JP2023156333A5 - - Google Patents

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Publication number
JP2023156333A5
JP2023156333A5 JP2023119193A JP2023119193A JP2023156333A5 JP 2023156333 A5 JP2023156333 A5 JP 2023156333A5 JP 2023119193 A JP2023119193 A JP 2023119193A JP 2023119193 A JP2023119193 A JP 2023119193A JP 2023156333 A5 JP2023156333 A5 JP 2023156333A5
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Japan
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substrate
power
electrode
substrate support
processing chamber
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JP2023119193A
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JP2023156333A (ja
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Priority claimed from PCT/US2018/056004 external-priority patent/WO2019212592A1/en
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Publication of JP2023156333A publication Critical patent/JP2023156333A/ja
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JP2023119193A 2018-05-03 2023-07-21 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着 Pending JP2023156333A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862666205P 2018-05-03 2018-05-03
US62/666,205 2018-05-03
PCT/US2018/056004 WO2019212592A1 (en) 2018-05-03 2018-10-16 Pulsed plasma (dc/rf) deposition of high quality c films for patterning
JP2020561008A JP7591929B2 (ja) 2018-05-03 2018-10-16 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着

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JP2020561008A Division JP7591929B2 (ja) 2018-05-03 2018-10-16 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着

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JP2023156333A JP2023156333A (ja) 2023-10-24
JP2023156333A5 true JP2023156333A5 (https=) 2025-04-04

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JP2020561008A Active JP7591929B2 (ja) 2018-05-03 2018-10-16 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着
JP2023119193A Pending JP2023156333A (ja) 2018-05-03 2023-07-21 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着

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Country Status (6)

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US (2) US11603591B2 (https=)
JP (2) JP7591929B2 (https=)
KR (2) KR20200140388A (https=)
CN (2) CN120485731A (https=)
SG (1) SG11202009289PA (https=)
WO (1) WO2019212592A1 (https=)

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