JP7105239B2 - パワーデバイス用の窒化ガリウムエピタキシャル構造 - Google Patents

パワーデバイス用の窒化ガリウムエピタキシャル構造 Download PDF

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JP7105239B2
JP7105239B2 JP2019538435A JP2019538435A JP7105239B2 JP 7105239 B2 JP7105239 B2 JP 7105239B2 JP 2019538435 A JP2019538435 A JP 2019538435A JP 2019538435 A JP2019538435 A JP 2019538435A JP 7105239 B2 JP7105239 B2 JP 7105239B2
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epitaxial
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epitaxial layer
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JP2020505767A (ja
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オドノブリュードフ，ウラジミール
レスター，スティーブ
アクタス，オズギュル
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クロミス，インコーポレイテッド
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
JP2019538435A 2017-01-18 2018-01-10 パワーデバイス用の窒化ガリウムエピタキシャル構造 Active JP7105239B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022110889A JP7565318B2 (ja) 2017-01-18 2022-07-11 パワーデバイス用の窒化ガリウムエピタキシャル構造
JP2024170048A JP2025023912A (ja) 2017-01-18 2024-09-30 パワーデバイス用の窒化ガリウムエピタキシャル構造

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201762447857P 2017-01-18 2017-01-18
US62/447,857 2017-01-18
US201762591016P 2017-11-27 2017-11-27
US62/591,016 2017-11-27
US15/864,977 US10355120B2 (en) 2017-01-18 2018-01-08 Gallium nitride epitaxial structures for power devices
US15/864,977 2018-01-08
PCT/US2018/013206 WO2018136278A1 (en) 2017-01-18 2018-01-10 Gallium nitride expitaxial structures for power devices

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JP7105239B2 true JP7105239B2 (ja) 2022-07-22

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JP2024170048A Pending JP2025023912A (ja) 2017-01-18 2024-09-30 パワーデバイス用の窒化ガリウムエピタキシャル構造

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US (4) US10355120B2 (enExample)
EP (1) EP3571336A4 (enExample)
JP (3) JP7105239B2 (enExample)
KR (4) KR102645364B1 (enExample)
CN (2) CN114156181B (enExample)
SG (1) SG11201906133PA (enExample)
TW (1) TWI781132B (enExample)
WO (1) WO2018136278A1 (enExample)

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US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US10355120B2 (en) * 2017-01-18 2019-07-16 QROMIS, Inc. Gallium nitride epitaxial structures for power devices
US10720520B2 (en) 2017-06-21 2020-07-21 Infineon Technologies Austria Ag Method of controlling wafer bow in a type III-V semiconductor device
FR3071854A1 (fr) * 2017-10-03 2019-04-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un composant electronique a heterojonction muni d'une couche barriere enterree
CN111146282B (zh) * 2018-11-06 2023-03-28 世界先进积体电路股份有限公司 高电子迁移率晶体管装置及其制造方法
TWI706563B (zh) * 2019-03-25 2020-10-01 世界先進積體電路股份有限公司 半導體結構、高電子遷移率電晶體及半導體結構的製造方法
US11380763B2 (en) * 2019-04-29 2022-07-05 Arizona Board Of Regents On Behalf Of Arizona State University Contact structures for n-type diamond
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WO2021243653A1 (zh) * 2020-06-04 2021-12-09 英诺赛科（珠海）科技有限公司 半导体装置及其制造方法
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CN116783719A (zh) * 2020-12-31 2023-09-19 华为技术有限公司 一种集成电路、功率放大器及电子设备
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JP7549549B2 (ja) * 2021-02-26 2024-09-11 信越半導体株式会社 窒化物半導体基板およびその製造方法
CN113948391B (zh) * 2021-08-30 2023-11-21 西安电子科技大学 一种硅基AlGaN/GaN HEMT器件及制备方法
CN117941030A (zh) 2021-09-21 2024-04-26 信越半导体股份有限公司 氮化物半导体基板及其制造方法
JP7755451B2 (ja) * 2021-10-27 2025-10-16 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
CN114262937B (zh) * 2021-12-20 2023-03-28 中电化合物半导体有限公司 一种氮化镓外延结构的制备方法
JP7657530B2 (ja) * 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
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JP2024060665A (ja) 2022-10-20 2024-05-07 信越半導体株式会社 窒化物半導体エピタキシャルウエーハの製造方法及び窒化物半導体エピタキシャルウエーハ用複合基板
CN116072724B (zh) * 2023-03-07 2023-06-27 珠海镓未来科技有限公司 一种半导体功率器件及其制备方法
US20240339320A1 (en) * 2023-04-07 2024-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Ceramic substrate structures and methods of forming the same
JP2025030515A (ja) * 2023-08-23 2025-03-07 信越半導体株式会社 窒化物半導体エピタキシャルウエーハ及び窒化物半導体エピタキシャルウエーハの製造方法
DE102024203423A1 (de) * 2024-04-12 2025-10-16 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Strukturen zum Reduzieren von Verformungen von Gallium-nitrid(GaN)-Vorrichtungen
CN118712226B (zh) * 2024-08-29 2024-12-10 江西兆驰半导体有限公司 高电子迁移率晶体管外延片及其制备方法、hemt
CN119725049B (zh) * 2024-12-11 2025-12-19 南京大学 一种分层掺杂的GaN光电阴极
CN119767735A (zh) * 2025-03-05 2025-04-04 中科(深圳)无线半导体有限公司 一种氮化镓半导体芯片的外延结构

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