SG10202101505UA - Electronic power devices integrated with an engineered substrate - Google Patents

Electronic power devices integrated with an engineered substrate

Info

Publication number
SG10202101505UA
SG10202101505UA SG10202101505UA SG10202101505UA SG10202101505UA SG 10202101505U A SG10202101505U A SG 10202101505UA SG 10202101505U A SG10202101505U A SG 10202101505UA SG 10202101505U A SG10202101505U A SG 10202101505UA SG 10202101505U A SG10202101505U A SG 10202101505UA
Authority
SG
Singapore
Prior art keywords
power devices
electronic power
devices integrated
engineered substrate
engineered
Prior art date
Application number
SG10202101505UA
Inventor
Vladimir Odnoblyudov
Dilip Risbud
Ozgur Aktas
Cem Basceri
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG10202101505UA publication Critical patent/SG10202101505UA/en

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    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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