JP2021523569A5 - - Google Patents

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Publication number
JP2021523569A5
JP2021523569A5 JP2020562644A JP2020562644A JP2021523569A5 JP 2021523569 A5 JP2021523569 A5 JP 2021523569A5 JP 2020562644 A JP2020562644 A JP 2020562644A JP 2020562644 A JP2020562644 A JP 2020562644A JP 2021523569 A5 JP2021523569 A5 JP 2021523569A5
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thickness
pinning
cobalt
contact
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JP2020562644A
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Japanese (ja)
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JP7507693B2 (ja
JPWO2019217014A5 (https=
JP2021523569A (ja
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JP2020562644A 2018-05-08 2019-04-05 磁気トンネル接合構造及びその製造方法 Active JP7507693B2 (ja)

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JP2024097845A JP2024150436A (ja) 2018-05-08 2024-06-18 磁気トンネル接合構造及びその製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862668559P 2018-05-08 2018-05-08
US62/668,559 2018-05-08
US16/351,850 US10944050B2 (en) 2018-05-08 2019-03-13 Magnetic tunnel junction structures and methods of manufacture thereof
US16/351,850 2019-03-13
PCT/US2019/026079 WO2019217014A1 (en) 2018-05-08 2019-04-05 Magnetic tunnel junction structures and methods of manufacture thereof

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JP2021523569A JP2021523569A (ja) 2021-09-02
JPWO2019217014A5 JPWO2019217014A5 (https=) 2022-04-08
JP2021523569A5 true JP2021523569A5 (https=) 2022-04-08
JP7507693B2 JP7507693B2 (ja) 2024-06-28

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JP2024097845A Pending JP2024150436A (ja) 2018-05-08 2024-06-18 磁気トンネル接合構造及びその製造方法

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US (2) US10944050B2 (https=)
JP (2) JP7507693B2 (https=)
KR (2) KR20250090373A (https=)
CN (1) CN112166509B (https=)
TW (2) TWI821274B (https=)
WO (1) WO2019217014A1 (https=)

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US20230039108A1 (en) * 2021-08-03 2023-02-09 Yimin Guo Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the same
US12022743B2 (en) * 2021-08-06 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic tunnel junction (MTJ) element and its fabrication process
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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