TW495553B - Method for preparing diamond-like carbon film by cathode arc evaporation (CAE) - Google Patents

Abstract

The present invention relates to a method for preparing diamond-like carbon film by cathode arc evaporation (CAE), which comprises using the high ion energy of a CAE metal ion to excite a hydrocarbon gas in a vacuum chamber for a pyrolysis reaction to deposit a diamond-like carbon film having a high rigidity and a high lubricative property. The diamond-like carbon film according to the present invention contains metal components and has a good toughness. Moreover, prior to the deposition of the diamond-like film, a same metal arc source can be used in a CAE process to deposit one or more layers of metal, metal nitride or metal carbide interlayer to strengthen the adhesion of the diamond-like carbon film, followed by introducing a hydrocarbon gas to generate a pyrolysis reaction with the plasma of the metal arc source to deposit the diamond-like carbon film.

Description

495553 Case No. 88114687 Amendment I. Description of the Invention (1) [Detailed description of the invention] The present invention relates to a method for preparing a carbon film for a cathodic arc evaporation type diamond film, and particularly relates to a method using a cathodic arc Evaporation as the core technology has developed a composite physical vapor deposition process, that is, a process that combines PVD deposition interlayer and plasma-assisted chemical vapor deposition (PECVD deposition of diamond-like carbon films), so it is actually quite practical. Progressive and progressive inventions' are worthy of being promoted by the industry and traveled to the public. [Background of the invention]

Diamond-like carbon film (DIAMOND—LIKE CAR bON (DLC), FI LMS) has been widely used in applications requiring low hardness due to its high hardness, extremely low conductivity, low coefficient of friction, and low chemical affinity. Wear-resistant and corrosion-resistant occasions, such as the semiconductor industry and mechanical wear-resistant components; while the diamond-like carbon film has an amorphous (NON-CRYSTALLINE) structure with both sp2 and sp3 bonded carbon films, and other diamond-like carbon films It can be divided into hydrogen-containing diamond carbon film (a-c: H) and hydrogen-free diamond carbon film (a-c); hydrogen-containing diamond carbon film is generally obtained by cracking hydrocarbon gas, such as Plasma Assisted Chemical Vapor Deposition (p ECVD), Hot Filament Chemical Vapor Deposition (Η OT — FILAMENT CVD) or Laser Deposition (L ASER A BLASION);

And diamond films such as hydrogen do not use magnetron sputtering (M AGNETRON

SPUTTERING), electron beam evaporation (£ LECTRON BE ΑΜΕ VEPOR A TION) or cathodic arc plasma evaporation (CATHODIC ARC E VEPOR

Said work 88114687 V. Invented AT Ioν, Γ uses retro AE), and it is worth mentioning that the cathodic arc evaporation method can achieve the target ionization rate and control the ion kinetic energy to obtain high hardness diamond carbon film. The main disadvantage of Zantan Tengye using the above method to prepare diamond-like carbon film is that this type of 1.0 um, the internal stress and adhesion is not good so that the thickness of the deposition is only 0 · 2 ~ to improve this and it can not be effectively applied to mechanical molds Or components, and in order to wait for the shortcomings of others, please refer to the Annex I, F RANCESCHINI some kind of danger is to add nitrogen to the carbon film of hydrogen-containing diamond to improve the internal stress and obtain the effect of plating. FALABELLA [2] et al. Used cathodic arc to vaporize metal targets to deposit diamond-like carbon films. The method cited in their patents was to use an interposer or add nitrogen to diamond-like carbon films to reduce internal stress. In the same evaporation system, more than two kinds of buttons are used: x ^ ^ ^ ^ ^ ^ PECVD ^ ^ ^ ^, χ t Prepare 3 diamond interlayers and diamond carbon films such as impurities. This low temperature combines PVD and PECVD to prepare DLC. However, due to the ionization energy of the magnetic symmetry (UBM) system of the pelvic symmetry, the film production is between $ 2 and the traditional DLC, and the deposition rate is also lower than the metal emulsion. Therefore, in view of this, The present inventors are actively developing and researching a method for preparing cathode-arc vapor-deposited diamond-like carbon film, and a diamond-like carbon reed method, which makes it more useful in industry to improve the traditional eight-eight teas. [Objective of the invention] The main object of the present invention is to provide a method for preparing an anion carbon film, so that it can improve the adhesion of two diamonds, and can also improve the residual stress of the diamond-like carbon film. The slave's secondary purpose of the present invention is to make its carbon film more like 495553 _ case number 88114687_ year month day _i ± ^ _ 5. Description of the invention (3) has a higher hardness, To facilitate industrial use; therefore, in general, the present invention can be said to be quite effective, and can be called a breakthrough invention, which has considerable industrial use value. [Detailed description of the embodiment of the present invention] The present invention relates to a method for preparing a carbon film for a cathodic arc evaporation type diamond film. The method for preparing a carbon film for the cathodic arc evaporation type diamond film is mainly based on arc evaporation. In the process of depositing diamond-like carbon film, the high-energy plasma provided by the metal ion source with high ionization rate and the incoming hydrocarbon gas (such as ch4 or c2h2) generate cracking and sedimentation reactions to form metal-containing infiltrates. Diamond-like carbon film, and through adjusting the substrate bias, working pressure, reaction gas type and arc source target material, to make metal-containing diamond-like carbon film with different mechanical properties; and the incoming hydrocarbon gas is divided into The pressure can be between 0.5Pa ~ 5.0Pa. At the same time, the diamond carbon film with different microstructures and mechanical properties can be obtained by adjusting the bias of the substrate and the partial pressure of the hydrocarbon gas. Take film hardness as an example. The adjustment can be between HV 1 800 to HV4200. Appropriate substrate bias parameters can form good interlayers, such as Cr, Ti interlayers. Generally, the substrate bias voltage is between -100V ~ -3 0 0V, and the form of substrate bias power can be DC (DC ), Pulsed (Pulsed) or RF power supply; please refer to the reference shown in Annex II, which is an embodiment of the manufacturing process of the diamond-like carbon film using the present invention and its process parameters, so you can use the present invention to obtain Metal-containing diamond carbon film with different mechanical properties. In addition, it is also possible to pass hydrocarbon gas in the cathodic arc evaporation method.

Page 6 495553 ___ Case No. 8811468Ϊ_year g 3 Revised to ___ V. Description of the invention (4) Adding other gases as infiltration agents (Dopant), such as nitrogen (N2), participate in the cracking reaction by adding infiltration agents, It can improve the degree of freedom of the sp3 carbon bond of the diamond-like carbon film. By adding the infiltrant, different ratios of the Raman shift intensity (ID / IG) can be obtained. Diamond film hardness value. Therefore, from the above-mentioned preparation method of the cathode arc evaporation type diamond carbon film, it can be known that the present invention provides a more novel process than the conventional method of preparing the diamond carbon film, and can also make the preparation of the cathode arc evaporation type diamond carbon film. The diamond carbon film made by the method has more industrial utilization value. In order to make your reviewers better understand the effect and value of the present invention, the following points are discussed: 1. The present invention can Applied to the semiconductor, optoelectronic, optical, and mechanical wear-resistant industries. When applied to various mechanical components, molds, and tools, diamond-like carbon films need to have both high hardness and toughness. 2. The diamond carbon film prepared by the present invention can improve the adhesion and increase the hardness. 3. Using the present invention, the adhesion of the diamond-like carbon film can be improved, and metal, metal nitride or metal carbide can be infiltrated into the diamond-like carbon film to improve the residual stress of the diamond-like carbon film. ° In summary, the method for preparing the carbon film of the cathodic arc evaporation type diamond film of the present invention is indeed completely suitable for the development of the human industry in terms of structural design, practicality and cost-effectiveness, and the disclosed structural invention is also It has an unprecedented innovative structure 'It has not been seen in any publications, and there are no similar products on the market, so its "newness" should no doubt be considered;

495553 Case No. 88114687 Amendment V. Description of Invention (5) and the applicant of this case is a company that actually manufactures "Preparation Method of Cathodic Arc Evaporation Diamond Carbon Film" and has more than ten years of experience in developing such products I have a good understanding of the problems caused by the preparation method of the conventional cathode arc evaporation type diamond film. The present invention does have an equivalent effect. Therefore, this case is indeed in line with the requirements of the relevant invention patents of the Bureau.

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Claims (1)

Ρί Modification 1 · A method for preparing carbon films for cathodic arc evaporation type diamond films, which is mainly used in the process of depositing carbon films for diamond type by cathodic arc evaporation method, using high-energy electricity provided by metal arc sources with high ionization rate The polymerization and the incoming hydrocarbon gas generate cracking and sedimentation reactions to form diamond carbons such as metal-containing infiltrates, and by adjusting the substrate bias voltage between 1Ό〇ν ~ -30〇ov, the hydrocarbon gas partial pressure is between 0 · 5PA ~ 5 · 〇pA, the type of reaction gas and the type of arc source target, so that it is made of metal-containing diamond carbon film with different mechanical properties. 2. According to the method for preparing the film breaking film in the scope of the patent application, the adhesion of the metal, metal nitride or metal carbon on the steam bond is light. In the cathodic arc evaporation sequence described in item 1, the metal arc source can first deposit the interlayer of the compound to improve the diamond-like carbon film. 3. The method for preparing a diamond film according to the scope of the patent application, wherein the nitride or metal is carbonized. The toughness of the metal film carbon film. The metal medium added in cathodic arc evaporation as described in item 2 is capable of forming metals such as chromium, titanium, or copper, etc., which can be improved. Please refer to cathodic arc evaporation as described in item 1 of the patent scope. Second, the solitary 7? $ Method, in which the arc source part 玎 uses a random arc source, a controlled arc source, or a filtered arc source. Carbon film m !: Cathodic arc evaporation type diamonds described in the item [SIB # can be added with bismuth to generate cracking and sedimentation reactions when carbon gas is passed in. "Mass atoms, such as nitrogen atoms, ie Improve the toughness of diamond-like carbon film 6 Cathodic arc evaporation type according to item 1 of the scope of patent application Case No. 495553 Case No. 88114687 Amendment VI. Scope of Patent Application The method of preparing carbon film for drilling, in which the substrate bias form can be DC, pulse or RF power supply. Page 11