WO2019212592A1 - Pulsed plasma (dc/rf) deposition of high quality c films for patterning - Google Patents

Pulsed plasma (dc/rf) deposition of high quality c films for patterning Download PDF

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Publication number
WO2019212592A1
WO2019212592A1 PCT/US2018/056004 US2018056004W WO2019212592A1 WO 2019212592 A1 WO2019212592 A1 WO 2019212592A1 US 2018056004 W US2018056004 W US 2018056004W WO 2019212592 A1 WO2019212592 A1 WO 2019212592A1
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WIPO (PCT)
Prior art keywords
substrate
power
amorphous carbon
electrode
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2018/056004
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English (en)
French (fr)
Inventor
Eswaranand VENKATASUBRAMANIAN
Yang Yang
Pramit MANNA
Kartik Ramaswamy
Takehito Koshizawa
Abhijit Basu Mallick
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to KR1020247020744A priority Critical patent/KR20240097984A/ko
Priority to KR1020207034601A priority patent/KR20200140388A/ko
Priority to CN201880092808.3A priority patent/CN112041481B/zh
Priority to SG11202009289PA priority patent/SG11202009289PA/en
Priority to CN202510649232.8A priority patent/CN120485731A/zh
Priority to JP2020561008A priority patent/JP7591929B2/ja
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US16/982,955 priority patent/US11603591B2/en
Publication of WO2019212592A1 publication Critical patent/WO2019212592A1/en
Anticipated expiration legal-status Critical
Priority to US18/119,406 priority patent/US12486577B2/en
Priority to JP2023119193A priority patent/JP2023156333A/ja
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
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    • H10P72/04—Apparatus for manufacture or treatment
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    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

Definitions

  • Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process.
  • PECVD plasma-enhanced chemical vapor deposition
  • Carbon hardmasks formed of amorphous carbon are used in semiconductor device manufacturing as an etching mask in forming high aspect ratio openings (e.g., a height to width ratio of 2:1 or more) in a substrate surface or in a material surface layer thereof.
  • high aspect ratio openings e.g., a height to width ratio of 2:1 or more
  • processing issues related to forming high aspect ratio openings including clogging, hole-shape distortion, pattern deformation, top critical dimension blow up, line bending, and profile bowing are a result of undesirable material properties of conventionally deposited carbon hardmasks.
  • carbon hardmasks having one or both of lower material density and lower material rigidity are known to cause increased deformation of high aspect ratio openings when compared to hardmask materials having a higher density or higher rigidity.
  • a method of processing a substrate includes positioning a substrate on a substrate support disposed in a process volume of a process chamber. The method further includes flowing a process gas comprising a hydrocarbon gas and a diluent gas into the process volume. The method further includes maintaining the process volume at a pressure less than about 100 mTorr. The method further includes forming a plasma of the process gas by applying a first power to a first electrode of the process chamber and applying a second power to a second electrode of the process chamber, wherein the second power is a pulsed DC power. The method further includes maintaining the substrate support at a temperature less than about 350 °C. The method further includes exposing a surface of the substrate to the plasma. The method further includes depositing an amorphous carbon layer on the surface of the substrate.
  • a method of processing a substrate includes positioning a substrate on a substrate support disposed in a process volume of a process chamber. The method further includes flowing a process gas comprising a hydrocarbon gas and a diluent gas into the process volume. The method further includes maintaining the process volume at a pressure less than about 20 mTorr.
  • the method further includes forming a plasma of the process gas by applying an RF AC power to a first electrode of the process chamber, wherein the RF AC power is between about 500 W and 5 kW, with a frequency between about 350 kHz and about 100 MHz and applying a pulsed DC power to a second electrode of the process chamber, wherein the pulsed DC power is between about 200 W and about 15 kW pulsed at a frequency of about 1 kHz.
  • the method further includes maintaining the substrate support at a temperature less than about 100 °C.
  • the method further includes exposing a surface of the substrate to the plasma.
  • the method further includes depositing an amorphous carbon layer on the surface of the substrate.
  • a carbon hardmask in another embodiment, includes an amorphous carbon layer disposed on a surface of a substrate.
  • the amorphous carbon layer has a density of more than about 1.8 g/cm 3 , a Young’s modulus of more than about 150 GPa, and a film stress of less than about 500 Pa.
  • Figure 1 illustrates a schematic cross-sectional view of an exemplary processing chamber used to practice the methods set forth herein, according to one embodiment.
  • FIG. 2 illustrates a flow diagram of a method of depositing an amorphous carbon layer, according to one embodiment.
  • Figure 3 illustrates a carbon hardmask formed of an amorphous carbon layer deposited according to the method set forth in Figure 2, according to one embodiment.
  • Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process.
  • PECVD plasma-enhanced chemical vapor deposition
  • the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon.
  • the methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer.
  • the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.
  • FIG. 1 is a schematic cross sectional view of an exemplary processing chamber 100 used to practice the methods set forth herein, according to one embodiment.
  • Other exemplary processing chambers that may be used to practice the methods describe herein include RADION l i 1 , PRODUCER ® , and SYM3TM processing apparatus available from Applied Materials, Inc., of Santa Clara, California as well as suitable deposition chambers from other manufacturers.
  • the processing chamber 100 includes a lid assembly 101 , sidewalls 102, and a chamber base 104
  • the lid assembly 101 includes a chamber lid 106, a showerhead 107 coupled to the chamber lid 106 and in electrical communication therewith, and an electrically insulating ring 108 disposed between the chamber lid 106 and the sidewalls 102.
  • the showerhead 107, the sidewalls 102, and the chamber base 104 together define a processing volume 105.
  • the chamber lid 106 and the showerhead 107 are formed from an electrically conductively material such as aluminum.
  • a gas inlet 109 is disposed through the chamber lid 106 and fluidly coupled to a gas source 110.
  • the showerhead 107 having a plurality of openings 111 disposed therethrough, is used to uniformly distribute processing gases from the gas source 110 into the processing volume 105.
  • the processing chamber 100 does not include a showerhead 107, and processing gases are delivered to the processing volume 105 through one or more gas inlets disposed through the chamber lid 106 or the sidewalls 102.
  • the processing volume 105 Is fluidly coupled to a vacuum source 112, which may be one or more dedicated vacuum pumps, through a vacuum outlet 114, which maintains the processing voiume 105 at sub-atmospheric conditions and evacuates the processing gas and other gases therefrom during processing.
  • a substrate support 115 disposed in the processing voiume 105, is disposed on a movable support shaft 118 extending through the chamber base 104.
  • the processing chamber 100 is configured to facilitate transferring of a substrate 117 to and from the substrate support 115 through an opening 118 in one of the one or more sidewalls 102, which is sealed with a door or a valve (not shown) during substrate processing.
  • the substrate 117 is maintained at a desired processing temperature using one or both of a heater 119 and one or more cooling channels 120.
  • the heater 119 which may be a resistive heater, and the one or more cooling channels are disposed in the substrate support 115.
  • the one or more cooling channels 120 are fluidly coupled to a coolant source (not shown), such as a refrigerant source or a modified water source having relatively high electrical resistance.
  • the heater 119 is in electrical communication with a power source (not shown) which is configured to power the heater 119 and elevate a temperature of the substrate support 115.
  • one or more electrodes 124 are embedded in a dielectric material of the substrate support 115.
  • the one or more electrodes are electrically coupled to a power supply 121.
  • a power supply 122 is electrically coupled to the showerhead 107.
  • the power supply 122 is electrically coupled to the lid assembly 106.
  • Each of the power supplies 121 and 122 may be a continuous wave (CW) RF power supply, a pulsed RF power supply, a DC power supply, and/or a pulsed DC power supply.
  • the power supply 121 is a CW RF power supply
  • the power supply 122 is a pulsed DC power supply.
  • the power supply 121 is a pulsed DC power supply
  • the power supply 122 is a pulsed RF power supply. While only two power supplies 121 and 122 are shown, it is contemplated that more power supplies may be coupled to electrodes In either the substrate support 115 or the lid assembly 101 as needed. For instance, pulsed DC power supplies may be coupled to electrodes in both the substrate support 115 and the lid assembly 101 , along with an RF supply coupled to electrodes in the lid assembly 101.
  • a plasma 123 is formed and maintained in the processing volume 105 by providing RF power from the power supply 122 to one or more electrodes in the lid assembly 101 , thereby creating a capacitiveiy coupled plasma 123.
  • the plasma 123 is then modified by providing DC power from the power supply 121 to one or more electrodes disposed in the substrate support 115.
  • the plasma 123 is formed and maintained by RF power from the power supply 121 and modified by DC power from the power supply 122.
  • FIG. 2 is a flow diagram of a method 200 of depositing an amorphous carbon layer on a surface of a substrate, according to one embodiment.
  • the method 200 includes positioning a substrate on a substrate support.
  • the substrate support is disposed in a processing volume of a processing chamber, such as the processing chamber 100 described in Figure 1.
  • the method 200 includes flowing a processing gas into the processing volume.
  • the processing gas includes a carbon source gas, such as a hydrocarbon gas, for example CH 4 , C 2 H 2 , C 3 H S , C 4 H 10 , C 2 H 4 , C 3 H 6 , C H 8 , C 5 H 10 , or combinations thereof and the processing gas also includes a diluent gas, for example an inert gas such as Ar, He, Ne, Kr, Xe, or combinations thereof.
  • the diluent gas includes inert gases, such as a noble gases, N 2 , H 2 , or combinations thereof.
  • a ratio of the flowrate of the hydrocarbon gas to the flowrate of the diluent gas is between about 1 :10 and about 10:1 , such as between about 1 :5 and about 5:1.
  • a ratio of a flowrate of C 2 H 2 to a flowrate of He is between about 1 :3 and about 3:1.
  • the diluent gas includes H 2 and a ratio of the flowrate of H 2 to the flowrate of hydrocarbon gas is between about 0.5:1 and about 1 :10, such as between about 1 :1 and about 1 :5.
  • the method 200 includes maintaining the processing volume at a processing pressure between about 0.1 mTorr and about 100 mTorr, such as between about 0.1 mTorr and about 50 mTorr, or between about 0.1 mTorr and about 30 mTorr, or between about 0.1 mTorr and about 20 mTorr, or between about 0.1 mTorr and about 15 mTorr, or between about 0.1 mTorr and about 10 mTorr, or less than about 100 mTorr, or less than about 50 mTorr, or less than about 20 mTorr, or less than about 15 mTorr, or less than about 10 mTorr.
  • a processing pressure between about 0.1 mTorr and about 100 mTorr, such as between about 0.1 mTorr and about 50 mTorr, or between about 0.1 mTorr and about 30 mTorr, or between about 0.1 mTor
  • the method 200 includes forming and maintaining a plasma of the processing gas by applying a first power to a first electrode of the processing chamber and applying a second power to a second electrode of the processing chamber, wherein the second power is a pulsed DC power in one embodiment, the first electrode is disposed in the substrate support. In another embodiment, the first electrode is disposed opposite the substrate support, such as in a showerhead or chamber lid of the processing chamber. In one embodiment, the first power is an RF AC power between about 500 W and about 5 kW, such as about 2500 W. The first power has a frequency between about 350 kHz and about 100 MHz, such as 2 MHz or 13.56 MHz.
  • the second electrode is disposed in the substrate support. In another embodiment, the second electrode is disposed opposite the substrate support in one embodiment the second electrode is a showerhead. in one embodiment, the second power is between about 200 W and about 15 kW In another embodiment, the second power is pulsed at a frequency of about 1 kHz. In another embodiment, the second power has a duty cycle of about 50%.
  • a pulsed DC power from the substrate support results in greater uniformity of ion energies within the plasma, which in turn leads to a higher concentration of sp3 carbon in the deposited amorphous carbon layer.
  • amorphous carbon layers with higher sp3 concentrations demonstrate desirable properties such as higher density, higher Young’s modulus, and lower film stress as compared to conventionally-deposited amorphous carbon layers
  • providing a pulsed DC power opposite the substrate support, e.g., to a second electrode such as a showerhead, as described above results in increased secondary electron emission from the second electrode, which can further reduce the film stress of the deposited amorphous carbon layer
  • the method 200 includes maintaining the substrate support, and thus the substrate disposed thereon, at a temperature between about -50 °C and about 350 °C, such as between about -50 °C and about 150 °G, between about -50 °C and about 100 °C, between about -50 °C and about 50 °C, between about -25 °C and about 25 °C, or a temperature less than about 350 °C, such as less than about 200 °G, less than about 150 °C, less than 100 °C, or less than about 50 °G.
  • the method 200 includes exposing a surface of the substrate to the plasma.
  • the method 200 includes depositing an amorphous carbon layer on the surface of the substrate.
  • Figure 2 illustrates one example of a flow diagram
  • operation 205 may occur prior to operation 202, 203, or 204.
  • one or more of operations 202-207 may occur concurrently.
  • Figure 3 illustrates a carbon hardmask 303 deposited according to the method set forth in Figure 2, according to one embodiment.
  • the carbon hardmask 303 shown as a patterned carbon hardmask, includes an amorphous carbon layer 302, having a plurality of openings 304 formed therein, disposed on a to-be- patterned surface of a substrate 301.
  • the substrate 301 or one or more material layers thereof are formed of one or a combination of crystalline silicon, silicon oxide, silicon oxynitride, silicon nitride, strained silicon, silicon germanium, tungsten, titanium nitride, doped or undoped poiysilicon, carbon doped silicon oxides, silicon nitrides, doped silicon, germanium, gallium arsenide, glass, sapphire, and low k dielectric materials.
  • the amorphous carbon layer 302 has a thickness between about 1 kA and about 40 kA, such as between about 10 kA and about 40 kA or between about 10 kA and about 30 kA, a density of more than about 1.8 g/cm 3 , and a Young’s modulus of more than about 150 GPa.
  • the amorphous carbon layer 302 has a tensile or compressive film stress of less than about 500 MPa
  • each of the openings 304 have an aspect ratio (i.e., a ratio of height 306 to width 305) of more than about 2:1 , such as more than about 3:1 , more than about 4:1 , more than about 5:1 , more than about 6:1 , more than about 7:1 , more than about 8:1 , more than about 9:1 , or more than about 10:1.
  • the methods described herein and the amorphous carbon layers deposited according to such methods exhibit desirable properties for carbon hardmask applications.
  • the deposited amorphous carbon layers exhibit a high ratio of sp3 (diamond-iike) carbon to sp2 (graphite-like) carbon.
  • the methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer.
  • the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

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KR1020207034601A KR20200140388A (ko) 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착
CN201880092808.3A CN112041481B (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积
SG11202009289PA SG11202009289PA (en) 2018-05-03 2018-10-16 Pulsed plasma (dc/rf) deposition of high quality c films for patterning
CN202510649232.8A CN120485731A (zh) 2018-05-03 2018-10-16 用于进行图案化的高品质c膜的脉冲等离子体(dc/rf)沉积
JP2020561008A JP7591929B2 (ja) 2018-05-03 2018-10-16 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着
KR1020247020744A KR20240097984A (ko) 2018-05-03 2018-10-16 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착
US16/982,955 US11603591B2 (en) 2018-05-03 2018-10-16 Pulsed plasma (DC/RF) deposition of high quality C films for patterning
US18/119,406 US12486577B2 (en) 2018-05-03 2023-03-09 Pulsed plasma (DC/RF) deposition of high quality C films for patterning
JP2023119193A JP2023156333A (ja) 2018-05-03 2023-07-21 パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着

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JP2023541831A (ja) * 2020-09-08 2023-10-04 アプライド マテリアルズ インコーポレイテッド 単一のチャンバ流動性膜の形成及び処理
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WO2022259861A1 (ja) * 2021-06-07 2022-12-15 東京エレクトロン株式会社 成膜方法および成膜装置

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