JPWO2022005703A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2022005703A5
JPWO2022005703A5 JP2022580390A JP2022580390A JPWO2022005703A5 JP WO2022005703 A5 JPWO2022005703 A5 JP WO2022005703A5 JP 2022580390 A JP2022580390 A JP 2022580390A JP 2022580390 A JP2022580390 A JP 2022580390A JP WO2022005703 A5 JPWO2022005703 A5 JP WO2022005703A5
Authority
JP
Japan
Prior art keywords
nitrogen
mpa
atomic
doped diamond
carbon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022580390A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023532883A (ja
JP2023532883A5 (https=
JP7710474B2 (ja
Publication date
Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
Application filed filed Critical
Priority claimed from PCT/US2021/036188 external-priority patent/WO2022005703A1/en
Publication of JP2023532883A publication Critical patent/JP2023532883A/ja
Publication of JPWO2022005703A5 publication Critical patent/JPWO2022005703A5/ja
Publication of JP2023532883A5 publication Critical patent/JP2023532883A5/ja
Application granted granted Critical
Publication of JP7710474B2 publication Critical patent/JP7710474B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022580390A 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法 Active JP7710474B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/915,110 2020-06-29
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US17/035,192 2020-09-28
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
PCT/US2021/036188 WO2022005703A1 (en) 2020-06-29 2021-06-07 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications

Publications (4)

Publication Number Publication Date
JP2023532883A JP2023532883A (ja) 2023-08-01
JPWO2022005703A5 true JPWO2022005703A5 (https=) 2025-04-15
JP2023532883A5 JP2023532883A5 (https=) 2025-04-15
JP7710474B2 JP7710474B2 (ja) 2025-07-18

Family

ID=79317112

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022580390A Active JP7710474B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
JP2023500017A Active JP7704828B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法
JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023500017A Active JP7704828B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法
JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

Country Status (4)

Country Link
JP (3) JP7710474B2 (https=)
KR (3) KR102921389B1 (https=)
CN (3) CN116075920A (https=)
WO (3) WO2022005700A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620252B2 (ja) * 1987-09-17 1997-06-11 住友電気工業株式会社 窒素含有硬質炭素膜の製造方法
JP2679808B2 (ja) * 1988-05-27 1997-11-19 キヤノン株式会社 ダイヤモンド状炭素膜の製造方法
JP3281354B2 (ja) 1988-10-11 2002-05-13 株式会社半導体エネルギー研究所 ダイヤモンド状炭素膜の作製方法
US6884733B1 (en) * 2002-08-08 2005-04-26 Advanced Micro Devices, Inc. Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
US6939794B2 (en) * 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
KR100704470B1 (ko) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
US7541069B2 (en) * 2005-03-07 2009-06-02 Sub-One Technology, Inc. Method and system for coating internal surfaces using reverse-flow cycling
US20090029067A1 (en) * 2007-06-28 2009-01-29 Sciamanna Steven F Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
JP2009206394A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd 炭素系ハードマスクの形成方法
JP5739325B2 (ja) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー． マイクロリソグラフィー用の感光性ハードマスク
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US20120258261A1 (en) * 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
US20140335700A1 (en) * 2013-05-10 2014-11-13 Infineon Technologies Ag Carbon Layers for High Temperature Processes
US9320387B2 (en) * 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
KR102311036B1 (ko) * 2014-01-08 2021-10-07 어플라이드 머티어리얼스, 인코포레이티드 비정질 탄소 막들 내로의 이온 주입에 의한 고 에칭 선택성 하드마스크 재료의 개발
KR102287813B1 (ko) 2014-05-30 2021-08-10 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
TWI656575B (zh) 2014-09-03 2019-04-11 美商應用材料股份有限公司 用於三維nand硬遮罩應用的奈米結晶鑽石碳膜
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
KR102384226B1 (ko) * 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
US9865459B2 (en) * 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
KR101837370B1 (ko) * 2016-02-04 2018-03-12 주식회사 테스 플라즈마를 이용한 비정질 탄소막의 증착 방법
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
CN206580883U (zh) * 2017-01-13 2017-10-24 凯里学院 一种类金刚石镀膜制备设备
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US20180274100A1 (en) * 2017-03-24 2018-09-27 Applied Materials, Inc. Alternating between deposition and treatment of diamond-like carbon
JP7235683B2 (ja) * 2017-06-08 2023-03-08 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication
CN108441825B (zh) * 2018-02-26 2020-12-29 温州职业技术学院 掺杂金属类金刚石涂层制备方法及其制品
US11842897B2 (en) 2018-10-26 2023-12-12 Applied Materials, Inc. High density carbon films for patterning applications
US11049728B2 (en) * 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US11270890B2 (en) * 2018-12-14 2022-03-08 Lam Research Corporation Etching carbon layer using doped carbon as a hard mask

Similar Documents

Publication Publication Date Title
JP7301931B2 (ja) ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
US12211694B2 (en) Ultra-high modulus and etch selectivity boron-carbon hardmask films
TWI910398B (zh) 形成非晶碳膜的方法
US10954129B2 (en) Diamond-like carbon as mandrel
CN101312126B (zh) 形成非晶碳膜的方法和使用该方法制造半导体装置的方法
US7632549B2 (en) Method of forming a high transparent carbon film
US20100104770A1 (en) Two-step formation of hydrocarbon-based polymer film
TWI549199B (zh) 複合之可移除硬光罩及其形成方法
TW201736947A (zh) 用於橫向硬光罩凹槽減小的混合碳硬光罩
KR20130118880A (ko) 초고도 선택도 도핑된 비정질 탄소 박리가능 하드마스크 현상 및 통합
US20210407801A1 (en) Methods for producing high-density doped-carbon films for hardmask and other patterning applications
JP7710474B2 (ja) ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
JPWO2022005703A5 (https=)
CN110965022B (zh) 半导体结构的形成方法
CN121890324A (zh) 类金刚石碳缝隙填充
TWI917398B (zh) 用於產生用於硬遮罩及其他圖案化應用的高密度、摻雜氮碳膜的方法
JPWO2022005700A5 (https=)
TWI917397B (zh) 用於產生用於硬遮罩及其他圖案化應用的高密度摻雜碳膜的方法
Gamo et al. Ultrafine patterning of nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition
US20250336674A1 (en) In situ deposition of filmstacks for euv patterning
TW202609871A (zh) 用於euv圖案化的膜堆疊的原位沉積
KR20260049576A (ko) 중성 응력 다이아몬드-유사 탄소
US20250046610A1 (en) Doped diamond-like carbon
JPWO2022046448A5 (https=)
Sun et al. Nucleation of diamond films by ECR-enhanced microwave plasma chemical vapor deposition