CN116075920A - 用于产生用于硬掩模和其他图案化应用的高密度、氮掺杂碳膜的方法 - Google Patents

用于产生用于硬掩模和其他图案化应用的高密度、氮掺杂碳膜的方法 Download PDF

Info

Publication number
CN116075920A
CN116075920A CN202180042770.0A CN202180042770A CN116075920A CN 116075920 A CN116075920 A CN 116075920A CN 202180042770 A CN202180042770 A CN 202180042770A CN 116075920 A CN116075920 A CN 116075920A
Authority
CN
China
Prior art keywords
nitrogen
substrate
doped diamond
carbon film
mpa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180042770.0A
Other languages
English (en)
Chinese (zh)
Inventor
许瑞元
P·曼纳
K·嘉纳基拉曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN116075920A publication Critical patent/CN116075920A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Weting (AREA)
CN202180042770.0A 2020-06-29 2021-06-07 用于产生用于硬掩模和其他图案化应用的高密度、氮掺杂碳膜的方法 Pending CN116075920A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/915,110 2020-06-29
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US17/035,192 2020-09-28
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications
PCT/US2021/036188 WO2022005703A1 (en) 2020-06-29 2021-06-07 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications

Publications (1)

Publication Number Publication Date
CN116075920A true CN116075920A (zh) 2023-05-05

Family

ID=79317112

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202180043452.6A Pending CN115885366A (zh) 2020-06-29 2021-06-07 用于产生用于硬掩模及其他图案化应用的高密度碳膜的方法
CN202180042770.0A Pending CN116075920A (zh) 2020-06-29 2021-06-07 用于产生用于硬掩模和其他图案化应用的高密度、氮掺杂碳膜的方法
CN202180043981.6A Pending CN115917707A (zh) 2020-06-29 2021-06-07 用于生产用于硬模和其他图案化应用的高密度掺杂碳膜的方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202180043452.6A Pending CN115885366A (zh) 2020-06-29 2021-06-07 用于产生用于硬掩模及其他图案化应用的高密度碳膜的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202180043981.6A Pending CN115917707A (zh) 2020-06-29 2021-06-07 用于生产用于硬模和其他图案化应用的高密度掺杂碳膜的方法

Country Status (4)

Country Link
JP (3) JP7678830B2 (https=)
KR (3) KR20230029911A (https=)
CN (3) CN115885366A (https=)
WO (3) WO2022005700A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102016113A (zh) * 2007-06-28 2011-04-13 分之一技术公司 使用类金刚石母体在外表面生成非晶碳镀层的方法
US20180358222A1 (en) * 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620252B2 (ja) * 1987-09-17 1997-06-11 住友電気工業株式会社 窒素含有硬質炭素膜の製造方法
JP2679808B2 (ja) * 1988-05-27 1997-11-19 キヤノン株式会社 ダイヤモンド状炭素膜の製造方法
JP3281354B2 (ja) 1988-10-11 2002-05-13 株式会社半導体エネルギー研究所 ダイヤモンド状炭素膜の作製方法
US6884733B1 (en) * 2002-08-08 2005-04-26 Advanced Micro Devices, Inc. Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
US6939794B2 (en) * 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
KR100704470B1 (ko) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
US7541069B2 (en) * 2005-03-07 2009-06-02 Sub-One Technology, Inc. Method and system for coating internal surfaces using reverse-flow cycling
JP2009206394A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd 炭素系ハードマスクの形成方法
JP5739325B2 (ja) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー． マイクロリソグラフィー用の感光性ハードマスク
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US20120258261A1 (en) * 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
US20140335700A1 (en) * 2013-05-10 2014-11-13 Infineon Technologies Ag Carbon Layers for High Temperature Processes
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9320387B2 (en) * 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
WO2015105651A1 (en) * 2014-01-08 2015-07-16 Applied Materials, Inc. Development of high etch selective hardmask material by ion implantation into amorphous carbon films
KR102287813B1 (ko) 2014-05-30 2021-08-10 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
TWI670831B (zh) 2014-09-03 2019-09-01 美商應用材料股份有限公司 用於三維nand硬遮罩應用的奈米結晶鑽石碳膜
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
KR102384226B1 (ko) * 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
US9865459B2 (en) * 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
KR101837370B1 (ko) * 2016-02-04 2018-03-12 주식회사 테스 플라즈마를 이용한 비정질 탄소막의 증착 방법
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
CN206580883U (zh) * 2017-01-13 2017-10-24 凯里学院 一种类金刚石镀膜制备设备
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US10544505B2 (en) 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication
CN108441825B (zh) * 2018-02-26 2020-12-29 温州职业技术学院 掺杂金属类金刚石涂层制备方法及其制品
SG11202101496WA (en) 2018-10-26 2021-05-28 Applied Materials Inc High density carbon films for patterning applications
US11049728B2 (en) * 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US11270890B2 (en) * 2018-12-14 2022-03-08 Lam Research Corporation Etching carbon layer using doped carbon as a hard mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102016113A (zh) * 2007-06-28 2011-04-13 分之一技术公司 使用类金刚石母体在外表面生成非晶碳镀层的方法
US20180358222A1 (en) * 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications
CN110622280A (zh) * 2017-06-08 2019-12-27 应用材料公司 用于硬掩模及其他图案化应用的高密度低温碳膜

Also Published As

Publication number Publication date
CN115917707A (zh) 2023-04-04
WO2022005700A1 (en) 2022-01-06
KR20230029911A (ko) 2023-03-03
WO2022005704A1 (en) 2022-01-06
JP7678830B2 (ja) 2025-05-16
TW202200826A (zh) 2022-01-01
TW202200825A (zh) 2022-01-01
WO2022005703A1 (en) 2022-01-06
JP7710474B2 (ja) 2025-07-18
JP2023532335A (ja) 2023-07-27
JP2023533711A (ja) 2023-08-04
KR20230027297A (ko) 2023-02-27
JP7704828B2 (ja) 2025-07-08
TW202200836A (zh) 2022-01-01
CN115885366A (zh) 2023-03-31
KR20230029912A (ko) 2023-03-03
KR102921389B1 (ko) 2026-01-30
JP2023532883A (ja) 2023-08-01

Similar Documents

Publication Publication Date Title
US12211694B2 (en) Ultra-high modulus and etch selectivity boron-carbon hardmask films
JP7534492B2 (ja) ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
US11664226B2 (en) Methods for producing high-density carbon films for hardmasks and other patterning applications
CN116075920A (zh) 用于产生用于硬掩模和其他图案化应用的高密度、氮掺杂碳膜的方法
US11664214B2 (en) Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
TWI917399B (zh) 用於產生用於硬遮罩及其他圖案化應用的高密度碳膜的方法
KR102958208B1 (ko) 초고 탄성률 및 에칭 선택비의 붕소-탄소 하드마스크 막들

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination