KR20230029911A - 하드마스크 및 다른 패터닝 애플리케이션들을 위한 고밀도 도핑된 탄소 막들을 생성하기 위한 방법들 - Google Patents

하드마스크 및 다른 패터닝 애플리케이션들을 위한 고밀도 도핑된 탄소 막들을 생성하기 위한 방법들 Download PDF

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KR20230029911A
KR20230029911A KR1020237003023A KR20237003023A KR20230029911A KR 20230029911 A KR20230029911 A KR 20230029911A KR 1020237003023 A KR1020237003023 A KR 1020237003023A KR 20237003023 A KR20237003023 A KR 20237003023A KR 20230029911 A KR20230029911 A KR 20230029911A
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substrate
atomic
carbon film
doped
electrostatic chuck
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KR1020237003023A
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English (en)
Korean (ko)
Inventor
에스와르아난드 벤카타수브라마니안
프라밋 만나
아비짓 바수 말릭
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어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20230029911A publication Critical patent/KR20230029911A/ko
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    • H01L21/02274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H01L21/02115—
    • H01L21/0332—
    • H01L21/31144—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Weting (AREA)
KR1020237003023A 2020-06-29 2021-06-07 하드마스크 및 다른 패터닝 애플리케이션들을 위한 고밀도 도핑된 탄소 막들을 생성하기 위한 방법들 Ceased KR20230029911A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/915,110 2020-06-29
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US17/035,192 2020-09-28
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications
PCT/US2021/036114 WO2022005700A1 (en) 2020-06-29 2021-06-07 Methods for producing high-density doped-carbon films for hardmask and other patterning applications

Publications (1)

Publication Number Publication Date
KR20230029911A true KR20230029911A (ko) 2023-03-03

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KR1020237003023A Ceased KR20230029911A (ko) 2020-06-29 2021-06-07 하드마스크 및 다른 패터닝 애플리케이션들을 위한 고밀도 도핑된 탄소 막들을 생성하기 위한 방법들
KR1020237003026A Active KR102921389B1 (ko) 2020-06-29 2021-06-07 하드마스크들 및 다른 패터닝 애플리케이션들을 위한 고밀도 탄소 막들을 생산하기 위한 방법들
KR1020237003025A Ceased KR20230027297A (ko) 2020-06-29 2021-06-07 하드마스크들 및 다른 패터닝 애플리케이션들을 위한 고밀도 질소-도핑된 탄소 막들을 생산하기 위한 방법들

Family Applications After (2)

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KR1020237003026A Active KR102921389B1 (ko) 2020-06-29 2021-06-07 하드마스크들 및 다른 패터닝 애플리케이션들을 위한 고밀도 탄소 막들을 생산하기 위한 방법들
KR1020237003025A Ceased KR20230027297A (ko) 2020-06-29 2021-06-07 하드마스크들 및 다른 패터닝 애플리케이션들을 위한 고밀도 질소-도핑된 탄소 막들을 생산하기 위한 방법들

Country Status (4)

Country Link
JP (3) JP7678830B2 (https=)
KR (3) KR20230029911A (https=)
CN (3) CN115885366A (https=)
WO (3) WO2022005700A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620252B2 (ja) * 1987-09-17 1997-06-11 住友電気工業株式会社 窒素含有硬質炭素膜の製造方法
JP2679808B2 (ja) * 1988-05-27 1997-11-19 キヤノン株式会社 ダイヤモンド状炭素膜の製造方法
JP3281354B2 (ja) 1988-10-11 2002-05-13 株式会社半導体エネルギー研究所 ダイヤモンド状炭素膜の作製方法
US6884733B1 (en) * 2002-08-08 2005-04-26 Advanced Micro Devices, Inc. Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
US6939794B2 (en) * 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
KR100704470B1 (ko) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
US7541069B2 (en) * 2005-03-07 2009-06-02 Sub-One Technology, Inc. Method and system for coating internal surfaces using reverse-flow cycling
US20090029067A1 (en) * 2007-06-28 2009-01-29 Sciamanna Steven F Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
JP2009206394A (ja) * 2008-02-29 2009-09-10 Nippon Zeon Co Ltd 炭素系ハードマスクの形成方法
JP5739325B2 (ja) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー． マイクロリソグラフィー用の感光性ハードマスク
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
US20120258261A1 (en) * 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
US20140335700A1 (en) * 2013-05-10 2014-11-13 Infineon Technologies Ag Carbon Layers for High Temperature Processes
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9320387B2 (en) * 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
WO2015105651A1 (en) * 2014-01-08 2015-07-16 Applied Materials, Inc. Development of high etch selective hardmask material by ion implantation into amorphous carbon films
KR102287813B1 (ko) 2014-05-30 2021-08-10 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
TWI670831B (zh) 2014-09-03 2019-09-01 美商應用材料股份有限公司 用於三維nand硬遮罩應用的奈米結晶鑽石碳膜
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
KR102384226B1 (ko) * 2015-03-24 2022-04-07 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴 형성방법
US9865459B2 (en) * 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
KR101837370B1 (ko) * 2016-02-04 2018-03-12 주식회사 테스 플라즈마를 이용한 비정질 탄소막의 증착 방법
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
CN206580883U (zh) * 2017-01-13 2017-10-24 凯里学院 一种类金刚石镀膜制备设备
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US10544505B2 (en) 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor
WO2018226370A1 (en) * 2017-06-08 2018-12-13 Applied Materials, Inc. High-density low temperature carbon films for hardmask and other patterning applications
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication
CN108441825B (zh) * 2018-02-26 2020-12-29 温州职业技术学院 掺杂金属类金刚石涂层制备方法及其制品
SG11202101496WA (en) 2018-10-26 2021-05-28 Applied Materials Inc High density carbon films for patterning applications
US11049728B2 (en) * 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US11270890B2 (en) * 2018-12-14 2022-03-08 Lam Research Corporation Etching carbon layer using doped carbon as a hard mask

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Publication number Publication date
CN115917707A (zh) 2023-04-04
WO2022005700A1 (en) 2022-01-06
WO2022005704A1 (en) 2022-01-06
JP7678830B2 (ja) 2025-05-16
TW202200826A (zh) 2022-01-01
CN116075920A (zh) 2023-05-05
TW202200825A (zh) 2022-01-01
WO2022005703A1 (en) 2022-01-06
JP7710474B2 (ja) 2025-07-18
JP2023532335A (ja) 2023-07-27
JP2023533711A (ja) 2023-08-04
KR20230027297A (ko) 2023-02-27
JP7704828B2 (ja) 2025-07-08
TW202200836A (zh) 2022-01-01
CN115885366A (zh) 2023-03-31
KR20230029912A (ko) 2023-03-03
KR102921389B1 (ko) 2026-01-30
JP2023532883A (ja) 2023-08-01

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