JP2023083208A5 - - Google Patents
Info
- Publication number
- JP2023083208A5 JP2023083208A5 JP2022132440A JP2022132440A JP2023083208A5 JP 2023083208 A5 JP2023083208 A5 JP 2023083208A5 JP 2022132440 A JP2022132440 A JP 2022132440A JP 2022132440 A JP2022132440 A JP 2022132440A JP 2023083208 A5 JP2023083208 A5 JP 2023083208A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide
- diffusion barrier
- barrier layer
- magnetic free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163285672P | 2021-12-03 | 2021-12-03 | |
| US63/285672 | 2021-12-03 | ||
| US17/675876 | 2022-02-18 | ||
| US17/675,876 US12114578B2 (en) | 2021-12-03 | 2022-02-18 | Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023083208A JP2023083208A (ja) | 2023-06-15 |
| JP2023083208A5 true JP2023083208A5 (https=) | 2025-08-21 |
Family
ID=82899188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022132440A Pending JP2023083208A (ja) | 2021-12-03 | 2022-08-23 | スピントランスファートルクおよびスピン軌道トルクランダムアクセスメモリのための磁気抵抗メモリ要素 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12114578B2 (https=) |
| EP (1) | EP4192222B1 (https=) |
| JP (1) | JP2023083208A (https=) |
| KR (1) | KR20230084003A (https=) |
| CN (1) | CN116234416A (https=) |
| TW (1) | TW202324800A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240164219A1 (en) * | 2022-11-11 | 2024-05-16 | International Business Machines Corporation | Fast switching mram having an aluminum-manganese-germanium free layer combined with a chromium diffusion barrier |
| US12573438B2 (en) | 2024-01-18 | 2026-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device having rows of MRAM cells configured for concurrent writing and reading |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7190557B2 (en) | 2004-04-14 | 2007-03-13 | Hitachi Global Storage Technologies Netherlands B.V. | Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers |
| US7770282B2 (en) | 2005-09-01 | 2010-08-10 | Hitachi Global Storage Technologies Netherlands B.V. | Method of making a magnetic sensing device having an insulator structure |
| JP5768498B2 (ja) | 2011-05-23 | 2015-08-26 | ソニー株式会社 | 記憶素子、記憶装置 |
| US8878318B2 (en) | 2011-09-24 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a MRAM device with an oxygen absorbing cap layer |
| US9178136B2 (en) | 2012-08-16 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetoresistive random access memory cell and fabricating the same |
| US9147833B2 (en) | 2013-07-05 | 2015-09-29 | Headway Technologies, Inc. | Hybridized oxide capping layer for perpendicular magnetic anisotropy |
| US9425387B1 (en) | 2015-09-08 | 2016-08-23 | Headway Technologies, Inc. | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing |
| US10522744B2 (en) | 2017-10-10 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications |
| DE112019003363B4 (de) | 2018-07-04 | 2024-12-05 | Sony Semiconductor Solutions Corporation | Elemente mit magnetischem tunnelübergang und halbleitervorrichtung |
| US11165012B2 (en) | 2018-10-29 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic device and magnetic random access memory |
| US11009570B2 (en) | 2018-11-16 | 2021-05-18 | Samsung Electronics Co., Ltd. | Hybrid oxide/metal cap layer for boron-free free layer |
| US11264566B2 (en) | 2019-06-21 | 2022-03-01 | Headway Technologies, Inc. | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio |
| US11264560B2 (en) | 2019-06-21 | 2022-03-01 | Headway Technologies, Inc. | Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications |
| US20210159393A1 (en) | 2019-11-26 | 2021-05-27 | Globalfoundries Singapore Pte. Ltd. | Magnetic tunnel junction devices and methods of forming thereof |
-
2022
- 2022-02-18 US US17/675,876 patent/US12114578B2/en active Active
- 2022-07-11 KR KR1020220085310A patent/KR20230084003A/ko active Pending
- 2022-08-11 EP EP22189928.9A patent/EP4192222B1/en active Active
- 2022-08-23 JP JP2022132440A patent/JP2023083208A/ja active Pending
- 2022-09-08 TW TW111134159A patent/TW202324800A/zh unknown
- 2022-12-01 CN CN202211531856.2A patent/CN116234416A/zh active Pending
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