KR20200140388A - 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 - Google Patents

패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 Download PDF

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KR20200140388A
KR20200140388A KR1020207034601A KR20207034601A KR20200140388A KR 20200140388 A KR20200140388 A KR 20200140388A KR 1020207034601 A KR1020207034601 A KR 1020207034601A KR 20207034601 A KR20207034601 A KR 20207034601A KR 20200140388 A KR20200140388 A KR 20200140388A
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substrate
processing
power
amorphous carbon
electrode
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에스와라난드 벤카타수브라마니안
양 양
프라밋 만나
카르틱 라마스와미
타케히토 코시자와
아비짓 바수 말릭
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어플라이드 머티어리얼스, 인코포레이티드
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Priority to KR1020247020744A priority Critical patent/KR20240097984A/ko
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
KR1020207034601A 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 Ceased KR20200140388A (ko)

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Application Number Priority Date Filing Date Title
KR1020247020744A KR20240097984A (ko) 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착

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Application Number Priority Date Filing Date Title
US201862666205P 2018-05-03 2018-05-03
US62/666,205 2018-05-03
PCT/US2018/056004 WO2019212592A1 (en) 2018-05-03 2018-10-16 Pulsed plasma (dc/rf) deposition of high quality c films for patterning

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KR1020247020744A Division KR20240097984A (ko) 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착

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KR1020207034601A Ceased KR20200140388A (ko) 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착
KR1020247020744A Pending KR20240097984A (ko) 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착

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US (2) US11603591B2 (https=)
JP (2) JP7591929B2 (https=)
KR (2) KR20200140388A (https=)
CN (2) CN120485731A (https=)
SG (1) SG11202009289PA (https=)
WO (1) WO2019212592A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022132642A1 (en) * 2020-12-18 2022-06-23 Lam Research Corporation High selectivity, low stress, and low hydrogen carbon hardmasks in low-pressure conditions with wide gap electrode spacing
US11837441B2 (en) 2019-05-29 2023-12-05 Lam Research Corporation Depositing a carbon hardmask by high power pulsed low frequency RF
US12435412B2 (en) 2019-08-30 2025-10-07 Lam Research Corporation High density, modulus, and hardness amorphous carbon films at low pressure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11469097B2 (en) 2018-04-09 2022-10-11 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
CN110983300B (zh) * 2019-12-04 2023-06-20 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其应用
US11773484B2 (en) 2020-06-26 2023-10-03 Tokyo Electron Limited Hard mask deposition using direct current superimposed radio frequency plasma
EP3945669A1 (en) 2020-07-27 2022-02-02 TRUMPF Huettinger Sp. Z o. o. Hv switch unit, pulsing assembly and method of avoiding voltage imbalances in an hv switch
EP3945541A1 (en) 2020-07-29 2022-02-02 TRUMPF Huettinger Sp. Z o. o. Pulsing assembly, power supply arrangement and method using the assembly
EP3952083A1 (en) 2020-08-06 2022-02-09 TRUMPF Huettinger Sp. Z o. o. Hv switch unit
US11404263B2 (en) * 2020-08-07 2022-08-02 Applied Materials, Inc. Deposition of low-stress carbon-containing layers
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