JP2013504197A5 - - Google Patents

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Publication number
JP2013504197A5
JP2013504197A5 JP2012527410A JP2012527410A JP2013504197A5 JP 2013504197 A5 JP2013504197 A5 JP 2013504197A5 JP 2012527410 A JP2012527410 A JP 2012527410A JP 2012527410 A JP2012527410 A JP 2012527410A JP 2013504197 A5 JP2013504197 A5 JP 2013504197A5
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JP
Japan
Prior art keywords
layer
curvature control
control layer
type region
disposed
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Pending
Application number
JP2012527410A
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English (en)
Japanese (ja)
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JP2013504197A (ja
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Publication date
Priority claimed from US12/555,000 external-priority patent/US20110057213A1/en
Application filed filed Critical
Publication of JP2013504197A publication Critical patent/JP2013504197A/ja
Publication of JP2013504197A5 publication Critical patent/JP2013504197A5/ja
Pending legal-status Critical Current

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JP2012527410A 2009-09-08 2010-08-04 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス Pending JP2013504197A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/555,000 US20110057213A1 (en) 2009-09-08 2009-09-08 Iii-nitride light emitting device with curvat1jre control layer
US12/555,000 2009-09-08
PCT/IB2010/053537 WO2011030238A1 (en) 2009-09-08 2010-08-04 Iii-nitride light emitting device with curvature control layer

Publications (2)

Publication Number Publication Date
JP2013504197A JP2013504197A (ja) 2013-02-04
JP2013504197A5 true JP2013504197A5 (enExample) 2013-09-26

Family

ID=43128314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012527410A Pending JP2013504197A (ja) 2009-09-08 2010-08-04 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス

Country Status (7)

Country Link
US (2) US20110057213A1 (enExample)
EP (1) EP2476144A1 (enExample)
JP (1) JP2013504197A (enExample)
KR (1) KR20120068900A (enExample)
CN (1) CN102484178A (enExample)
TW (1) TW201117418A (enExample)
WO (1) WO2011030238A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
JP5166594B1 (ja) 2011-12-12 2013-03-21 株式会社東芝 半導体発光素子
EP2696365B1 (en) * 2012-08-09 2021-06-23 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using a semiconductor buffer structure
EP2908330B1 (en) * 2012-10-12 2021-05-19 Sumitomo Electric Industries, Ltd. Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method
CN107275425B (zh) * 2013-01-31 2019-10-15 欧司朗光电半导体有限公司 半导体层序列和用于制造半导体层序列的方法
CN107408933B (zh) * 2014-10-03 2020-11-20 芬兰国家技术研究中心股份公司 温度补偿复合谐振器
CN108054260A (zh) * 2017-10-25 2018-05-18 华灿光电（浙江）有限公司 一种发光二极管的外延片及制备方法
KR102211486B1 (ko) * 2018-12-24 2021-02-02 한국세라믹기술원 전기화학적 에칭법을 이용한 프리 스탠딩 질화갈륨 기판 제조 방법 및 이를 포함하는 물분해 수소생산용 광전극
US12349528B2 (en) 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) * 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
JPH10150245A (ja) * 1996-11-21 1998-06-02 Matsushita Electric Ind Co Ltd 窒化ガリウム系半導体の製造方法
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
JP2002261033A (ja) * 2000-12-20 2002-09-13 Matsushita Electric Ind Co Ltd 半導体の製造方法、半導体基板の製造方法及び半導体発光素子
JP3866540B2 (ja) * 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
CN1324772C (zh) * 2002-06-19 2007-07-04 日本电信电话株式会社 半导体发光器件
WO2006054737A1 (en) * 2004-11-18 2006-05-26 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
US7795050B2 (en) * 2005-08-12 2010-09-14 Samsung Electronics Co., Ltd. Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same

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