシャル構造 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US10355120B2 (enExample) |
| EP (1) | EP3571336A4 (enExample) |
| JP (3) | JP7105239B2 (enExample) |
| KR (4) | KR102458634B1 (enExample) |
| CN (1) | CN110177905B (enExample) |
| SG (1) | SG11201906133PA (enExample) |
| TW (1) | TWI781132B (enExample) |
| WO (1) | WO2018136278A1 (enExample) |
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| US10297445B2 (en) * | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| US12484244B2 (en) | 2016-06-24 | 2025-11-25 | Wolfspeed, Inc. | Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same |
| US10892356B2 (en) | 2016-06-24 | 2021-01-12 | Cree, Inc. | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
| US10355120B2 (en) | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
| US10720520B2 (en) | 2017-06-21 | 2020-07-21 | Infineon Technologies Austria Ag | Method of controlling wafer bow in a type III-V semiconductor device |
| FR3071854A1 (fr) * | 2017-10-03 | 2019-04-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un composant electronique a heterojonction muni d'une couche barriere enterree |
| CN111146282B (zh) * | 2018-11-06 | 2023-03-28 | 世界先进积体电路股份有限公司 | 高电子迁移率晶体管装置及其制造方法 |
| TWI706563B (zh) * | 2019-03-25 | 2020-10-01 | 世界先進積體電路股份有限公司 | 半導體結構、高電子遷移率電晶體及半導體結構的製造方法 |
| US11380763B2 (en) * | 2019-04-29 | 2022-07-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Contact structures for n-type diamond |
| CN113924636A (zh) * | 2019-05-20 | 2022-01-11 | 朗姆研究公司 | 作为SiCxOy的成核层的SixNy |
| US11114555B2 (en) * | 2019-08-20 | 2021-09-07 | Vanguard International Semiconductor Corporation | High electron mobility transistor device and methods for forming the same |
| JP7319227B2 (ja) * | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法 |
| CN111902945B (zh) * | 2020-06-04 | 2022-05-20 | 英诺赛科（珠海）科技有限公司 | 半导体装置及其制造方法 |
| US11670505B2 (en) * | 2020-08-28 | 2023-06-06 | Vanguard International Semiconductor Corporation | Semiconductor substrate, semiconductor device, and method for forming semiconductor structure |
| WO2022141442A1 (zh) * | 2020-12-31 | 2022-07-07 | 华为技术有限公司 | 一种集成电路、功率放大器及电子设备 |
| WO2022160089A1 (en) * | 2021-01-26 | 2022-08-04 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
| KR20230137921A (ko) | 2021-02-05 | 2023-10-05 | 신에쯔 한도타이 가부시키가이샤 | 질화물 반도체기판 및 그의 제조방법 |
| JP7549549B2 (ja) * | 2021-02-26 | 2024-09-11 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
| CN113948391B (zh) * | 2021-08-30 | 2023-11-21 | 西安电子科技大学 | 一种硅基AlGaN/GaN HEMT器件及制备方法 |
| EP4407657A4 (en) | 2021-09-21 | 2025-08-20 | Shin Etsu Handotai Co Ltd | NITRIDE SEMICONDUCTOR SUBSTRATE AND PROCESS FOR PRODUCING THE SAME |
| JP7755451B2 (ja) * | 2021-10-27 | 2025-10-16 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
| CN114262937B (zh) * | 2021-12-20 | 2023-03-28 | 中电化合物半导体有限公司 | 一种氮化镓外延结构的制备方法 |
| JP7657530B2 (ja) * | 2021-12-28 | 2025-04-07 | 信越化学工業株式会社 | 高特性エピタキシャル成長用基板とその製造方法 |
| CN114864379A (zh) * | 2022-04-22 | 2022-08-05 | 江苏第三代半导体研究院有限公司 | 改善位错缺陷的外延方法及其外延片 |
| JP2024060665A (ja) | 2022-10-20 | 2024-05-07 | 信越半導体株式会社 | 窒化物半導体エピタキシャルウエーハの製造方法及び窒化物半導体エピタキシャルウエーハ用複合基板 |
| US20240339320A1 (en) * | 2023-04-07 | 2024-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ceramic substrate structures and methods of forming the same |
| JP2025030515A (ja) * | 2023-08-23 | 2025-03-07 | 信越半導体株式会社 | 窒化物半導体エピタキシャルウエーハ及び窒化物半導体エピタキシャルウエーハの製造方法 |
| DE102024203423A1 (de) * | 2024-04-12 | 2025-10-16 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren und Strukturen zum Reduzieren von Verformungen von Gallium-nitrid(GaN)-Vorrichtungen |
| CN118712226B (zh) * | 2024-08-29 | 2024-12-10 | 江西兆驰半导体有限公司 | 高电子迁移率晶体管外延片及其制备方法、hemt |
| CN119767735A (zh) * | 2025-03-05 | 2025-04-04 | 中科(深圳)无线半导体有限公司 | 一种氮化镓半导体芯片的外延结构 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001044124A (ja) * | 1999-07-28 | 2001-02-16 | Sony Corp | エピタキシャル層の形成方法 |
| JP3274674B2 (ja) * | 2000-05-16 | 2002-04-15 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
| FR2871172B1 (fr) * | 2004-06-03 | 2006-09-22 | Soitec Silicon On Insulator | Support d'epitaxie hybride et son procede de fabrication |
| JP2009536606A (ja) * | 2006-05-09 | 2009-10-15 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 非極性および半極性（Ａｌ、Ｇａ、Ｉｎ）Ｎの原位置欠陥低減技術 |
| US9082892B2 (en) | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
| US20090278233A1 (en) | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
| US8030666B2 (en) | 2008-04-16 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III nitride epitaxial layer on silicon substrate |
| JP2010192745A (ja) * | 2009-02-19 | 2010-09-02 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
| US9012253B2 (en) | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| US8264047B2 (en) * | 2010-05-10 | 2012-09-11 | Infineon Technologies Austria Ag | Semiconductor component with a trench edge termination |
| US20130157445A1 (en) * | 2010-08-10 | 2013-06-20 | Kimiya Miyashita | POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME |
| KR20120052160A (ko) * | 2010-11-15 | 2012-05-23 | 엔지케이 인슐레이터 엘티디 | 복합 기판 및 복합 기판의 제조 방법 |
| CN102544086B (zh) * | 2010-12-24 | 2015-04-01 | 山东华光光电子有限公司 | 氮化镓基高电子迁移率晶体管及其制作方法 |
| JP2013069935A (ja) * | 2011-09-23 | 2013-04-18 | Sumitomo Chemical Co Ltd | 半導体基板の製造方法 |
| JP6130995B2 (ja) * | 2012-02-20 | 2017-05-17 | サンケン電気株式会社 | エピタキシャル基板及び半導体装置 |
| EP2864807B1 (en) * | 2012-06-25 | 2021-05-26 | Koninklijke Philips N.V. | System and method for 3d ultrasound volume measurements |
| US9082692B2 (en) | 2013-01-02 | 2015-07-14 | Micron Technology, Inc. | Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices |
| US9147803B2 (en) | 2013-01-02 | 2015-09-29 | Micron Technology, Inc. | Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods |
| KR20150085724A (ko) * | 2014-01-16 | 2015-07-24 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
| JP2016035949A (ja) * | 2014-08-01 | 2016-03-17 | 日本電信電話株式会社 | 窒化物半導体装置の製造方法 |
| JP2016058693A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 |
| CN105047695B (zh) * | 2015-06-10 | 2018-09-25 | 上海新傲科技股份有限公司 | 用于高电子迁移率晶体管的高阻衬底以及生长方法 |
| WO2017096032A1 (en) * | 2015-12-04 | 2017-06-08 | Quora Technology, Inc. | Wide band gap device integrated circuit architecture on engineered substrate |
| KR102403038B1 (ko) * | 2016-08-23 | 2022-05-27 | 큐로미스, 인크 | 가공된 기판과 통합된 전자 전력 디바이스 |
| US10355120B2 (en) * | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
-
2018
- 2018-01-08 US US15/864,977 patent/US10355120B2/en active Active
- 2018-01-10 JP JP2019538435A patent/JP7105239B2/ja active Active
- 2018-01-10 WO PCT/US2018/013206 patent/WO2018136278A1/en not_active Ceased
- 2018-01-10 KR KR1020197024120A patent/KR102458634B1/ko active Active
- 2018-01-10 KR KR1020227035940A patent/KR102595284B1/ko active Active
- 2018-01-10 KR KR1020247007266A patent/KR102742200B1/ko active Active
- 2018-01-10 EP EP18741122.8A patent/EP3571336A4/en active Pending
- 2018-01-10 KR KR1020237036400A patent/KR102645364B1/ko active Active
- 2018-01-10 SG SG11201906133PA patent/SG11201906133PA/en unknown
- 2018-01-10 CN CN201880007184.0A patent/CN110177905B/zh active Active
- 2018-01-15 TW TW107101365A patent/TWI781132B/zh active
-
2019
- 2019-06-03 US US16/430,235 patent/US10833186B2/en active Active
-
2020
- 2020-10-01 US US17/061,241 patent/US11699750B2/en active Active
-
2022
- 2022-07-11 JP JP2022110889A patent/JP7565318B2/ja active Active
-
2023
- 2023-04-17 US US18/135,648 patent/US20230261101A1/en active Pending
-
2024
- 2024-09-30 JP JP2024170048A patent/JP2025023912A/ja active Pending
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