JP2023083208A - スピントランスファートルクおよびスピン軌道トルクランダムアクセスメモリのための磁気抵抗メモリ要素 - Google Patents

スピントランスファートルクおよびスピン軌道トルクランダムアクセスメモリのための磁気抵抗メモリ要素 Download PDF

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Publication number
JP2023083208A
JP2023083208A JP2022132440A JP2022132440A JP2023083208A JP 2023083208 A JP2023083208 A JP 2023083208A JP 2022132440 A JP2022132440 A JP 2022132440A JP 2022132440 A JP2022132440 A JP 2022132440A JP 2023083208 A JP2023083208 A JP 2023083208A
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JP
Japan
Prior art keywords
layer
oxide
magnetic
diffusion
memory element
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JP2022132440A
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Japanese (ja)
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JP2023083208A5 (https=
Inventor
ドミトロ，アパルコフ
Apalkov Dmytro
ローマン，チェプルスキー
Chepulskyy Roman
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2023083208A publication Critical patent/JP2023083208A/ja
Publication of JP2023083208A5 publication Critical patent/JP2023083208A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2022132440A 2021-12-03 2022-08-23 スピントランスファートルクおよびスピン軌道トルクランダムアクセスメモリのための磁気抵抗メモリ要素 Pending JP2023083208A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163285672P 2021-12-03 2021-12-03
US63/285672 2021-12-03
US17/675876 2022-02-18
US17/675,876 US12114578B2 (en) 2021-12-03 2022-02-18 Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories

Publications (2)

Publication Number Publication Date
JP2023083208A true JP2023083208A (ja) 2023-06-15
JP2023083208A5 JP2023083208A5 (https=) 2025-08-21

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JP2022132440A Pending JP2023083208A (ja) 2021-12-03 2022-08-23 スピントランスファートルクおよびスピン軌道トルクランダムアクセスメモリのための磁気抵抗メモリ要素

Country Status (6)

Country Link
US (1) US12114578B2 (https=)
EP (1) EP4192222B1 (https=)
JP (1) JP2023083208A (https=)
KR (1) KR20230084003A (https=)
CN (1) CN116234416A (https=)
TW (1) TW202324800A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240164219A1 (en) * 2022-11-11 2024-05-16 International Business Machines Corporation Fast switching mram having an aluminum-manganese-germanium free layer combined with a chromium diffusion barrier
US12573438B2 (en) 2024-01-18 2026-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Device having rows of MRAM cells configured for concurrent writing and reading

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190557B2 (en) 2004-04-14 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
US7770282B2 (en) 2005-09-01 2010-08-10 Hitachi Global Storage Technologies Netherlands B.V. Method of making a magnetic sensing device having an insulator structure
JP5768498B2 (ja) 2011-05-23 2015-08-26 ソニー株式会社 記憶素子、記憶装置
US8878318B2 (en) 2011-09-24 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a MRAM device with an oxygen absorbing cap layer
US9178136B2 (en) 2012-08-16 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory cell and fabricating the same
US9147833B2 (en) 2013-07-05 2015-09-29 Headway Technologies, Inc. Hybridized oxide capping layer for perpendicular magnetic anisotropy
US9425387B1 (en) 2015-09-08 2016-08-23 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US10522744B2 (en) 2017-10-10 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
DE112019003363B4 (de) 2018-07-04 2024-12-05 Sony Semiconductor Solutions Corporation Elemente mit magnetischem tunnelübergang und halbleitervorrichtung
US11165012B2 (en) 2018-10-29 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic device and magnetic random access memory
US11009570B2 (en) 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer
US11264566B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US11264560B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
US20210159393A1 (en) 2019-11-26 2021-05-27 Globalfoundries Singapore Pte. Ltd. Magnetic tunnel junction devices and methods of forming thereof

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Publication number Publication date
US12114578B2 (en) 2024-10-08
EP4192222A1 (en) 2023-06-07
KR20230084003A (ko) 2023-06-12
CN116234416A (zh) 2023-06-06
TW202324800A (zh) 2023-06-16
EP4192222B1 (en) 2025-05-14
US20230180627A1 (en) 2023-06-08

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