JP7710474B2 - ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法 - Google Patents

ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法

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Publication number
JP7710474B2
JP7710474B2 JP2022580390A JP2022580390A JP7710474B2 JP 7710474 B2 JP7710474 B2 JP 7710474B2 JP 2022580390 A JP2022580390 A JP 2022580390A JP 2022580390 A JP2022580390 A JP 2022580390A JP 7710474 B2 JP7710474 B2 JP 7710474B2
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Prior art keywords
nitrogen
substrate
doped diamond
carbon film
mpa
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JP2022580390A
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English (en)
Japanese (ja)
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JPWO2022005703A5 (https=
JP2023532883A (ja
JP2023532883A5 (https=
Inventor
ジウ－ユアン シュー，
プラミット マンナ，
カーティック ジャナキラマン，
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2023532883A publication Critical patent/JP2023532883A/ja
Publication of JPWO2022005703A5 publication Critical patent/JPWO2022005703A5/ja
Publication of JP2023532883A5 publication Critical patent/JP2023532883A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Weting (AREA)
JP2022580390A 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法 Active JP7710474B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/915,110 2020-06-29
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US17/035,192 2020-09-28
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
PCT/US2021/036188 WO2022005703A1 (en) 2020-06-29 2021-06-07 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications

Publications (4)

Publication Number Publication Date
JP2023532883A JP2023532883A (ja) 2023-08-01
JPWO2022005703A5 JPWO2022005703A5 (https=) 2025-04-15
JP2023532883A5 JP2023532883A5 (https=) 2025-04-15
JP7710474B2 true JP7710474B2 (ja) 2025-07-18

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JP2022580390A Active JP7710474B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
JP2023500017A Active JP7704828B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法
JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

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JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

Country Status (4)

Country Link
JP (3) JP7710474B2 (https=)
KR (3) KR102921389B1 (https=)
CN (3) CN116075920A (https=)
WO (3) WO2022005700A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000226666A (ja) 1988-10-11 2000-08-15 Semiconductor Energy Lab Co Ltd ダイヤモンド状炭素膜の作製方法
US20180358222A1 (en) 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications
US20200135466A1 (en) 2018-10-26 2020-04-30 Applied Materials, Inc. High density carbon films for patterning applications

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620252B2 (ja) * 1987-09-17 1997-06-11 住友電気工業株式会社 窒素含有硬質炭素膜の製造方法
JP2679808B2 (ja) * 1988-05-27 1997-11-19 キヤノン株式会社 ダイヤモンド状炭素膜の製造方法
US6884733B1 (en) * 2002-08-08 2005-04-26 Advanced Micro Devices, Inc. Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
US6939794B2 (en) * 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
KR100704470B1 (ko) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
US7541069B2 (en) * 2005-03-07 2009-06-02 Sub-One Technology, Inc. Method and system for coating internal surfaces using reverse-flow cycling
US20090029067A1 (en) * 2007-06-28 2009-01-29 Sciamanna Steven F Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
JP2009206394A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd 炭素系ハードマスクの形成方法
JP5739325B2 (ja) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー． マイクロリソグラフィー用の感光性ハードマスク
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US20120258261A1 (en) * 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
US20140335700A1 (en) * 2013-05-10 2014-11-13 Infineon Technologies Ag Carbon Layers for High Temperature Processes
US9320387B2 (en) * 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
KR102311036B1 (ko) * 2014-01-08 2021-10-07 어플라이드 머티어리얼스, 인코포레이티드 비정질 탄소 막들 내로의 이온 주입에 의한 고 에칭 선택성 하드마스크 재료의 개발
KR102287813B1 (ko) 2014-05-30 2021-08-10 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
TWI656575B (zh) 2014-09-03 2019-04-11 美商應用材料股份有限公司 用於三維nand硬遮罩應用的奈米結晶鑽石碳膜
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
KR102384226B1 (ko) * 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
US9865459B2 (en) * 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
KR101837370B1 (ko) * 2016-02-04 2018-03-12 주식회사 테스 플라즈마를 이용한 비정질 탄소막의 증착 방법
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
CN206580883U (zh) * 2017-01-13 2017-10-24 凯里学院 一种类金刚石镀膜制备设备
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US20180274100A1 (en) * 2017-03-24 2018-09-27 Applied Materials, Inc. Alternating between deposition and treatment of diamond-like carbon
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication
CN108441825B (zh) * 2018-02-26 2020-12-29 温州职业技术学院 掺杂金属类金刚石涂层制备方法及其制品
US11049728B2 (en) * 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US11270890B2 (en) * 2018-12-14 2022-03-08 Lam Research Corporation Etching carbon layer using doped carbon as a hard mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000226666A (ja) 1988-10-11 2000-08-15 Semiconductor Energy Lab Co Ltd ダイヤモンド状炭素膜の作製方法
US20180358222A1 (en) 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications
US20200135466A1 (en) 2018-10-26 2020-04-30 Applied Materials, Inc. High density carbon films for patterning applications

Also Published As

Publication number Publication date
JP7704828B2 (ja) 2025-07-08
KR20230027297A (ko) 2023-02-27
CN116075920A (zh) 2023-05-05
CN115917707A (zh) 2023-04-04
WO2022005703A1 (en) 2022-01-06
JP2023533711A (ja) 2023-08-04
CN115885366A (zh) 2023-03-31
TW202200826A (zh) 2022-01-01
JP2023532883A (ja) 2023-08-01
TW202200836A (zh) 2022-01-01
WO2022005704A1 (en) 2022-01-06
TW202200825A (zh) 2022-01-01
WO2022005700A1 (en) 2022-01-06
JP7678830B2 (ja) 2025-05-16
KR102921389B1 (ko) 2026-01-30
KR20230029911A (ko) 2023-03-03
KR20230029912A (ko) 2023-03-03
JP2023532335A (ja) 2023-07-27

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