CN120485731A - 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积 - Google Patents

用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积

Info

Publication number
CN120485731A
CN120485731A CN202510649232.8A CN202510649232A CN120485731A CN 120485731 A CN120485731 A CN 120485731A CN 202510649232 A CN202510649232 A CN 202510649232A CN 120485731 A CN120485731 A CN 120485731A
Authority
CN
China
Prior art keywords
carbon
silicon
layer
amorphous carbon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510649232.8A
Other languages
English (en)
Chinese (zh)
Inventor
E·文卡塔苏布磊曼聂
杨扬
P·曼纳
K·拉马斯瓦米
T·越泽
A·B·玛里克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN120485731A publication Critical patent/CN120485731A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN202510649232.8A 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积 Pending CN120485731A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862666205P 2018-05-03 2018-05-03
US62/666,205 2018-05-03
PCT/US2018/056004 WO2019212592A1 (en) 2018-05-03 2018-10-16 Pulsed plasma (dc/rf) deposition of high quality c films for patterning
CN201880092808.3A CN112041481B (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201880092808.3A Division CN112041481B (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积

Publications (1)

Publication Number Publication Date
CN120485731A true CN120485731A (zh) 2025-08-15

Family

ID=68386699

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202510649232.8A Pending CN120485731A (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积
CN201880092808.3A Active CN112041481B (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201880092808.3A Active CN112041481B (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积

Country Status (6)

Country Link
US (2) US11603591B2 (https=)
JP (2) JP7591929B2 (https=)
KR (2) KR20200140388A (https=)
CN (2) CN120485731A (https=)
SG (1) SG11202009289PA (https=)
WO (1) WO2019212592A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11469097B2 (en) 2018-04-09 2022-10-11 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
CN113891954B (zh) 2019-05-29 2025-09-19 朗姆研究公司 通过高功率脉冲低频率rf产生的高选择性、低应力、且低氢的类金刚石碳硬掩模
CN114342043A (zh) 2019-08-30 2022-04-12 朗姆研究公司 低压下的高密度、模量和硬度的非晶碳膜
CN110983300B (zh) * 2019-12-04 2023-06-20 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其应用
US11773484B2 (en) 2020-06-26 2023-10-03 Tokyo Electron Limited Hard mask deposition using direct current superimposed radio frequency plasma
EP3945669A1 (en) 2020-07-27 2022-02-02 TRUMPF Huettinger Sp. Z o. o. Hv switch unit, pulsing assembly and method of avoiding voltage imbalances in an hv switch
EP3945541A1 (en) 2020-07-29 2022-02-02 TRUMPF Huettinger Sp. Z o. o. Pulsing assembly, power supply arrangement and method using the assembly
EP3952083A1 (en) 2020-08-06 2022-02-09 TRUMPF Huettinger Sp. Z o. o. Hv switch unit
US11404263B2 (en) * 2020-08-07 2022-08-02 Applied Materials, Inc. Deposition of low-stress carbon-containing layers
US12142459B2 (en) * 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
JP2024500671A (ja) * 2020-12-18 2024-01-10 ラム リサーチ コーポレーション 広いギャップ電極間隔の低圧条件における、高選択性、低応力、および低水素の炭素ハードマスク
JP2022187397A (ja) * 2021-06-07 2022-12-19 東京エレクトロン株式会社 成膜方法および成膜装置
WO2023196846A1 (en) * 2022-04-07 2023-10-12 Lam Research Corporation Hydrogen reduction in amorphous carbon films
KR102939653B1 (ko) 2022-12-09 2026-03-13 성균관대학교산학협력단 고 종횡 비 반도체 구조물의 갭을 채우기 위한 다중 펄스를 이용한 원자층 증착 장치 및 이를 이용한 원자층 증착방법

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62116751A (ja) * 1985-11-13 1987-05-28 Nec Corp 硬質非晶質炭素膜
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
MY132894A (en) 1997-08-25 2007-10-31 Ibm Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof
US6682786B1 (en) * 1999-12-07 2004-01-27 Ibm Corporation Liquid crystal display cell having liquid crystal molecules in vertical or substantially vertical alignment
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
JP4158550B2 (ja) 2003-02-18 2008-10-01 日本ゼオン株式会社 積層体
JP4725085B2 (ja) * 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
US7384693B2 (en) * 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
ATE343220T1 (de) * 2004-05-28 2006-11-15 Applied Films Gmbh & Co Kg Antriebsmechanismus für eine vakuum- behandlungsanlage
WO2006057436A1 (en) * 2004-11-25 2006-06-01 Kabushiki Kaisha Toyota Chuo Kenkyusho Amorphous carbon film, process for forming the same, and high wear-resistant sliding member with amorphous carbon film provided
JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US20060130971A1 (en) * 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
JP2006294909A (ja) * 2005-04-12 2006-10-26 Sharp Corp 半導体装置の製造方法
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
JP4602171B2 (ja) 2005-06-22 2010-12-22 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム、及びコンピュータ記憶媒体
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
JP4507120B2 (ja) * 2005-11-11 2010-07-21 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
KR100827528B1 (ko) * 2006-01-11 2008-05-06 주식회사 하이닉스반도체 ｓｐ3 분율이 높은 비정질 탄소를 하드마스크로 이용하는반도체 소자의 제조방법
US8119242B2 (en) * 2006-05-22 2012-02-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Amorphous carbon film, process for forming amorphous carbon film, conductive member provided with amorphous carbon film, and fuel cell separator
US20080153311A1 (en) * 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US7867578B2 (en) * 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US8083961B2 (en) * 2006-07-31 2011-12-27 Tokyo Electron Limited Method and system for controlling the uniformity of a ballistic electron beam by RF modulation
JP5154140B2 (ja) * 2006-12-28 2013-02-27 東京エレクトロン株式会社 半導体装置およびその製造方法
JP5425404B2 (ja) * 2008-01-18 2014-02-26 東京エレクトロン株式会社 アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法
US8133819B2 (en) 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
JP4704453B2 (ja) 2008-07-16 2011-06-15 株式会社プラズマイオンアシスト ダイヤモンドライクカーボン製造装置、製造方法及び工業製品
US20100189923A1 (en) * 2009-01-29 2010-07-29 Asm Japan K.K. Method of forming hardmask by plasma cvd
US8999604B2 (en) * 2009-12-25 2015-04-07 Kabushiki Kaisha Toyota Chuo Kenkyusho Oriented amorphous carbon film and process for forming the same
JP5780704B2 (ja) * 2010-01-19 2015-09-16 株式会社リケン 水素含有非晶質硬質炭素被覆部材
CN101789362B (zh) * 2010-02-05 2011-10-05 中微半导体设备(上海)有限公司 一种等离子体处理装置及其处理方法
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
WO2011137059A2 (en) * 2010-04-30 2011-11-03 Applied Materials, Inc. Amorphous carbon deposition method for improved stack defectivity
US8361906B2 (en) * 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
JP2012014780A (ja) 2010-06-30 2012-01-19 Ulvac Japan Ltd 磁気記録媒体の製造方法
JP5649510B2 (ja) * 2010-08-19 2015-01-07 キヤノンアネルバ株式会社 プラズマ処理装置，成膜方法，ｄｌｃ皮膜を有する金属板の製造方法，セパレータの製造方法
TW201216331A (en) 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US8491759B2 (en) * 2010-10-20 2013-07-23 COMET Technologies USA, Inc. RF impedance matching network with secondary frequency and sub-harmonic variant
DE102010060762B4 (de) * 2010-11-24 2019-05-23 Meyer Burger (Germany) Gmbh Plasmabearbeitungsvorrichtung
US20120164834A1 (en) * 2010-12-22 2012-06-28 Kevin Jennings Variable-Density Plasma Processing of Semiconductor Substrates
JP2012222175A (ja) * 2011-04-11 2012-11-12 Ngk Insulators Ltd プラズマｃｖｄ装置及びアモルファス膜の形成方法
KR20120121340A (ko) 2011-04-26 2012-11-05 삼성전자주식회사 유도결합 플라즈마를 이용한 탄소계 하드 마스크막 제조 방법 및 이를 이용한 패턴 형성 방법
US8399366B1 (en) * 2011-08-25 2013-03-19 Tokyo Electron Limited Method of depositing highly conformal amorphous carbon films over raised features
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US20130189845A1 (en) * 2012-01-19 2013-07-25 Applied Materials, Inc. Conformal amorphous carbon for spacer and spacer protection applications
US8679987B2 (en) * 2012-05-10 2014-03-25 Applied Materials, Inc. Deposition of an amorphous carbon layer with high film density and high etch selectivity
JP2014077164A (ja) * 2012-10-10 2014-05-01 Tocalo Co Ltd パターン形成部材、及びパターン形成方法
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US20140273461A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Carbon film hardmask stress reduction by hydrogen ion implantation
US20150371851A1 (en) 2013-03-15 2015-12-24 Applied Materials, Inc. Amorphous carbon deposition process using dual rf bias frequency applications
US9390923B2 (en) * 2014-07-03 2016-07-12 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process
US9390910B2 (en) * 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
US9490116B2 (en) 2015-01-09 2016-11-08 Applied Materials, Inc. Gate stack materials for semiconductor applications for lithographic overlay improvement
EP3059330A1 (en) * 2015-02-23 2016-08-24 Toto Ltd. Wet area member
US10246772B2 (en) * 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
US9865459B2 (en) * 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
US10418243B2 (en) 2015-10-09 2019-09-17 Applied Materials, Inc. Ultra-high modulus and etch selectivity boron-carbon hardmask films
US10249495B2 (en) 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
US10858727B2 (en) * 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
US10570506B2 (en) * 2017-01-24 2020-02-25 Applied Materials, Inc. Method to improve film quality for PVD carbon with reactive gas and bias power
WO2018226370A1 (en) 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications
US11043375B2 (en) 2017-08-16 2021-06-22 Applied Materials, Inc. Plasma deposition of carbon hardmask
US11469097B2 (en) * 2018-04-09 2022-10-11 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto

Also Published As

Publication number Publication date
KR20240097984A (ko) 2024-06-27
JP7591929B2 (ja) 2024-11-29
US12486577B2 (en) 2025-12-02
JP2021523558A (ja) 2021-09-02
US20210040618A1 (en) 2021-02-11
CN112041481A (zh) 2020-12-04
WO2019212592A1 (en) 2019-11-07
KR20200140388A (ko) 2020-12-15
SG11202009289PA (en) 2020-11-27
JP2023156333A (ja) 2023-10-24
US11603591B2 (en) 2023-03-14
US20230220551A1 (en) 2023-07-13
CN112041481B (zh) 2025-06-06

Similar Documents

Publication Publication Date Title
CN112041481B (zh) 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积
JP7407121B2 (ja) パターニング用途のためのカーボンハードマスク及び関連方法
KR102460795B1 (ko) 낮은 종횡비 적층물의 패터닝을 위한 방법 및 시스템
US10818507B2 (en) Method of etching silicon nitride layers for the manufacture of microelectronic workpieces
TW201806029A (zh) 使用氫電漿之矽提取方法
US20220319841A1 (en) Deposition of low-stress carbon-containing layers
US20230343598A1 (en) Method For Improving Etch Rate And Critical Dimension Uniformity When Etching High Aspect Ratio Features Within A Hard Mask Layer
US11495454B2 (en) Deposition of low-stress boron-containing layers
US11810792B2 (en) Etching method and substrate processing apparatus
US20240282585A1 (en) Treatments to improve etched silicon-and-germanium-containing material surface roughness
CN112041480A (zh) 解决在高温非晶碳沉积的厚膜沉积期间的自发电弧
CN116568857A (zh) 形成硬模的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination