JP2023532883A5 - - Google Patents

Info

Publication number
JP2023532883A5
JP2023532883A5 JP2022580390A JP2022580390A JP2023532883A5 JP 2023532883 A5 JP2023532883 A5 JP 2023532883A5 JP 2022580390 A JP2022580390 A JP 2022580390A JP 2022580390 A JP2022580390 A JP 2022580390A JP 2023532883 A5 JP2023532883 A5 JP 2023532883A5
Authority
JP
Japan
Application number
JP2022580390A
Other languages
Japanese (ja)
Other versions
JPWO2022005703A5 (https=
JP2023532883A (ja
JP7710474B2 (ja
Filing date
Publication date
Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
Application filed filed Critical
Priority claimed from PCT/US2021/036188 external-priority patent/WO2022005703A1/en
Publication of JP2023532883A publication Critical patent/JP2023532883A/ja
Publication of JPWO2022005703A5 publication Critical patent/JPWO2022005703A5/ja
Publication of JP2023532883A5 publication Critical patent/JP2023532883A5/ja
Application granted granted Critical
Publication of JP7710474B2 publication Critical patent/JP7710474B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022580390A 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法 Active JP7710474B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/915,110 2020-06-29
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US17/035,192 2020-09-28
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
PCT/US2021/036188 WO2022005703A1 (en) 2020-06-29 2021-06-07 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications

Publications (4)

Publication Number Publication Date
JP2023532883A JP2023532883A (ja) 2023-08-01
JPWO2022005703A5 JPWO2022005703A5 (https=) 2025-04-15
JP2023532883A5 true JP2023532883A5 (https=) 2025-04-15
JP7710474B2 JP7710474B2 (ja) 2025-07-18

Family

ID=79317112

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022580390A Active JP7710474B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
JP2023500017A Active JP7704828B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法
JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023500017A Active JP7704828B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法
JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

Country Status (4)

Country Link
JP (3) JP7710474B2 (https=)
KR (3) KR102921389B1 (https=)
CN (3) CN116075920A (https=)
WO (3) WO2022005700A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620252B2 (ja) * 1987-09-17 1997-06-11 住友電気工業株式会社 窒素含有硬質炭素膜の製造方法
JP2679808B2 (ja) * 1988-05-27 1997-11-19 キヤノン株式会社 ダイヤモンド状炭素膜の製造方法
JP3281354B2 (ja) 1988-10-11 2002-05-13 株式会社半導体エネルギー研究所 ダイヤモンド状炭素膜の作製方法
US6884733B1 (en) * 2002-08-08 2005-04-26 Advanced Micro Devices, Inc. Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
US6939794B2 (en) * 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
KR100704470B1 (ko) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
US7541069B2 (en) * 2005-03-07 2009-06-02 Sub-One Technology, Inc. Method and system for coating internal surfaces using reverse-flow cycling
US20090029067A1 (en) * 2007-06-28 2009-01-29 Sciamanna Steven F Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
JP2009206394A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd 炭素系ハードマスクの形成方法
JP5739325B2 (ja) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー. マイクロリソグラフィー用の感光性ハードマスク
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US20120258261A1 (en) * 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
US20140335700A1 (en) * 2013-05-10 2014-11-13 Infineon Technologies Ag Carbon Layers for High Temperature Processes
US9320387B2 (en) * 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
KR102311036B1 (ko) * 2014-01-08 2021-10-07 어플라이드 머티어리얼스, 인코포레이티드 비정질 탄소 막들 내로의 이온 주입에 의한 고 에칭 선택성 하드마스크 재료의 개발
KR102287813B1 (ko) 2014-05-30 2021-08-10 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
TWI656575B (zh) 2014-09-03 2019-04-11 美商應用材料股份有限公司 用於三維nand硬遮罩應用的奈米結晶鑽石碳膜
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
KR102384226B1 (ko) * 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
US9865459B2 (en) * 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
KR101837370B1 (ko) * 2016-02-04 2018-03-12 주식회사 테스 플라즈마를 이용한 비정질 탄소막의 증착 방법
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
CN206580883U (zh) * 2017-01-13 2017-10-24 凯里学院 一种类金刚石镀膜制备设备
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US20180274100A1 (en) * 2017-03-24 2018-09-27 Applied Materials, Inc. Alternating between deposition and treatment of diamond-like carbon
JP7235683B2 (ja) * 2017-06-08 2023-03-08 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication
CN108441825B (zh) * 2018-02-26 2020-12-29 温州职业技术学院 掺杂金属类金刚石涂层制备方法及其制品
US11842897B2 (en) 2018-10-26 2023-12-12 Applied Materials, Inc. High density carbon films for patterning applications
US11049728B2 (en) * 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US11270890B2 (en) * 2018-12-14 2022-03-08 Lam Research Corporation Etching carbon layer using doped carbon as a hard mask

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
JP2023532883A5 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)