JP2013504197A - 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス - Google Patents

湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス Download PDF

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Publication number
JP2013504197A
JP2013504197A JP2012527410A JP2012527410A JP2013504197A JP 2013504197 A JP2013504197 A JP 2013504197A JP 2012527410 A JP2012527410 A JP 2012527410A JP 2012527410 A JP2012527410 A JP 2012527410A JP 2013504197 A JP2013504197 A JP 2013504197A
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layer
curvature control
control layer
type region
curvature
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JP2012527410A
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Japanese (ja)
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JP2013504197A5 (enExample
Inventor
リンダ ティー ロマノ
パリヤト プラミル デブ
アンドリュー ワイ キム
ジョン エフ カエディング
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Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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Publication of JP2013504197A publication Critical patent/JP2013504197A/ja
Publication of JP2013504197A5 publication Critical patent/JP2013504197A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
JP2012527410A 2009-09-08 2010-08-04 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス Pending JP2013504197A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/555,000 US20110057213A1 (en) 2009-09-08 2009-09-08 Iii-nitride light emitting device with curvat1jre control layer
US12/555,000 2009-09-08
PCT/IB2010/053537 WO2011030238A1 (en) 2009-09-08 2010-08-04 Iii-nitride light emitting device with curvature control layer

Publications (2)

Publication Number Publication Date
JP2013504197A true JP2013504197A (ja) 2013-02-04
JP2013504197A5 JP2013504197A5 (enExample) 2013-09-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012527410A Pending JP2013504197A (ja) 2009-09-08 2010-08-04 湾曲を制御する層を備えたｉｉｉ族の窒化物の発光デバイス

Country Status (7)

Country Link
US (2) US20110057213A1 (enExample)
EP (1) EP2476144A1 (enExample)
JP (1) JP2013504197A (enExample)
KR (1) KR20120068900A (enExample)
CN (1) CN102484178A (enExample)
TW (1) TW201117418A (enExample)
WO (1) WO2011030238A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
JP5166594B1 (ja) 2011-12-12 2013-03-21 株式会社東芝 半導体発光素子
CN103578926B (zh) * 2012-08-09 2018-01-02 三星电子株式会社 半导体缓冲结构、半导体器件和制造半导体器件的方法
CN108281378B (zh) * 2012-10-12 2022-06-24 住友电气工业株式会社 Iii族氮化物复合衬底、半导体器件及它们的制造方法
KR20150113137A (ko) * 2013-01-31 2015-10-07 오스람 옵토 세미컨덕터스 게엠베하 반도체층 시퀀스 및 반도체층 시퀀스의 제조 방법
JP6615191B2 (ja) * 2014-10-03 2019-12-04 テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ 温度補償された複合共振器
CN108054260A (zh) * 2017-10-25 2018-05-18 华灿光电（浙江）有限公司 一种发光二极管的外延片及制备方法
KR102211486B1 (ko) * 2018-12-24 2021-02-02 한국세라믹기술원 전기화학적 에칭법을 이용한 프리 스탠딩 질화갈륨 기판 제조 방법 및 이를 포함하는 물분해 수소생산용 광전극
US12349528B2 (en) 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150245A (ja) * 1996-11-21 1998-06-02 Matsushita Electric Ind Co Ltd 窒化ガリウム系半導体の製造方法
JP2002261033A (ja) * 2000-12-20 2002-09-13 Matsushita Electric Ind Co Ltd 半導体の製造方法、半導体基板の製造方法及び半導体発光素子
JP2003023220A (ja) * 2001-07-06 2003-01-24 Toshiba Corp 窒化物半導体素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) * 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
KR100568701B1 (ko) * 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 반도체 발광 소자
DE112005002838T5 (de) * 2004-11-18 2007-11-15 Showa Denko K.K. Halbleiterstapelstruktur auf Basis von Galliumnitrid, Verfahren zu dessen Herstellung, Halbleitervorrichtung auf Basis von Galliumnitrid und Lampe unter Verwendung der Vorrichtung
US7795050B2 (en) * 2005-08-12 2010-09-14 Samsung Electronics Co., Ltd. Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150245A (ja) * 1996-11-21 1998-06-02 Matsushita Electric Ind Co Ltd 窒化ガリウム系半導体の製造方法
JP2002261033A (ja) * 2000-12-20 2002-09-13 Matsushita Electric Ind Co Ltd 半導体の製造方法、半導体基板の製造方法及び半導体発光素子
JP2003023220A (ja) * 2001-07-06 2003-01-24 Toshiba Corp 窒化物半導体素子

Also Published As

Publication number Publication date
KR20120068900A (ko) 2012-06-27
EP2476144A1 (en) 2012-07-18
US20120264248A1 (en) 2012-10-18
US20110057213A1 (en) 2011-03-10
TW201117418A (en) 2011-05-16
CN102484178A (zh) 2012-05-30
WO2011030238A1 (en) 2011-03-17

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