JP2021530670A5 - - Google Patents

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Publication number
JP2021530670A5
JP2021530670A5 JP2020564135A JP2020564135A JP2021530670A5 JP 2021530670 A5 JP2021530670 A5 JP 2021530670A5 JP 2020564135 A JP2020564135 A JP 2020564135A JP 2020564135 A JP2020564135 A JP 2020564135A JP 2021530670 A5 JP2021530670 A5 JP 2021530670A5
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sample
array
detector array
light
light source
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JP2021530670A (ja
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Priority claimed from PCT/US2019/032282 external-priority patent/WO2019222260A1/en
Publication of JP2021530670A publication Critical patent/JP2021530670A/ja
Publication of JP2021530670A5 publication Critical patent/JP2021530670A5/ja
Priority to JP2024025066A priority Critical patent/JP7806112B2/ja
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JP2020564135A 2018-05-15 2019-05-14 第二高調波発生(shg)光学的検査システムの設計 Pending JP2021530670A (ja)

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JP2024025066A JP7806112B2 (ja) 2018-05-15 2024-02-22 第二高調波発生(shg)光学的検査システムの設計

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US201862671616P 2018-05-15 2018-05-15
US201862671611P 2018-05-15 2018-05-15
US62/671,616 2018-05-15
US62/671,611 2018-05-15
PCT/US2019/032282 WO2019222260A1 (en) 2018-05-15 2019-05-14 Second harmonic generation (shg) optical inspection system designs

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JP2021530670A JP2021530670A (ja) 2021-11-11
JP2021530670A5 true JP2021530670A5 (enExample) 2022-05-19

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JP2020564135A Pending JP2021530670A (ja) 2018-05-15 2019-05-14 第二高調波発生(shg)光学的検査システムの設計
JP2024025066A Active JP7806112B2 (ja) 2018-05-15 2024-02-22 第二高調波発生(shg)光学的検査システムの設計

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US (1) US11946863B2 (enExample)
EP (1) EP3794335B1 (enExample)
JP (2) JP2021530670A (enExample)
KR (1) KR20210021308A (enExample)
CN (1) CN113167741A (enExample)
WO (1) WO2019222260A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102609862B1 (ko) 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. 웨이퍼 계측 기술들
WO2016077617A1 (en) 2014-11-12 2016-05-19 Femtometrix, Inc. Systems for parsing material properties from within shg signals
EP3344972B1 (en) 2015-09-03 2022-12-14 California Institute of Technology Optical systems and methods of characterizing high-k dielectrics
JP7072805B2 (ja) * 2017-02-28 2022-05-23 国立大学法人東京工業大学 時間分解光電子顕微鏡装置および当該装置によるキャリアダイナミクス画像の取得方法
CN113056814B (zh) 2018-04-27 2025-05-27 菲拓梅里克斯公司 确定半导体器件特性的系统和方法
EP3785022A4 (en) 2018-04-27 2022-02-23 SK Hynix Inc. FIELD DISTORTED NONLINEAR OPTICAL METROLOGY WITH A CORONA DISCHARGE SOURCE
EP3794335B1 (en) 2018-05-15 2025-02-19 Femtometrix, Inc. Second harmonic generation (shg) optical inspection system designs
US11042019B2 (en) * 2018-12-17 2021-06-22 Purdue Research Foundation Systems and methods for imaging a sample
JP2020204579A (ja) * 2019-06-18 2020-12-24 住友電工デバイス・イノベーション株式会社 ウェハの表面検査方法、表面検査装置、および電子部品の製造方法
CN111426700B (zh) * 2020-05-11 2024-05-17 中国科学院上海光学精密机械研究所 吸收性缺陷单光束光热测量装置和测量方法
WO2022191958A1 (en) 2021-03-12 2022-09-15 Battelle Memorial Institute Systems and methods for backside optical carrier injection into microelectronic devices
US12553708B2 (en) * 2021-05-12 2026-02-17 Femtometrix, Inc. Second-harmonic generation for critical dimensional metrology
US12315105B2 (en) 2021-06-08 2025-05-27 Battelle Memorial Institute High resolution imaging of microelectronic devices
JP7791563B2 (ja) * 2021-07-27 2025-12-24 国立大学法人埼玉大学 電界計測方法及び電界センサ
CN114397279B (zh) * 2022-01-19 2023-07-18 天津大学 任意应变状态下二维材料和应变物体的应变状态检测方法
CN114823406B (zh) * 2022-03-31 2023-03-24 上海微崇半导体设备有限公司 一种基于二次谐波测量半导体多层结构的方法和装置
TWI816446B (zh) * 2022-06-21 2023-09-21 米雷迪恩飛秒光源股份有限公司 一種雷射應用處理系統及其方法
TW202419849A (zh) 2022-07-12 2024-05-16 美商芬托邁萃克斯公司 用於非侵入、非干擾、不接地之同步電暈沉積及二次諧波產生之量測的方法及設備
WO2024054802A1 (en) * 2022-09-07 2024-03-14 Femtometrix, Inc. Method and apparatus for separation of the second harmonic generation components, through variation in the input probing laser polarization
WO2024054856A1 (en) * 2022-09-08 2024-03-14 Femtometrix, Inc. Method and apparatus for main detector synchronization of optically based second harmonic generation measurements
JP2024080718A (ja) 2022-12-05 2024-06-17 三星電子株式会社 対象物の表面を検査する装置
US20240221149A1 (en) * 2022-12-30 2024-07-04 Kla Corporation Interface-based defect inspection using second harmonic generation
CN116840257A (zh) * 2023-07-04 2023-10-03 哈尔滨工业大学 一种多偏振分解谐波显微成像装置及方法
CN117491384B (zh) * 2023-12-11 2024-06-14 上海微崇半导体设备有限公司 晶圆检测系统及检测方法
FR3164289A1 (fr) * 2024-07-05 2026-01-09 Universite de Bordeaux Appareil optique d’analyse de surfaces à l’aide de lumières réfléchies par processus optiques linéaire et non linéaire
CN119470352B (zh) * 2024-11-11 2025-12-26 湘潭大学 一种原位交流电压shg系统及其表征本征铁电翻转的方法
CN120445996B (zh) * 2025-07-10 2025-09-30 杭州创锐光测技术有限公司 晶体缺陷检测系统、控制方法、介质和程序产品

Family Cites Families (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH538687A (de) 1971-11-23 1973-06-30 Bbc Brown Boveri & Cie Verfahren und Einrichtung zur Untersuchung der Störstellenkonzentration von Halbleitern
JPS55138438A (en) 1979-04-16 1980-10-29 Olympus Optical Co Automatic exposing device for endoscope
US4286215A (en) 1979-05-18 1981-08-25 Bell Telephone Laboratories, Incorporated Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
US4652757A (en) 1985-08-02 1987-03-24 At&T Technologies, Inc. Method and apparatus for optically determining defects in a semiconductor material
US4812756A (en) 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
DE68925810T2 (de) * 1989-01-13 1996-09-26 Ibm Verfahren und Vorrichtung zur Erzeugung von blaugrüner Lichtstrahlung
JPH0816607B2 (ja) 1990-10-30 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜処理制御方法
JP2682465B2 (ja) 1994-09-26 1997-11-26 株式会社日立製作所 表面計測装置
US5557409A (en) 1994-10-13 1996-09-17 Advanced Micro Devices Inc. Characterization of an external silicon interface using optical second harmonic generation
FR2726369B1 (fr) 1994-11-02 1996-12-20 Alcatel Cable Procede de mesure du declin de potentiel et de la mobilite electronique d'un materiau
US6321601B1 (en) 1996-08-06 2001-11-27 Brown University Research Foundation Optical method for the characterization of laterally-patterned samples in integrated circuits
US5814820A (en) 1996-02-09 1998-09-29 The Board Of Trustees Of The University Of Illinois Pump probe cross correlation fluorescence frequency domain microscope and microscopy
US5844684A (en) 1997-02-28 1998-12-01 Brown University Research Foundation Optical method for determining the mechanical properties of a material
JP4025369B2 (ja) 1996-04-26 2007-12-19 ブラウン ユニバーシティー リサーチ ファウンデーション 材料の機械的特性を判別する光学方法
US5748317A (en) 1997-01-21 1998-05-05 Brown University Research Foundation Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector
JP3411780B2 (ja) * 1997-04-07 2003-06-03 レーザーテック株式会社 レーザ顕微鏡及びこのレーザ顕微鏡を用いたパターン検査装置
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
JPH11304716A (ja) * 1998-04-17 1999-11-05 Advantest Corp 表面検査装置および方法
IL126949A (en) 1998-11-08 2004-03-28 Nova Measuring Instr Ltd Apparatus for integrated monitoring of wafers and for process control in semiconductor manufacturing and a method for use thereof
WO2000055885A1 (en) 1999-03-18 2000-09-21 Vanderbilt University Contactless optical probe for use in semiconductor processing metrology
US7158284B2 (en) 1999-03-18 2007-01-02 Vanderbilt University Apparatus and methods of using second harmonic generation as a non-invasive optical probe for interface properties in layered structures
US6856159B1 (en) 1999-03-18 2005-02-15 Vanderbilt University Contactless optical probe for use in semiconductor processing metrology
US6512385B1 (en) 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
US6147799A (en) 1999-10-08 2000-11-14 Agilent Technologies Inc. Physically compact variable optical delay element having wide adjustment range
US6356377B1 (en) 1999-11-10 2002-03-12 Agere Systems Guardian Corp. Mems variable optical delay lines
US6587258B1 (en) 2000-03-24 2003-07-01 Southwest Sciences Incorporated Electro-optic electric field probe
JP2002091512A (ja) 2000-09-12 2002-03-29 Meidensha Corp シーケンサのプログラミング支援装置
US6900894B2 (en) 2000-11-16 2005-05-31 Process Diagnostics, Inc. Apparatus and method for measuring dose and energy of ion implantation by employing reflective optics
US6791099B2 (en) 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
US6650800B2 (en) 2001-03-19 2003-11-18 General Instrument Corporation Time slot tunable all-optical packet data demultiplexer
US6801698B2 (en) 2001-04-12 2004-10-05 Omniguide Communications High index-contrast fiber waveguides and applications
JP3210654B1 (ja) * 2001-05-02 2001-09-17 レーザーテック株式会社 光学式走査装置及び欠陥検出装置
US20030148391A1 (en) 2002-01-24 2003-08-07 Salafsky Joshua S. Method using a nonlinear optical technique for detection of interactions involving a conformational change
US6795175B2 (en) 2002-05-21 2004-09-21 The Boeing Company System and method for imaging contamination on a surface
US6788405B2 (en) 2002-06-12 2004-09-07 The Boeing Company Nonlinear optical system for sensing the presence of contamination on a semiconductor wafer
US6781686B2 (en) 2002-06-19 2004-08-24 The Boeing Company Femtosecond optical surface imaging
US6882414B2 (en) 2002-06-19 2005-04-19 The Boeing Company Broadband infrared spectral surface spectroscopy
US7304305B2 (en) 2002-06-19 2007-12-04 The Boeing Company Difference-frequency surface spectroscopy
US6819844B2 (en) 2002-06-20 2004-11-16 The Boeing Company Fiber-optic based surface spectroscopy
AU2002321147A1 (en) 2002-06-28 2004-01-19 Pirelli & C. S.P.A. Four-wave-mixing based optical wavelength converter device
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
JP3918054B2 (ja) 2003-01-23 2007-05-23 独立行政法人物質・材料研究機構 物質の光応答を測定する方法およびその装置
KR101159070B1 (ko) 2003-03-11 2012-06-25 삼성전자주식회사 고유전율 산화막 형성방법, 이 방법으로 형성된 유전막이구비된 커패시터 및 그 제조방법
JP2004311580A (ja) 2003-04-03 2004-11-04 Toshiba Corp 半導体評価装置及び半導体評価方法
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
JP2005035235A (ja) 2003-07-18 2005-02-10 Noritsu Koki Co Ltd 画像露光装置
US20050058165A1 (en) 2003-09-12 2005-03-17 Lightwave Electronics Corporation Laser having <100>-oriented crystal gain medium
GB2424069B (en) 2003-11-25 2007-11-14 Univ Leland Stanford Junior Method for determining the optical nonlinearity profile of a material
US7362496B2 (en) 2004-04-20 2008-04-22 The Boeing Company Fiber gain medium and method of coupling pump energy into the same
KR100688521B1 (ko) 2005-01-18 2007-03-02 삼성전자주식회사 고유전율 절연막을 포함하는 반도체 소자 및 그 제조 방법
US7202691B2 (en) 2005-05-31 2007-04-10 Semiconductor Diagnostics, Inc. Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers
US7602009B2 (en) 2005-06-16 2009-10-13 Micron Technology, Inc. Erasable non-volatile memory device using hole trapping in high-K dielectrics
US7580138B2 (en) 2005-07-12 2009-08-25 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7433056B1 (en) 2005-07-15 2008-10-07 Kla-Tencor Technologies Corporation Scatterometry metrology using inelastic scattering
WO2007022538A2 (en) 2005-08-19 2007-02-22 Kla-Tencor Technologies Corporation Test pads for measuring properties of a wafer
WO2007049259A1 (en) 2005-10-24 2007-05-03 Optical Metrology Patents Limited An optical measurement apparatus and method
US7718969B2 (en) 2005-12-27 2010-05-18 Rensselaer Polytechnic Institute Methods and systems for generating amplified terahertz radiation for analyzing remotely-located objects
KR100683384B1 (ko) 2005-12-30 2007-02-15 동부일렉트로닉스 주식회사 반도체 소자의 계면 전하포획 밀도 측정 방법
JP4996856B2 (ja) * 2006-01-23 2012-08-08 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US7595204B2 (en) 2006-03-07 2009-09-29 Sematech, Inc. Methods and systems for determining trapped charge density in films
CN100451608C (zh) * 2006-03-30 2009-01-14 西安电子科技大学 薄膜检测光学传感器
WO2007121598A1 (en) * 2006-04-21 2007-11-01 Eth Zurich Broadband terahertz radiation generation and detection system and method
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US7659979B2 (en) 2006-10-17 2010-02-09 Kla-Tencor Corporation Optical inspection apparatus and method
US7684047B2 (en) 2006-10-27 2010-03-23 Lockheed Martin Corporation Apparatus and method for two wave mixing (TWM) based ultrasonic laser testing
KR101146589B1 (ko) 2006-11-30 2012-05-16 삼성전자주식회사 전하 트랩형 반도체 메모리 소자
JP5109123B2 (ja) 2007-03-08 2012-12-26 国立大学法人東京工業大学 電界分布又はキャリア分布を高次高調波の強度に基づいて検出する検出装置及びその検出方法
US7830527B2 (en) 2007-04-13 2010-11-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multiple frequency optical mixer and demultiplexer and apparatus for remote sensing
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US7982944B2 (en) 2007-05-04 2011-07-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method and apparatus for optical frequency comb generation using a monolithic micro-resonator
JP5276347B2 (ja) 2007-07-03 2013-08-28 国立大学法人 新潟大学 シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子
US9285338B2 (en) 2007-07-19 2016-03-15 University of Pittsburgh—of the Commonwealth System of Higher Education Separation of particles using multiplexed dielectrophoresis
CN102394467B (zh) 2007-07-31 2013-11-06 南京长青激光科技有限责任公司 宽波带光源装置
US8264693B2 (en) 2007-12-06 2012-09-11 The Regents Of The University Of Michigan Method and system for measuring at least one property including a magnetic property of a material using pulsed laser sources
US7781739B1 (en) 2008-03-12 2010-08-24 Physical Optics Corporation Quantum-imaging system and mode of operation and method of fabrication thereof
JP2009222629A (ja) * 2008-03-18 2009-10-01 Nikon Corp 被検物端面検査装置
US8009279B2 (en) 2009-01-12 2011-08-30 Corning Incorporated Characterization of non-linear optical materials using bragg coupling
EP2211343A1 (en) * 2009-01-27 2010-07-28 Thomson Licensing High data density optical recording medium
JP2010190722A (ja) * 2009-02-18 2010-09-02 Hitachi High-Technologies Corp 欠陥検査方法及び欠陥検査装置
EP2557301B1 (en) 2009-04-16 2018-02-14 Ethanol Boosting Systems LLC Dimethyl ether (DME) enhanced gasoline engine
US20100272134A1 (en) 2009-04-22 2010-10-28 Blanding Douglass L Rapid Alignment Methods For Optical Packages
CA2792756A1 (en) 2010-03-31 2011-10-06 Kaneka Corporation Structure, chip for localized surface plasmon resonance sensor, localized surface plasmon resonance sensor, and fabricating methods therefor
CN201837582U (zh) 2010-10-19 2011-05-18 天津天狮生物发展有限公司 一体化光学臭氧产量检测装置
US8573785B2 (en) 2010-11-23 2013-11-05 Corning Incorporated Wavelength-switched optical systems
CN102353882B (zh) 2011-06-09 2014-02-19 北京大学 一种半导体器件的栅介质层陷阱密度和位置的测试方法
US8755044B2 (en) 2011-08-15 2014-06-17 Kla-Tencor Corporation Large particle detection for multi-spot surface scanning inspection systems
US9652729B2 (en) 2011-10-27 2017-05-16 International Business Machines Corporation Metrology management
CN102522386B (zh) 2011-12-02 2014-06-11 北京大学 栅氧化层界面陷阱密度测试结构及测试方法
US20150287842A1 (en) 2011-12-16 2015-10-08 Dow Global Technologies Llc Photovoltaic system including light trapping filtered optical module
US9194908B2 (en) 2012-03-28 2015-11-24 Infinitum Solutions, Inc. Metrology for contactless measurement of electrical resistance change in magnetoresistive samples
WO2014012848A1 (en) 2012-07-17 2014-01-23 École Polytechnique Federale De Lausanne (Epfl) Device and method for measuring and imaging second harmonic generation scattered radiation
US9645045B2 (en) * 2012-10-22 2017-05-09 The Arizona Board Of Regents On Behalf Of The University Of Arizona SHG imaging technique for assessing hybrid EO polymer/silicon photonic integrated circuits
US20160238532A1 (en) 2013-06-21 2016-08-18 Invenio Imaging Inc. Multi-photon systems and methods
EP2840385A1 (en) 2013-08-23 2015-02-25 DCG Systems, Inc. Lock-in thermography method and system for determining material layer parameters of a sample
WO2015187221A2 (en) 2014-03-06 2015-12-10 California Institute Of Technology Systems and methods for implementing electrically tunable metasurfaces
KR102609862B1 (ko) 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. 웨이퍼 계측 기술들
US10371668B2 (en) 2014-07-11 2019-08-06 Vanderbilt University Apparatus and methods for probing a material as a function of depth using depth-dependent second harmonic generation
WO2016077617A1 (en) 2014-11-12 2016-05-19 Femtometrix, Inc. Systems for parsing material properties from within shg signals
US9851589B2 (en) 2015-08-10 2017-12-26 Samsung Electronics Co., Ltd. Meta-structure and tunable optical device including the same
EP3344972B1 (en) 2015-09-03 2022-12-14 California Institute of Technology Optical systems and methods of characterizing high-k dielectrics
JP6604629B2 (ja) 2016-02-15 2019-11-13 株式会社Screenホールディングス 検査装置及び検査方法
US9554738B1 (en) 2016-03-30 2017-01-31 Zyomed Corp. Spectroscopic tomography systems and methods for noninvasive detection and measurement of analytes using collision computing
CN110300883B (zh) 2016-11-29 2022-05-10 光热光谱股份有限公司 用于增强光热成像和光谱的方法和设备
US10274807B2 (en) 2016-12-08 2019-04-30 Northwestern University Optical quantification of interfacial charge states
US10274310B2 (en) 2016-12-22 2019-04-30 The Boeing Company Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy
US10942116B2 (en) 2017-10-09 2021-03-09 Photothermal Spectroscopy Corp. Method and apparatus for enhanced photo-thermal imaging and spectroscopy
US10591526B1 (en) 2018-04-09 2020-03-17 Cadence Design Systems, Inc. Systems and methods to generate a test bench for electrostatic discharge analysis of an integrated circuit design
CN113056814B (zh) 2018-04-27 2025-05-27 菲拓梅里克斯公司 确定半导体器件特性的系统和方法
EP3785022A4 (en) 2018-04-27 2022-02-23 SK Hynix Inc. FIELD DISTORTED NONLINEAR OPTICAL METROLOGY WITH A CORONA DISCHARGE SOURCE
EP3794335B1 (en) 2018-05-15 2025-02-19 Femtometrix, Inc. Second harmonic generation (shg) optical inspection system designs
US10976358B2 (en) 2018-11-07 2021-04-13 The Boeing Company Surface charging systems and method for charging a non-planar surface

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