KR102458634B1 - 전력 디바이스를 위한 질화 갈륨 에피택셜 구조 - Google Patents

전력 디바이스를 위한 질화 갈륨 에피택셜 구조 Download PDF

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KR102458634B1
KR102458634B1 KR1020197024120A KR20197024120A KR102458634B1 KR 102458634 B1 KR102458634 B1 KR 102458634B1 KR 1020197024120 A KR1020197024120 A KR 1020197024120A KR 20197024120 A KR20197024120 A KR 20197024120A KR 102458634 B1 KR102458634 B1 KR 102458634B1
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layer
epitaxial
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epitaxial layer
substrate
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KR20190104060A (ko
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블라디미르 오드노블류도브
스티브 레스터
오즈거 악타스
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큐로미스, 인크
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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  • Crystallography & Structural Chemistry (AREA)
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  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
KR1020197024120A 2017-01-18 2018-01-10 전력 디바이스를 위한 질화 갈륨 에피택셜 구조 Active KR102458634B1 (ko)

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KR1020227035940A KR102595284B1 (ko) 2017-01-18 2018-01-10 전력 디바이스를 위한 질화 갈륨 에피택셜 구조

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201762447857P 2017-01-18 2017-01-18
US62/447,857 2017-01-18
US201762591016P 2017-11-27 2017-11-27
US62/591,016 2017-11-27
US15/864,977 2018-01-08
US15/864,977 US10355120B2 (en) 2017-01-18 2018-01-08 Gallium nitride epitaxial structures for power devices
PCT/US2018/013206 WO2018136278A1 (en) 2017-01-18 2018-01-10 Gallium nitride expitaxial structures for power devices

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KR102458634B1 true KR102458634B1 (ko) 2022-10-25

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KR1020247007266A Active KR102742200B1 (ko) 2017-01-18 2018-01-10 전력 디바이스를 위한 질화 갈륨 에피택셜 구조
KR1020197024120A Active KR102458634B1 (ko) 2017-01-18 2018-01-10 전력 디바이스를 위한 질화 갈륨 에피택셜 구조
KR1020227035940A Active KR102595284B1 (ko) 2017-01-18 2018-01-10 전력 디바이스를 위한 질화 갈륨 에피택셜 구조

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KR1020247007266A Active KR102742200B1 (ko) 2017-01-18 2018-01-10 전력 디바이스를 위한 질화 갈륨 에피택셜 구조

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US (4) US10355120B2 (enExample)
EP (1) EP3571336A4 (enExample)
JP (3) JP7105239B2 (enExample)
KR (4) KR102645364B1 (enExample)
CN (2) CN110177905B (enExample)
SG (1) SG11201906133PA (enExample)
TW (1) TWI781132B (enExample)
WO (1) WO2018136278A1 (enExample)

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US10355120B2 (en) 2017-01-18 2019-07-16 QROMIS, Inc. Gallium nitride epitaxial structures for power devices
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