JP2022505395A5 - - Google Patents

Info

Publication number
JP2022505395A5
JP2022505395A5 JP2021521399A JP2021521399A JP2022505395A5 JP 2022505395 A5 JP2022505395 A5 JP 2022505395A5 JP 2021521399 A JP2021521399 A JP 2021521399A JP 2021521399 A JP2021521399 A JP 2021521399A JP 2022505395 A5 JP2022505395 A5 JP 2022505395A5
Authority
JP
Japan
Prior art keywords
approximately
bias
watts
substrate
mhz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021521399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022505395A (ja
JP7462626B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/054812 external-priority patent/WO2020086241A1/en
Publication of JP2022505395A publication Critical patent/JP2022505395A/ja
Publication of JP2022505395A5 publication Critical patent/JP2022505395A5/ja
Priority to JP2024049050A priority Critical patent/JP7778835B2/ja
Application granted granted Critical
Publication of JP7462626B2 publication Critical patent/JP7462626B2/ja
Priority to JP2025145127A priority patent/JP2026000945A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021521399A 2018-10-26 2019-10-04 パターニング応用のための高密度炭素膜 Active JP7462626B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024049050A JP7778835B2 (ja) 2018-10-26 2024-03-26 パターニング応用のための高密度炭素膜
JP2025145127A JP2026000945A (ja) 2018-10-26 2025-09-02 パターニング応用のための高密度炭素膜

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862751213P 2018-10-26 2018-10-26
US62/751,213 2018-10-26
PCT/US2019/054812 WO2020086241A1 (en) 2018-10-26 2019-10-04 High density carbon films for patterning applications

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024049050A Division JP7778835B2 (ja) 2018-10-26 2024-03-26 パターニング応用のための高密度炭素膜

Publications (3)

Publication Number Publication Date
JP2022505395A JP2022505395A (ja) 2022-01-14
JP2022505395A5 true JP2022505395A5 (https=) 2022-10-13
JP7462626B2 JP7462626B2 (ja) 2024-04-05

Family

ID=70327222

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021521399A Active JP7462626B2 (ja) 2018-10-26 2019-10-04 パターニング応用のための高密度炭素膜
JP2024049050A Active JP7778835B2 (ja) 2018-10-26 2024-03-26 パターニング応用のための高密度炭素膜
JP2025145127A Pending JP2026000945A (ja) 2018-10-26 2025-09-02 パターニング応用のための高密度炭素膜

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024049050A Active JP7778835B2 (ja) 2018-10-26 2024-03-26 パターニング応用のための高密度炭素膜
JP2025145127A Pending JP2026000945A (ja) 2018-10-26 2025-09-02 パターニング応用のための高密度炭素膜

Country Status (7)

Country Link
US (2) US11842897B2 (https=)
JP (3) JP7462626B2 (https=)
KR (2) KR102758013B1 (https=)
CN (2) CN120854258A (https=)
SG (1) SG11202101496WA (https=)
TW (2) TWI827705B (https=)
WO (1) WO2020086241A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11202101496WA (en) * 2018-10-26 2021-05-28 Applied Materials Inc High density carbon films for patterning applications
WO2022005700A1 (en) * 2020-06-29 2022-01-06 Applied Materials, Inc. Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US11421324B2 (en) * 2020-10-21 2022-08-23 Applied Materials, Inc. Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition
US11694902B2 (en) * 2021-02-18 2023-07-04 Applied Materials, Inc. Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers
JP7841233B2 (ja) * 2021-10-26 2026-04-07 東京エレクトロン株式会社 基板に炭素含有膜を成膜する装置、及び方法
TWI773628B (zh) * 2022-01-19 2022-08-01 華邦電子股份有限公司 半導體結構及其形成方法
US20250376761A1 (en) * 2024-06-07 2025-12-11 Applied Materials, Inc. Method for forming high density carbon films with reduced substrate backside damage

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316795A (en) * 1990-05-24 1994-05-31 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
MY132894A (en) 1997-08-25 2007-10-31 Ibm Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof
US6332961B1 (en) * 1997-09-17 2001-12-25 Tokyo Electron Limited Device and method for detecting and preventing arcing in RF plasma systems
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US7004107B1 (en) 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6291334B1 (en) * 1997-12-19 2001-09-18 Applied Materials, Inc. Etch stop layer for dual damascene process
TW495553B (en) 1999-08-27 2002-07-21 Surftech Corp Method for preparing diamond-like carbon film by cathode arc evaporation (CAE)
US6596465B1 (en) * 1999-10-08 2003-07-22 Motorola, Inc. Method of manufacturing a semiconductor component
US20030107865A1 (en) * 2000-12-11 2003-06-12 Shinsuke Masuda Wafer handling apparatus and method of manufacturing the same
WO2002081771A2 (en) * 2001-04-05 2002-10-17 Angstron Systems, Inc. Atomic layer deposition system and method
US20050130620A1 (en) * 2003-12-16 2005-06-16 Andreas Fischer Segmented radio frequency electrode apparatus and method for uniformity control
US20070031609A1 (en) * 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
US20100211180A1 (en) * 2006-03-21 2010-08-19 Jet Engineering, Inc. Tetrahedral Amorphous Carbon Coated Medical Devices
KR100867123B1 (ko) 2007-04-03 2008-11-06 삼성전자주식회사 반도체소자의 식각방법
US20090029067A1 (en) * 2007-06-28 2009-01-29 Sciamanna Steven F Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
US8962101B2 (en) * 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US8133819B2 (en) 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
US20090246243A1 (en) * 2008-03-25 2009-10-01 La Corporation De I'ecole Polytechnique Carbonaceous Protective Multifunctional Coatings
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
JP5960384B2 (ja) * 2009-10-26 2016-08-02 新光電気工業株式会社 静電チャック用基板及び静電チャック
JP2011162830A (ja) 2010-02-09 2011-08-25 Fuji Electric Co Ltd プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
US8361906B2 (en) 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
KR20120121340A (ko) 2011-04-26 2012-11-05 삼성전자주식회사 유도결합 플라즈마를 이용한 탄소계 하드 마스크막 제조 방법 및 이를 이용한 패턴 형성 방법
US20120276743A1 (en) 2011-04-26 2012-11-01 Jai-Hyung Won Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same
TW201309836A (zh) 2011-08-24 2013-03-01 Ritedia Corp 似鑽碳膜及其製備方法
US8679987B2 (en) * 2012-05-10 2014-03-25 Applied Materials, Inc. Deposition of an amorphous carbon layer with high film density and high etch selectivity
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
JP2014154866A (ja) * 2013-02-14 2014-08-25 Fujifilm Corp ドライエッチング装置及びドライエッチング装置用のクランプ
US20150371851A1 (en) 2013-03-15 2015-12-24 Applied Materials, Inc. Amorphous carbon deposition process using dual rf bias frequency applications
EP3056069A4 (en) * 2013-10-07 2017-06-21 Aeonclad Coatings, LLC Low-cost plasma reactor
US20150200094A1 (en) * 2014-01-10 2015-07-16 Applied Materials, Inc. Carbon film stress relaxation
US20150333213A1 (en) * 2014-05-19 2015-11-19 Applied Materials, Inc. Diamond-like carbon coatings for substrate carriers
US20170117174A1 (en) * 2014-06-17 2017-04-27 Evatec Ag Electro-static chuck with radiofrequency shunt
US10418243B2 (en) * 2015-10-09 2019-09-17 Applied Materials, Inc. Ultra-high modulus and etch selectivity boron-carbon hardmask films
US12217949B2 (en) * 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US10249495B2 (en) 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
WO2018022142A1 (en) * 2016-07-29 2018-02-01 Applied Materials, Inc. Performing decoupled plasma fluorination to reduce interfacial defects in film stack
US20180277340A1 (en) * 2017-03-24 2018-09-27 Yang Yang Plasma reactor with electron beam of secondary electrons
US10544505B2 (en) * 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor
WO2018226370A1 (en) 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications
US11043375B2 (en) 2017-08-16 2021-06-22 Applied Materials, Inc. Plasma deposition of carbon hardmask
JP6518024B1 (ja) * 2017-10-30 2019-05-22 日本碍子株式会社 静電チャック及びその製法
US11469097B2 (en) 2018-04-09 2022-10-11 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
SG11202101496WA (en) * 2018-10-26 2021-05-28 Applied Materials Inc High density carbon films for patterning applications

Similar Documents

Publication Publication Date Title
JP2022505395A5 (https=)
JP7301931B2 (ja) ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
JP2023156333A5 (https=)
US7632549B2 (en) Method of forming a high transparent carbon film
CN101312126B (zh) 形成非晶碳膜的方法和使用该方法制造半导体装置的方法
US20150371851A1 (en) Amorphous carbon deposition process using dual rf bias frequency applications
US12055863B2 (en) Structures and methods for use in photolithography
JP7407121B2 (ja) パターニング用途のためのカーボンハードマスク及び関連方法
US20090093128A1 (en) Methods for high temperature deposition of an amorphous carbon layer
JP7778835B2 (ja) パターニング応用のための高密度炭素膜
JP2021523558A (ja) パターニングのための高品質ｃ膜のパルスプラズマ（ｄｃ／ｒｆ）蒸着
JP7061653B2 (ja) 被処理体を処理する方法
JPH118248A (ja) 反射防止コーティングおよびその形成方法
JP2007096295A (ja) フォトマスクを製造するのに適した炭素ハードマスクを介してクロム層をプラズマエッチングする方法
JP2021520639A5 (https=)
CN101473062A (zh) 改善pecvd不定形碳膜层的膜内缺陷的方法
KR20060127250A (ko) 금속 에칭 하드마스크 분야용 비정질 탄소막 증착 방법
JP7066565B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP2023532883A5 (https=)
JP2018529233A (ja) ブロックコポリマーの選択的エッチング方法
CN101386973A (zh) 使用等离子体cvd形成碳聚合物膜的方法
US20190109010A1 (en) Method of etching substrate
JP7710474B2 (ja) ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
JP7542088B2 (ja) フォトレジスト気相堆積
JP2023533711A5 (https=)