JPWO2022005700A5 - - Google Patents

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JPWO2022005700A5
JPWO2022005700A5 JP2023500017A JP2023500017A JPWO2022005700A5 JP WO2022005700 A5 JPWO2022005700 A5 JP WO2022005700A5 JP 2023500017 A JP2023500017 A JP 2023500017A JP 2023500017 A JP2023500017 A JP 2023500017A JP WO2022005700 A5 JPWO2022005700 A5 JP WO2022005700A5
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Japan
Prior art keywords
doped diamond
substrate
carbon film
mpa
bias
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JP2023500017A
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Japanese (ja)
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JP7704828B2 (ja
JP2023533711A (ja
JP2023533711A5 (https=
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Priority claimed from US16/915,110 external-priority patent/US20210407801A1/en
Priority claimed from US17/035,265 external-priority patent/US11664226B2/en
Priority claimed from US17/035,192 external-priority patent/US11664214B2/en
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Priority claimed from PCT/US2021/036114 external-priority patent/WO2022005700A1/en
Publication of JP2023533711A publication Critical patent/JP2023533711A/ja
Publication of JP2023533711A5 publication Critical patent/JP2023533711A5/ja
Publication of JPWO2022005700A5 publication Critical patent/JPWO2022005700A5/ja
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JP2023500017A 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法 Active JP7704828B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/915,110 2020-06-29
US16/915,110 US20210407801A1 (en) 2020-06-29 2020-06-29 Methods for producing high-density doped-carbon films for hardmask and other patterning applications
US17/035,192 2020-09-28
US17/035,265 2020-09-28
US17/035,265 US11664226B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density carbon films for hardmasks and other patterning applications
US17/035,192 US11664214B2 (en) 2020-06-29 2020-09-28 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
PCT/US2021/036114 WO2022005700A1 (en) 2020-06-29 2021-06-07 Methods for producing high-density doped-carbon films for hardmask and other patterning applications

Publications (4)

Publication Number Publication Date
JP2023533711A JP2023533711A (ja) 2023-08-04
JP2023533711A5 JP2023533711A5 (https=) 2025-04-21
JPWO2022005700A5 true JPWO2022005700A5 (https=) 2025-04-21
JP7704828B2 JP7704828B2 (ja) 2025-07-08

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ID=79317112

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JP2022580390A Active JP7710474B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法
JP2023500017A Active JP7704828B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度ドープ炭素膜を製造するための方法
JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

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JP2022580390A Active JP7710474B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度窒素ドープ炭素膜を製造するための方法

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JP2022581496A Active JP7678830B2 (ja) 2020-06-29 2021-06-07 ハードマスク及びその他のパターニング応用のための高密度炭素膜を製造するための方法

Country Status (4)

Country Link
JP (3) JP7710474B2 (https=)
KR (3) KR102921389B1 (https=)
CN (3) CN116075920A (https=)
WO (3) WO2022005700A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
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JP2025019750A (ja) * 2023-07-28 2025-02-07 東京エレクトロン株式会社 基板処理方法
CN119859789B (zh) * 2025-01-17 2025-11-18 东莞市普拉提纳米科技有限公司 一种切割铝合金用刀具的非晶碳膜涂层及制备工艺

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US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
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